High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition*
Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao†, Zhang Bao-Lin‡
Fig. 7. Raman spectra from two GaSbGaAs 001 samples for film thickness of 0.7 #cod#x03BC;m, 1.0 #cod#x03BC;m, and a bulk GaSb.