Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity
Chen Qing-Tao, Huang Yong-Qing†, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min
       
Relative response versus frequency. And the 3-dB bandwidth is 11 GHz at a reverse bias voltage of 3 V.