Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys*
Zhao Yi, Zhang Jin-Cheng, Xue Jun-Shuai, Zhou Xiao-Wei, Xu Sheng-Rui, Hao Yue
Fig. 1. XRD #cod#x03C9; #cod#x2013;2 #cod#x003B8; scan patterns around the 0002 reflection from both InAlNGaN heterostructure samples grown on UPS and PSS.