Effects of pressure and/or magnetism on superconductivity of δ-MoN single crystal *
Miao Bo-Tonga),b), Wang Shan-Minc), Kong Pan-Panb), Jin Mei-Lingb), Feng Shao-Minb), Zhang Si-Jiab), Hao Ai-Minb),d), Yu Xiao-Huib),, Jin Chang-Qingb),, Zhao Yu-Shengc)
School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
HiPSEC, Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, USA
School of Resources and Materials, Northeastern University at Qinhuangdao, Qinhuangdao 066004, China

Corresponding author. E-mail: yuxh@iphy.ac.cn

Corresponding author. E-mail: jin@iphy.ac.cn

Project supported by the Natural Science Foundation of Hebei Province, China (Grant No. A2014501010), the Youth Foundation of the Chinese Academy of Sciences (Grant No.Y4VX047X61), and the Chinese Academy of Sciences Project (Grant No.XDB07000000).

Abstract

Effects of pressure and/or magnetism on the critical superconducting temperature ( Tc) of δ-MoN single crystal were investigated using a Maglab system. The δ-MoN single crystal was synthesized at extreme conditions of high pressure and high temperature. The carrier density of δ-MoN single crystal as a function of applied pressure was determined using Hall coefficient measurement.

Keyword: 74.62.Fj; 74.25.F–; 74.62.–c; 74.70.Ad; effect of pressure; effect of magnetism; superconductivity; Hall effect
1. Introduction

δ -MoN is known to have interesting physical properties such as high Tc superconductivity, magnetism, low compressibility, and a high melting point. A number of experimental and theoretical works have been performed, which focus on the synthesis of δ -MoN single crystal and its fundamental physical properties, such as crystal structure, superconducting critical temperature, compressibility and phonon spectra.[115]

It is well known that pressure is a very powerful tool for generating or tuning superconductivity by modifying the electronic structure without introducing defects or impurities.[16, 17] The behavior of a superconductor in a uniform static magnetic field has always been a subject of intensive experimental and theoretical investigations.[1820]

Bulk δ -MoN was first synthesized by Matthias and Hulm, [21] who reported that the superconducting critical temperature Tc is 12 K. Since then, several studies on the superconducting property of bulk δ -MoN have been reported. Bezinge et al.[4] performed high-pressure and high-temperature experiments on δ -MoN and reported that the superconducting critical temperature is 15.1 K. Soignard et al.[7] reported that the superconducting critical temperature of δ -MoN is below 12 K. Bull et al.[8] reported that the superconducting critical temperature of δ -MoN is 12.1 K.

Nanocrystalline δ -MoN was first synthesized by Gajbhiye and Ningthoujam, [22] who reported that the superconducting transition temperature of nanocrystalline δ -MoN is 7.5 K. Gomathi et al.[23] reported that nanoparticles of δ -MoN show a superconducting transition at a temperature of about 5 K.

More recently, Zhang et al.[24] reported the deposition of epitaxial δ -MoN thin films by a chemical solution approach under ambient pressure. Their δ -MoN thin film showed excellent superconducting properties with a critical temperature of 13.0 K.

To the best of our knowledge, there has been no report on the effects of pressure and/or magnetism on the superconductivity of δ -MoN single crystal to date. In this work, we focus attention on the effects of pressure and/or magnetism on the superconductivity of δ -MoN single crystal.

2. Experimental

δ -MoN single crystal was grown under high pressure and temperature conditions. The synthesis method is described in published literature.[25, 26]

The resistance of δ -MoN single crystal at high pressure was measured using the standard four-probe method in a diamond anvil cell (DAC), as described in our previous work.[2730] The diamond culet faces was 500 μ m in diameter. A plate of T301 stainless was preindented from a thickness of 250 μ m to 60 μ m, and a center hole of 250 μ m in diameter was drilled. Cubic BN (cBN) fine powder was used to cover the gasket to keep the electrode leads insulated from the gasket. A center hole was also drilled into the cBN layer with a diameter of 100 μ m to serve as a sample chamber. The dimension of the δ -MoN single crystal was 80 μ m× 80 μ m× 5 μ m. The soft hexagonal boron nitride (hBN) fine powder was used as a pressure-transmitting medium that could provide a good quasi-hydrostatic pressure. The electrodes were slim Au wires with a diameter of 18 μ m. Pressure was scaled by ruby fluorescence methods.[31] The DAC was placed inside a Maglab system to perform the experiments. The Hall coefficient was measured using van der Pauw method.[32]

3. Results and discussion

The x-ray pattern of the product is shown in Fig.  1. The result shows that the product is a pure phase, which is hexagonal MoN (δ -MoN) with c=0.5608 nm. The possible space groups of δ -MoN single crystal are P3m1 (164) or P63mmc (194).

Fig. 1. XRD spectra of δ -MoN single crystal at zero pressure.

3.1 Effect of pressure on Tc

Figure 2 shows the temperature dependence of the ab plane resistance of δ -MoN single crystal at several pressures. It can be seen from Fig.  2 that the resistance of δ -MoN single crystal changes suddenly from a normal state of conductivity to superconductivity at low temperature. The superconducting transition is sharp with a transition width (from 90% to 10% resistance of the normal state) of 0.4 K.

Fig. 2. Resistance of δ -MoN single crystal as a function of temperature at high pressure.

Pressure has an unusual influence on the superconducting critical temperature Tc of δ -MoN single crystal, as shown in Fig.  3. From Fig.  3, it can be seen that the Tc of δ -MoN single crystal is 11.7 K at 0.3 GPa. Our result is in good agreement with previous reports.[8, 21] It was found that the Tc of δ -MoN single crystal increases with increasing pressure at pressures below 4.2 GPa. Between 4.2 GPa and 17.3 GPa, the Tc of δ -MoN single crystal decreases slowly with increasing pressure, which indicates that the superconductivity of δ -MoN single crystal is suppressed by reducing the volume. Above 17.3 GPa, Tc of δ -MoN single crystal begins to increase with increasing pressure up to 30.4 GPa, which is the highest pressure in our experiment. Since no structural transition was observed under pressures up to 37.7 GPa, [33] it is suspected that the unusual Tc(p) dependence might be due to a modification of the electronic configuration under applied pressure.[34] A similar anomalous change of Tc with pressure has been observed in rhenium, [35] MgB2, [36] and SrAlSi.[37]

Fig. 3. Effect of pressure on Tc of δ -MoN single crystal.

When the temperature is above Tc, it can be observed that the resistance of δ -MoN single crystal increases monotonously with increasing temperature. This indicates that δ -MoN single crystal shows metallic conducting behavior.

3.2 Effect of magnetism on Tc

To investigate the effect of magnetic field on the Tc of δ -MoN single crystal, we conducted measurements around the transition temperature at a varied level of external magnetic field. Our results are shown in Fig.  4. From Fig.  4, it can be seen that the Tc of δ -MoN single crystal drops with the strength of the applied magnetic field. The transition temperature Tc decreases with increasing magnetic field. This is strong evidence that this transition is superconductive in nature.[30]

Using the Werthamer– Helfand– Hobenberg formula[38]

the upper critical field Hc2 was extrapolated to be 4.4 T at 20 K for H| | c when the δ -MoN single crystal was placed inside the DAC with magnetic field parallel to the c axis.

Fig. 4. The superconducting transition of δ -MoN with applied magnetic field H perpendicular to the ab plane of δ -MoN single crystal.

3.3 Carrier density measurement

To study the effect of pressure on the carrier density n of the δ -MoN single crystal, we performed Hall coefficient measurement at 20 K. The applied magnetic field is perpendicular to the ab plane of δ -MoN single crystal. We found that the carrier density monotonously increases with increasing pressure in a non-linear relationship, as shown in Fig.  5. The calculated result shows that the carrier density of δ -MoN single crystal is 1.48× 1022 cm− 3 at 0 GPa.

Fig. 5. Carrier density of δ -MoN single crystal as a function of pressure at 20 K.

4. Conclusions

δ -MoN single crystal was synthesized at high temperature and high pressure, and its structure was determined using x-ray diffraction. Pressure was found to have an unusual influence on the superconducting transition temperature Tc of δ -MoN single crystal. Magnetism suppresses the transition temperature Tc of δ -MoN single crystal from a normal-state to superconducting state. Hall coefficient measurement shows that the carrier density monotonously increases with increasing pressure in a non-linear relationship. The carrier density of δ -MoN single crystal is about 1.48× 1022 cm− 3 at 0 GPa and 20 K.

Reference
1 Schönberg N 1954 Acta Chem. Scand . 8 204 DOI:10.3891/acta.chem.scand.08-0204 [Cited within:1]
2 Ihara H, Kimura Y, Senzaki K, Kezuka H and Hirabayashi M 1985 Phys. Rev. B 31 3177 DOI:10.1103/PhysRevB.31.3177 [Cited within:1]
3 Papaconstantopoulos D A, Pickett W E, Klein B M and Boyer L L 1985 Phys. Rev. B 31 752 DOI:10.1103/PhysRevB.31.752 [Cited within:1]
4 Bezinge A, Yvon K, Muller J, Lengauer W and Ettmayer P 1987 Solid State Commun. 63 141 DOI:10.1016/0038-1098(87)91183-5 [Cited within:1] [JCR: 1.534]
5 Sanjinés R, Hones P and Lévy F 1998 Thin Solid Films 332 225 DOI:10.1016/S0040-6090(98)00991-2 [Cited within:1] [JCR: 1.604]
6 Zhao X and Range K J 2000 J. Alloy. Compound. 296 72 DOI:10.1016/S0925-8388(99)00496-X [Cited within:1] [JCR: 2.39]
7 Soignard E, McMillan P F, Chaplin T D, Farag S M, Bull C L, Somayazulu M S and Leinenweber K 2003 Phys. Rev. B 68 132101 DOI:10.1103/PhysRevB.68.132101 [Cited within:1]
8 Bull C L, McMillan P F, Soignard E and Leinenweber K J 2004 Solid State Chem. 177 1488 DOI:10.1016/j.jssc.2003.11.033 [Cited within:2] [JCR: 2.04]
9 Sahu B R and Kleinman L 2004 Phys. Rev. B 70 073103 DOI:10.1103/PhysRevB.70.073103 [Cited within:1]
10 Isaev E I, Simak S I, Abrikosov I A, Ahuja R, Vekilov Y K, Katsnelson M I, Lichtenstein A I and Johansson B 2007 J. Appl. Phys. 101 123519 DOI:10.1063/1.2747230 [Cited within:1] [JCR: 0.71]
11 Soignard E, Shebanova O and McMillan P 2007 Phys. Rev. B 75 014104 DOI:10.1103/PhysRevB.75.014104 [Cited within:1]
12 Kanoun M B, Goumri-Said S and Jaouen M 2007 Phys. Rev. B 76 134109 DOI:10.1103/PhysRevB.76.134109 [Cited within:1]
13 Ojha P, Aynyas M and Sanyal S P 2007 J. Phys. Chem. Solids 68 148 DOI:10.1016/j.jpcs.2006.09.022 [Cited within:1] [JCR: 1.527]
14 Zhao E, Wang J and Wu Z 2010 Phys. Status Solidi B 247 1207 DOI:10.1002/pssb.200945575 [Cited within:1] [JCR: 1.489]
15 Yang Z, Kuang X, Wang Z, Zhong M and Huang X 2014 Solid State Sci. 28 20 DOI:10.1016/j.solidstatesciences.2013.12.002 [Cited within:1] [JCR: 1.671]
16 Zhou D, Pu C, Szczeániak D, Zhang G, Lu C, Li G and Song J 2013 Chin. Phys. Lett. 30 027401 DOI:10.1088/0256-307X/30/2/027401 [Cited within:1] [JCR: 0.811] [CJCR: 0.4541]
17 Yan Y, Gong J and Zong Z 2010 Chin. Phys. Lett. 27 017401 DOI:10.1088/0256-307X/27/1/017401 [Cited within:1] [JCR: 0.811] [CJCR: 0.4541]
18 Liu Y, Shen X, Liu Q, Li X, Feng S, Yu R, Uchida S and Jin C 2014 Physica C 497 34 DOI:10.1016/j.physc.2013.09.004 [Cited within:1] [JCR: 0.718]
19 Nayak A P, Bhattacharyya S, Zhu J, Liu J, Wu X, Pand ey T, Jin C, Singh A K, Akinwand e D and Lin J 2014 Nat. Commun. 5 3731 DOI:10.1038/ncomms4731 [Cited within:1] [JCR: 10.015]
20 Wu J, Lin J, Wang X, Liu Q, Zhu J, Xiao Y, Chow P and Jin C 2014 Sci. Rep. 4 3685 DOI:10.1038/srep03685 [Cited within:1] [JCR: 15.333]
21 Matthias B T and Hulm J K 1952 Phys. Rev. 87 799 DOI:10.1103/PhysRev.87.799 [Cited within:2] [JCR: 6.583]
22 Gajbhiye N S and Ningthoujam R S 2004 Phys. Stat. Sol. C 1 3449 DOI:10.1002/(ISSN)1610-1642 [Cited within:1]
23 Gomathi A, Sundaresan A and Rao C N R 2007 J. Solid State Chem. 180 291 DOI:10.1016/j.jssc.2006.10.020 [Cited within:1] [JCR: 2.04]
24 Zhang Y, Haberkorn N, Ronning F, Wang H, Mara N A, Zhou M, Chen L, Lee J H, Blackmore K J, Bauer E, Burrell A K, McCleskey T M, Hawley M E, Schulze R K, Civale L, Tajima T and Jia Q 2011 J. Am. Chem. Soc. 133 20735 DOI:10.1021/ja208868k [Cited within:1] [JCR: 10.677]
25 Wang S, Yu X, Zhang J, Chen M, Zhu J, Wang L, He D, Lin Z, Zhang R, Leinenweber K and Zhao Y 2012 Phys. Rev. B 86 064111 DOI:10.1103/PhysRevB.86.064111 [Cited within:1]
26 Wang S, Yu X, Lin Z, Zhang R, He D, Qin J, Zhu J, Han J, Wang L, Mao H, Zhang J and Zhao Y 2012 Chem. Mater. 24 3023 DOI:10.1021/cm301516w [Cited within:1] [JCR: 8.238]
27 Zhang S, Zhang J, Yu X, Zhu J, Kong P, Feng S, Liu Q, Yang L, Wang X, Cao L, Yang W, Wang L, Mao H, Zhao Y, Liu H, Dai X, Fang Z, Zhang S and Jin C 2012 J. Appl. Phys. 111 112630 DOI:10.1063/1.4726258 [Cited within:1] [JCR: 0.71]
28 Zhu J, Zhang J L, Kong P, Zhang S, Yu X, Zhu J, Liu Q, Li X, Yu R, Ahuja R, Yang W, Shen G, Mao H, Weng H, Dai X, Fang Z, Zhao Y and Jin C 2013 Sci. Rep. 3 2016 DOI:10.1038/srep02016 [Cited within:1] [JCR: 15.333]
29 Kong P, Zhang J, Zhang S, Zhu J, Liu Q, Yu R, Fang Z, Jin C, Yang W, Yu X, Zhu J and Zhao Y 2013 J. Phys. : Condens. Matter 25 362204 DOI:10.1088/0953-8984/25/36/362204 [Cited within:1] [JCR: 2.355]
30 Zhang J, Zhang S, Weng H, Zhang W, Yang L, Liu Q, Feng S, Wang X, Yu R, Cao L, Wang L, Yang W, Liu H, Zhao W, Zhang S, Dai X, Fang Z and Jin C 2011 PNAS 108 24 [Cited within:2] [JCR: 9.737]
31 Mao H, Xu J and Bell P M 1986 J. Geophy. Res. 91 4673 DOI:10.1029/JB091iB05p04673 [Cited within:1] [JCR: 3.174]
32 van der Pauw L J 1958 Philips Res. Rep. 13 1 [Cited within:1]
33 Yang Z, Kuang X, Wang Z, Zhong M and Huang X 2014 Solid State Sci. 28 20 DOI:10.1016/j.solidstatesciences.2013.12.002 [Cited within:1] [JCR: 1.671]
34 Hatton J 1956 Phys. Rev. 103 1167 DOI:10.1103/PhysRev.103.1167 [Cited within:1] [JCR: 6.583]
35 Chu C, Smith T F and Gardner W E 1968 Phys. Rev. Lett. 20 198 DOI:10.1103/PhysRevLett.20.198 [Cited within:1] [JCR: 7.943]
36 Lorenz B, Meng R L and Chu C W 2001 Phys. Rev. B 64 012507 DOI:10.1103/PhysRevB.64.012507 [Cited within:1]
37 Lorenz B, Cmaidalka J, Meng R and Chu C 2003 Phys. Rev. B 68 014512 DOI:10.1103/PhysRevB.68.014512 [Cited within:1]
38 Werthamer N M, Helfand E and Hohenberg P C 1966 Phys. Rev. 147 295 DOI:10.1103/PhysRev.147.295 [Cited within:1] [JCR: 6.583]