Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

Chen Qing-Tao, Huang Yong-Qing†, Fei Jia-Rui, Duan Xiao-Feng, Liu Kai, Liu Feng, Kang Chao, Wang Jun-Chu, Fang Wen-Jing, Ren Xiao-Min

Plots of calculated responsivity versus the wavelength of the UTC-PD. The responsivity is 1.071 A/W under a reverse bias voltage of 10 V at 1550-nm wavelength.