Chinese Physics B
Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier
Ma Xiao-Hua (马晓华), Lü Min (吕敏), Pang Lei (庞磊), Jiang Yuan-Qi (姜元祺), Yang Jing-Zhi (杨靖治), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇)
Chin. Phys. B . 2014, (2): 27302 -027302 .  DOI: 10.1088/1674-1056/23/2/027302

Authors
  • Submit an article
  • Manuscript tracking
  • Call for papers
  • Scope
  • Instruction for authors
  • Copyright agreement
  • Templates
  • PACS
  • Flow chart
  • Author FAQs
    • Referees
  • Review policy
  • Referee login
  • Referee FAQs
  • Editor in chief login
  • Editor login
  • Office login
    • Browse
  • In press
  • Current issue
  • Previous issues
  • Special topics
  • Author index
  • Highlights
  • Annual highlights
  • View by fields
  • Top downloaded
  • SCI top cited
    • About
  • About CPB
  • Editorial board
  • Editorial Board of Young Scientists
  • SCI IF
  • Staff
  • Contact us
    • Copyright © Editorial Office of Chinese Physics B, All Rights Reserved.
    • Tel: 010-82649026   Fax: 010-82649027   E-mail: cpb@aphy.iphy.ac.cn
    • Sponsored by Institute of Physics, CAS & Chinese Physical Society
      Collaborating with IOP Publishing, UK in distribution