The optimum image processing result of low-frequency filtering was obtained when LiNbO₃:Fe crystal as a spatial filter was placed at a certain position behind the spatial-frequency spectral plane of an optical Fourier transform system, which corresponds to the minimum transmittance ratio in Z-scan curve. The experimental results show that self-defocusing due to photorefractive negative-lens effect is the main factor responsible for the low- frequency filtering.

Raman spectra of Nd-doped LiTaO₃ have been measured at right angle scattering geome-tries at room temperature. The spectra have drastically anomalous phenomena as compared with those of pure LiTaO₃. We may attribute these anomalies to the enhanced photoinduced refractive index change and the change of LiTaO₃ microstructure resulting from Nd doping.

Natural xenon, contained in a ceil at a pressure of 6.5 atm, is frozen from 303 to 137 K on an WP-80SY NMR spectrometer. NMR signals of ¹²⁹Xe atoms in gaseous, liquid and solid phases are measured at various temperatures, We found that the chemical shift of NMR signal of liquid ¹²⁹Xe (expressed as ΔH) is directly proportional to the density of the sample with a coefficient of (4.73±0.05)×10^-7; and the chemical shift of NMR signal of solid ¹²⁹Xe (expressed as ΔH) is nearly proportional to the density of the sample with a coefficient of (5.00±0.08)×10^-7.

Starting from the phase space path integral, we have derived the Ward identities in canonical formalism for a system with regular and singular Lagrangian. This formulation differs from the traditional discussion based on path integral in configuration space. It is pointed out that the quantum canonical equations for systems with singular Lagrangians are different from the classical ones obtained from Dirac's conjecture, The preliminary applications of Ward identities in phase space to the Yang-Mills theory are given. Some relations among the proper vertices and propagators are deduced,the PCAC, AVV vertices and generalized PCAC expressions are also obtained. We have also pointed out that some authors in their early work had ignored the treatment of the constraints.

The Ta/Si multilayers on (100) Si substrate have been studied over the annealing temper-ature range from 500 to 900℃ by X-ray diffraction and cross-section transmission electron microscopy. The periodicity of the multilayers becomes worse with increasing annealing tem-perature and disappears at 750℃. At 600℃, two kinds of modulation wavelength coexist because the size of several TaSi₂ grains is larger than the contracted original modulation wavelength. The films are contracted after annealing. The largest contraction, at least 40nm decreasing in thickness, occurs at 600℃. When the annealing temperature is lower than 600℃, h-TaSi₂ grains grow randomly and the growth is not affected by the substrate. At temperatures higher than 750℃, h-TaSi₂ grows preferentially in [001] direction parallel to [100] axis of Si substrate. The appearance of texture depends on whether the atomic diffusion is short range or long range at the corresponding annealing temperature.

The distribution, morphology and structure of carbon nanotubes and buckyonions produced from an arc discharge were investigated by means of scanning electron mi-croscopy and high-resolution transmission electron microscopy, The nanotubes and nanoonions were found to be located mainly near the porous region of the core in the deposited rods and the transition region between the growth ring-shaped graphite sheets. The tube bundles grew freely from carbon particles. Apart from the straight-line tubes, curved and bent tubes were also found. Studies on the structure of them showed that the carbon atomic sheets in the nanotubes displayed a stepped bending. Transverse sectional study predicted a helical structure of the carbon atomic sheets. In addition, the relationship between the number of pentagonal rings and cone angle at the tips of the tubes, as well as the mechanism of the formation of the steplike structure, were discussed.

The response time of photoemissive materials is required for detecting ultrashort duration laser pulses. In this paper, the response time of photoemission in ultrafine particle thin film is studied, and the transit time spread (TTS) and response time of peak value (t_M) are discussed. The photoelectron's response time will increase with increasing energy of photons. If the surface potential barrier of thin film declines, the photoemissive sensitivity or quantum yield will rise, however the response time will also increase, which means that response-time characteristic gets worse. As an example, the response time for Ag-O-Cs thin film is calculated for different cases when photoelectrons, excited in Ag ultrafine particles, travel through Cs₂O semiconductor layer to the surface and escape into vacuum. The calculated response time is about 50 fs if this thin film is irradiated by infrared rays of wavelength 1.06μm.