Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment
Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment |
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Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue†
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| (a) Schottky diode characteristics and (b) DC breakdown characteristics. |
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