Shi Xian-Long, Luo Xiao-Rong, Wei Jie, Tan Qiao, Liu Jian-Ping, Xu Qing, Li Peng-Cheng, Tian Rui-Chao, Ma Da
Chin. Phys. B 2014, 23 (12): 127303
A novel lateral double-diffused metal–oxide semiconductor (LDMOS) with a high breakdown voltage (BV) and low specific on-resistance (Ron.sp) is proposed and investigated by simulation. It features a junction field plate (JFP) over the drift region and a partial N-buried layer (PNB) in the P-su...
Hu Yin, He Da-Wei, Wang Yong-Sheng, Duan Jia-Hua, Wang Su-Feng, Fu Ming, Wang Wen-Shuo
Chin. Phys. B 2014, 23 (12): 128103
We report a facile method of synthesizing graphene quantum dots (GQDs) with tunable emission. The as-prepared GQDs each with a uniform lateral dimension of ca. 6 nm have fine solubility and high stability. The photoluminescence mechanism is further investigated based on the surfacestructure and the ...
Xia Min, Guo Hong-Yan, Dai Yong, Yan Qing-Zhi, Guo Li-Ping, Li Tie-Cheng, Qiao Yi, Ge Chang-Chun
Chin. Phys. B 2014, 23 (12): 127806
Solid helium bubbles were directly observed in the helium ion implanted tungsten (W), by different transmission electron microscopy (TEM) techniques at room temperature. The diameters of these solid helium bubbles range from 1 nm to 8 nm in diameter with the mean bubble size about 3 nm. The selected...