Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation
Yu Jun-Tinga) 
, Chen Shu-Minga), b) , Chen Jian-Juna) , Huang Peng-Chenga)
, Chen Shu-Ming
Fin width and height dependence of bipolar amplification in bulk FinFETs submitted to heavy ion irradiation |
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Yu Jun-Ting
, Chen Shu-Ming |
| (a) Charge collection with different W fin/ H fin in bulk FinFET versus diode devices. (b), (c) Bipolar amplification and SET voltage at FWHM as a function of W fin/ H fin in FinFETs, respectively. All simulations are conducted with the same ion LET at 10 MeV·cm2/mg. |
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