A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric
Krishna Saramekala Gopia) , Dubey Sarveshb) , Kumar Tiwari Pramod†a) 
A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric |
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Krishna Saramekala Gopi
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| Threshold voltage versus gate-dielectric constant ( ε k ). The other device parameters are described in the text. |
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