Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress<xref ref-type="fn" rid="cpb141364fn1">*</xref>

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress*

Sun Wei-Wei^a),^b), Zheng Xue-Feng^a),^b)†, Fan Shuang^a),^b), Wang Chong^a),^b), Du Ming^a),^b), Zhang Kai^a),^b), Chen Wei-Wei^b), Cao Yan-Rong^b), Mao Wei^a),^b), Ma Xiao-Hua^b), Zhang Jin-Cheng^a),^b), Hao Yue^a),^b)

Fig. 3. Transfer characteristic curves on a fresh E-mode HEMT under a typical on-state gate overdrive stress V g #cod#x003D; 3.0 V, V d #cod#x003D; 1.0 V, I g = 350 mA#cod#x00B7;mm #cod#x2212;1 . The maximum stress time is up to 10#cod#x00A0;ks. In comparison, the TC curves on a D-mode HEMT fabricated on the same wafer under the identical gate injection current I g = 350 mA#cod#x00B7;mm #cod#x2212;1 are also shown in the inset.