A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric
Krishna Saramekala Gopia), Dubey Sarveshb), Kumar Tiwari Pramod†a)
       
Threshold voltages versus gate length for different recessed oxide thickness values. The other device parameters are the same as those in Fig.  3 .