Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values<xref ref-type="fn" rid="cpb141635fn1">*</xref>

Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values*

Ma Xiao-Hua^a), Zhang Ya-Man^a), Wang Xin-Hua^b), Yuan Ting-Ting^b), Pang Lei^b), Chen Wei-Wei^a), Liu Xin-Yu^b)†

Dependences of the peak value of lateral electric field at the buffer interface under the gate on drain–source voltage for sample A and sample B.