Al-doping influence on crystal growth of Ni–Al alloy: Experimental testing of a theoretical model
Rong Xi-Minga), Chen Junb),c), Li Jing-Tianb),c), Zhuang Juna), Ning Xi-Jing†b),c)
       
XRD spectra of Ni–Al films grown with a laser energy density of 5 J/cm2 and post-annealed at 1033 K with Al-doping of 0 (a), 3 wt% (b), 6 wt% (c), and 10 wt% (d) on Si (100) substrate. The inset shows the FWHM of the Ni (111) diffraction peak as a function of Al doping ratio.