A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high-<em> k</em> dielectric

A threshold voltage model of short-channel fully-depleted recessed-source/drain (Re-S/D) SOI MOSFETs with high- k dielectric

Krishna Saramekala Gopi^a), Dubey Sarvesh^b), Kumar Tiwari Pramod†^a)

Back surface potentials versus channel length for various values of gate-dielectric constant ( ε _k). The other device parameters are the same as those in Fig. 3 .