An analytical model of thermal mechanical stress induced by through silicon via*
Dong Gang†, Shi Tao, Zhao Ying-Bo, Yang Yin-Tang
       
Comparison between the FEA simulation and the linear superposition method with three TSVs rectangular arrangement. (a) Stress along the straight line between the bottom two TSVs; (b) stress along the perpendicular bisector of the straight line between the bottom two TSVs.