Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFe<bold>O</bold><sub>3</sub> thin films

Temperature dependences of ferroelectricity and resistive switching behavior of epitaxial BiFeO₃ thin films

Lu Zeng-Xing^a), Song Xiao^a), Zhao Li-Na^a), Li Zhong-Wen^a), Lin Yuan-Bin^a), Zeng Min^a), Zhang Zhang^a), Lu Xu-Bing^a), Wu Su-Juan^a), Gao Xing-Sen†^a), Yan Zhi-Bo^b), Liu Jun-Ming‡^b)

(a) XRD diffraction pattern for the epitaxial BFO/SRO/STO heterostructure. (b) Room temperature P – V loops measured at 5 kHz with various maximum bias voltages. (c) and (d) SEM images for surface and cross-section, respectively.