Surface-type nonvolatile electric memory elements based on organic-on-organic CuPc-H2Pc heterojunction*
Karimov Khasan S.a),b), Ahmad Zubairc), Touati Faridc), Mahroof-Tahir M.d), Muqeet Rehman M.a), Zameer Abbas S.a)
       
Resistance–time relationships (in a switching interval of 1 h) for the nonvolatile electric memory surface-type element based on organic semiconductors CuPc and H2Pc (the gap between Ag and Cu films is 30 μm).