Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
Wang Xiao-Boa),b), Li Yongc), Yan Ling-Linga), Li Xin-Jian†a)
       
(a) I – V curve of GaN/Si-NPA. Inset: I – V curve of a coplanar Al/GaN/ITO structure. (b) Semilogarithm plot of I – V curve of GaN/Si-NPA. (c) Logarithm–logarithm plot of I – V curve of GaN/Si-NPA under forward bias. Inset: I / V – V plot of I – V curve of GaN/Si-NPA.