Chin. Phys. B
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ISSN 1674-1056 (Print)
CN 11-5639/O4
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SPECIAL TOPIC — A celebration of the 100th birthday of Kun Huang

Charge trapping memory device based on the Ga2O3 films as trapping and blocking layer
Bing Bai(白冰), Hong Wang(王宏), Yan Li(李岩), Yunxia Hao(郝云霞), Bo Zhang(张博), Boping Wang(王博平), Zihang Wang(王子航), Hongqi Yang(杨红旗), Qihang Gao(高启航), Chao Lü(吕超), Qingshun Zhang(张庆顺), Xiaobing Yan(闫小兵)
Chin. Phys. B, 2019 Vol. 28 (10): 106802 [Abstract] [HTML 0 KB][PDF 3326 KB] (128)
Magnetoresistance hysteresis in topological Kondo insulator SmB6 nanowire
Ling-Jian Kong(孔令剑), Yong Zhou(周勇), Hua-Ding Song(宋化鼎), Da-Peng Yu(俞大鹏), Zhi-Min Liao(廖志敏)
Chin. Phys. B, 2019 Vol. 28 (10): 107501 [Abstract] [HTML 0 KB][PDF 1379 KB] (116)
Two-dimensional XSe2 (X=Mn, V) based magnetic tunneling junctions with high Curie temperature
Longfei Pan(潘龙飞), Hongyu Wen(文宏玉), Le Huang(黄乐), Long Chen(陈龙), Hui-Xiong Deng(邓惠雄), Jian-Bai Xia(夏建白), Zhongming Wei(魏钟鸣)
Chin. Phys. B, 2019 Vol. 28 (10): 107504 [Abstract] [HTML 0 KB][PDF 3283 KB] (352)
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart
Chin. Phys. B, 2019 Vol. 28 (10): 107801 [Abstract] [HTML 0 KB][PDF 1215 KB] (153)
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