Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs
Charmi Morteza†
Novel attributes and design considerations of effective oxide thickness in nano DG MOSFETs |
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Charmi Morteza†
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| (a) Transconductance, g m, (b) drain conductance, g d, and (c) voltage gain, g m/ g d versus gate dielectric permittivity (lower axis) and EOT (upper axis), at V D = V G = 0.6 V. |
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