Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga <sub>2</sub>O <sub>3</sub>/p-diamond heterojunction

Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田)

Chin. Phys. B . 2022, (10): 108105 -108105 . DOI: 10.1088/1674-1056/ac7e37