Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFe<bold>O</bold><sub>3</sub> thin films

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

Lu Zeng-Xing^a), Song Xiao^a), Zhao Li-Na^a), Li Zhong-Wen^a), Lin Yuan-Bin^a), Zeng Min^a), Zhang Zhang^a), Lu Xu-Bing^a), Wu Su-Juan^a), Gao Xing-Sen†^a), Yan Zhi-Bo^b), Liu Jun-Ming‡^b)

I – V resistive switching loops each measured as a function of bias voltage sweep-rate for three different temperatures: (a) 253 K; (b) 298 K; (c) 373 K. The inset in panel (c) shows the P – V loops tested at different testing durations. Here, NRS stands for new resistive switching.