Chin. Phys. B
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2017, Vol. 26(9): 97401-097401    DOI: 10.1088/1674-1056/26/9/097401
Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌)
State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Received 2017-04-07  Revised 2017-05-24
Supplementary material

2017-097401-170709-sup.pdf

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