Chin. Phys. B
Citation Search Quick Search
2017, Vol. 26(9): 97401-097401    DOI: 10.1088/1674-1056/26/9/097401
Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌)
State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Received 2017-04-07  Revised 2017-05-24
Supplementary material


Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail:
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: