High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal–organic chemical vapor deposition*
Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
Fig. 3. Comparison of scanning electron microscope SEM images of GaSb films fabricated at a low growth pressure of 30 mbar for S9 a1, S5 a2 and at a high growth pressure of 90 mbar for S16 b1, S8 b2, and S4 b3.