Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates

Chen Long^a),^b), Payne Justin^b), Strate Jan^b), Li Cheng^b), Zhang Jian-Ming^b), Yu Wen-Jie^a), Di Zeng-Feng^a), Wang Xi^a)

(a) Schematic structure of a (1 − 101) GaN microstripe LED. (b) An optical microscopic image of the InGaN/GaN MQW LED devices. (c) Photos showing electroluminescence of LED taken though the optical microscope.