Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
Wang Xiao-Boa), b) , Li Yongc) , Yan Ling-Linga) , Li Xin-Jian†a) 
Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array |
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Wang Xiao-Bo
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| (a) PL spectrum of GaN/Si-NPA with an excitation wavelength of 270 nm and a long-pass filter centered at 320 nm used. (b) EL spectra of GaN/Si-NPA. |
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