Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode

Liu Wei^a),^c), Zhao De-Gang†^a), Jiang De-Sheng^a), Chen Ping^a), Liu Zong-Shun^a), Zhu Jian-Jun^a), Li Xiang^a), Liang Feng^a), Liu Jian-Ping^b), Yang Hui^a),^b)

Calculated conduction band diagram of MQW region for LEDs W7 and W8 at 10 mA forward current.