Efficiency droop suppression in GaN-based light-emitting diodes by chirped multiple quantum well structure at high current injection*
Zhao Yu-Kuna),b), Li Yu-Fenga),b), Huang Ya-Pinga),b), Wang Honga),b), Su Xi-Linc), Ding Wena),b), Yun Fenga),b),c)†
       
(a) Electron and (b) hole concentrations distributed within the active region of LEDs with uniform and chirped MQW structures at 600 mA/mm2.