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ISSN 1674-1056 (Print)
CN 11-5639/O4
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TOPICAL REVIEW — 2D materials: physics and device applications

Atomic crystals resistive switching memory
Chunsen Liu(刘春森), David Wei Zhang(张卫), Peng Zhou(周鹏)
Chin. Phys. B, 2017 Vol. 26 (3): 033201 [Abstract] [HTML 0 KB][PDF 11820 KB] (767)
Optical properties of phosphorene
Jiong Yang, Yuerui Lu(卢曰瑞)
Chin. Phys. B, 2017 Vol. 26 (3): 034201 [Abstract] [HTML 0 KB][PDF 1568 KB] (537)
Two-dimensional materials for ultrafast lasers
Fengqiu Wang(王枫秋)
Chin. Phys. B, 2017 Vol. 26 (3): 034202 [Abstract] [HTML 0 KB][PDF 6019 KB] (540)
Graphene integrated photodetectors and opto-electronic devices–a review
Xiaomu Wang(王肖沐), Xuetao Gan(甘雪涛)
Chin. Phys. B, 2017 Vol. 26 (3): 034203 [Abstract] [HTML 0 KB][PDF 2127 KB] (467)
Band gap engineering of atomically thin two-dimensional semiconductors
Cui-Huan Ge(葛翠环), Hong-Lai Li(李洪来), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)
Chin. Phys. B, 2017 Vol. 26 (3): 034208 [Abstract] [HTML 0 KB][PDF 7933 KB] (527)
Thermal properties of two-dimensional materials
Gang Zhang(张刚), Yong-Wei Zhang(张永伟)
Chin. Phys. B, 2017 Vol. 26 (3): 034401 [Abstract] [HTML 0 KB][PDF 4492 KB] (520)
Photodetecting and light-emitting devices based on two-dimensional materials
Yuanfang Yu(于远方), Feng Miao(缪峰), Jun He(何军), Zhenhua Ni(倪振华)
Chin. Phys. B, 2017 Vol. 26 (3): 036801 [Abstract] [HTML 0 KB][PDF 7301 KB] (463)
Light-matter interaction of 2D materials: Physics and device applications
Zi-Wei Li(李梓维), Yi-Han Hu(胡义涵), Yu Li(李瑜), Zhe-Yu Fang(方哲宇)
Chin. Phys. B, 2017 Vol. 26 (3): 036802 [Abstract] [HTML 0 KB][PDF 5688 KB] (602)
A review for compact model of graphene field-effect transistors
Nianduan Lu(卢年端), Lingfei Wang(汪令飞), Ling Li(李泠), Ming Liu(刘明)
Chin. Phys. B, 2017 Vol. 26 (3): 036804 [Abstract] [HTML 0 KB][PDF 10934 KB] (374)
Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors
Jianlu Wang(王建禄), Weida Hu(胡伟达)
Chin. Phys. B, 2017 Vol. 26 (3): 037106 [Abstract] [HTML 0 KB][PDF 3372 KB] (560)
Topological transport in Dirac electronic systems: A concise review
Hua-Ding Song(宋化鼎), Dian Sheng(盛典), An-Qi Wang(王安琦), Jin-Guang Li(李金光), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏)
Chin. Phys. B, 2017 Vol. 26 (3): 037301 [Abstract] [HTML 0 KB][PDF 8290 KB] (732)
Toward high-performance two-dimensional black phosphorus electronic and optoelectronic devices
Xuefei Li(李学飞), Xiong Xiong(熊雄), Yanqing Wu(吴燕庆)
Chin. Phys. B, 2017 Vol. 26 (3): 037307 [Abstract] [HTML 0 KB][PDF 5935 KB] (278)
Review of ultrafast spectroscopy studies of valley carrier dynamics in two-dimensional semiconducting transition metal dichalcogenides
Dong Sun(孙栋), Jia-Wei Lai(赖佳伟), Jun-Chao Ma(马骏超), Qin-Sheng Wang(王钦生), Jing Liu (刘晶)
Chin. Phys. B, 2017 Vol. 26 (3): 037801 [Abstract] [HTML 0 KB][PDF 4761 KB] (356)
Graphene resistive random memory–the promising memory device in next generation
Xue-Feng Wang(王雪峰), Hai-Ming Zhao(赵海明), Yi Yang(杨轶), Tian-Ling Ren(任天令)
Chin. Phys. B, 2017 Vol. 26 (3): 038501 [Abstract] [HTML 0 KB][PDF 5614 KB] (759)
Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Xia Wei(魏侠), Fa-Guang Yan(闫法光), Chao Shen(申超), Quan-Shan Lv(吕全山), Kai-You Wang(王开友)
Chin. Phys. B, 2017 Vol. 26 (3): 038504 [Abstract] [HTML 0 KB][PDF 7098 KB] (352)
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