Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor<xref ref-type="fn" rid="cpb142178fn1">*</xref>

Transient simulation and analysis of current collapse due to trapping effects in AlGaN/GaN high-electron-mobility transistor*

Zhou Xing-Ye†, Feng Zhi-Hong‡, Wang Yuan-Gang, Gu Guo-Dong, Song Xu-Bo, Cai Shu-Jun

Pulsed I – V curves of GaN-based devices: (a) experimental results; (b) simulation results extracted from the transient of Al_0.3Ga_0.7N/GaN HEMT.