Theoretical study of the optical gain characteristics of a Ge1− xSn x alloy for a short-wave infrared laser<xref ref-type="fn" rid="cpb141728fn1">*</xref>

Theoretical study of the optical gain characteristics of a Ge_{1− x}Sn_x alloy for a short-wave infrared laser*

Zhang Dong-Liang, Cheng Bu-Wen†, Xue Chun-Lai, Zhang Xu, Cong Hui, Liu Zhi, Zhang Guang-Ze, Wang Qi-Ming

(a) The L and Γ conduction band band-gaps of Ge_{1− x}Sn_x alloy each as a function of Sn percentage at room temperature. (b) The variation of the percentage of electrons in Γ conduction valley of Ge_{1− x}Sn_x with x in a range between 0% and 15% at room temperature.