Theoretical study of the optical gain characteristics of a Ge1− xSn x alloy for a short-wave infrared laser<xref ref-type="fn" rid="cpb141728fn1">*</xref>

Theoretical study of the optical gain characteristics of a Ge_{1− x}Sn_x alloy for a short-wave infrared laser*

Zhang Dong-Liang, Cheng Bu-Wen†, Xue Chun-Lai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guang-Ze, Wang Qi-Ming

(a) Band-gap and band offset of Ge_0.922Sn_0.078 active region and lattice-matched Ge_{1− x − y}Si_xSn_y cladding layer each as a function of Sn percentage ( y ). (b) The designed Si-based double heterojunction laser device.