Other articles related with "interface":
104702 Na Xie(谢娜)
  Analysis of natural frequency for imaging interface in liquid lens
    Chin. Phys. B   2021 Vol.30 (10): 104702-104702 [Abstract] (6) [HTML 1 KB] [PDF 569 KB] ()
97506 Qian Chen(陈倩), Weiming Lv(吕伟明), Shangkun Li(李尚坤), Wenxing Lv(吕文星), Jialin Cai(蔡佳林), Yonghui Zhu(朱永慧), Jiachen Wang(王佳晨), Rongxin Li(李荣鑫), Baoshun Zhang(张宝顺), and Zhongming Zeng(曾中明)
  Spin orbit torques in Pt-based heterostructures with van der Waals interface
    Chin. Phys. B   2021 Vol.30 (9): 97506-097506 [Abstract] (33) [HTML 0 KB] [PDF 1182 KB] (24)
97101 Xue-Hua Liu(刘雪华), Wei-Feng Xie(谢伟锋), Yang Liu(刘杨), and Xu Zuo(左旭)
  Passivation and dissociation of Pb-type defects at a-SiO2/Si interface
    Chin. Phys. B   2021 Vol.30 (9): 97101-097101 [Abstract] (45) [HTML 1 KB] [PDF 1880 KB] (32)
80205 Jing Li(李京), Peng Zhu(朱鹏), Yuan-Yuan Sheng(盛圆圆), Lin Liu(刘麟), and Yong Luo(罗勇)
  Atomistic simulations of the lubricative mechanism of a nano-alkane lubricating film between two layers of Cu-Zn alloy
    Chin. Phys. B   2021 Vol.30 (8): 80205-080205 [Abstract] (44) [HTML 0 KB] [PDF 1968 KB] (20)
80202 Fu-Zhou Chen(陈富州), Chen Cheng(程晨), and Hong-Gang Luo(罗洪刚)
  Real-space parallel density matrix renormalization group with adaptive boundaries
    Chin. Phys. B   2021 Vol.30 (8): 80202-080202 [Abstract] (85) [HTML 1 KB] [PDF 782 KB] (53)
77303 Peng Liu(刘鹏), Ji-Long Hao(郝继龙), Sheng-Kai Wang(王盛凯), Nan-Nan You(尤楠楠), Qin-Yu Hu(胡钦宇), Qian Zhang(张倩), Yun Bai(白云), and Xin-Yu Liu(刘新宇)
  Impact of O2 post oxidation annealing on the reliability of SiC/SiO2 MOS capacitors
    Chin. Phys. B   2021 Vol.30 (7): 77303-077303 [Abstract] (30) [HTML 1 KB] [PDF 652 KB] (10)
66801 Tao Wang(王涛), Zhao-Hui Yu(于朝辉), Hao Huang(黄昊), Wei-Guang Kong(孔伟光), Wei Dang(党伟), and Xiao-Hui Zhao(赵晓辉)
  In-plane oriented CH3NH3PbI3 nanowire suppression of the interface electron transfer to PCBM
    Chin. Phys. B   2021 Vol.30 (6): 66801-066801 [Abstract] (32) [HTML 0 KB] [PDF 1472 KB] (10)
58101 Yu Fu(付裕), Rui-Min Xu(徐锐敏), Xin-Xin Yu(郁鑫鑫), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Tang-Sheng Chen(陈堂胜), Bo Yan(延波), Yan-Rong Li(李言荣), Zheng-Qiang Ma(马正强), and Yue-Hang Xu(徐跃杭)
  Enhanced interface properties of diamond MOSFETs with Al2O3 gate dielectric deposited via ALD at a high temperature
    Chin. Phys. B   2021 Vol.30 (5): 58101-058101 [Abstract] (34) [HTML 1 KB] [PDF 1096 KB] (17)
54601 Jingyu Han(韩靖宇), Zhijun Luo(罗治军), Yuling Zhang(张玉玲), and Shaoze Yan(阎绍泽)
  Experimental analysis of interface contact behavior using a novel image processing method
    Chin. Phys. B   2021 Vol.30 (5): 54601-054601 [Abstract] (49) [HTML 1 KB] [PDF 2354 KB] (43)
48504 Xi-Ming Chen(陈喜明), Bang-Bing Shi(石帮兵), Xuan Li(李轩), Huai-Yun Fan(范怀云), Chen-Zhan Li(李诚瞻), Xiao-Chuan Deng(邓小川), Hai-Hui Luo(罗海辉), Yu-Dong Wu(吴煜东), and Bo Zhang(张波)
  Characteristics and mechanisms of subthreshold voltage hysteresis in 4H-SiC MOSFETs
    Chin. Phys. B   2021 Vol.30 (4): 48504- [Abstract] (90) [HTML 0 KB] [PDF 789 KB] (46)
46802 Yan-Mei Jing(荆艳梅) and Shao-Song Huang(黄绍松)
  First principles study of behavior of helium at Fe(110)-graphene interface
    Chin. Phys. B   2021 Vol.30 (4): 46802- [Abstract] (49) [HTML 0 KB] [PDF 1009 KB] (12)
38502 Heng Yue(岳恒), Anqi Hu(胡安琪), Qiaoli Liu(刘巧莉), Huijun Tian(田慧军), Chengri Hu(胡成日), Xiansong Ren(任显松), Nianyu Chen(陈年域), Chen Ge(葛琛), Kuijuan Jin(金奎娟), and Xia Guo(郭霞)
  Graphene/SrTiO3 interface-based UV photodetectors with high responsivity
    Chin. Phys. B   2021 Vol.30 (3): 38502- [Abstract] (76) [HTML 1 KB] [PDF 977 KB] (49)
38101 Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮)
  Vertical GaN Shottky barrier diode with thermally stable TiN anode
    Chin. Phys. B   2021 Vol.30 (3): 38101- [Abstract] (82) [HTML 1 KB] [PDF 1698 KB] (28)
38801 Zhenyun Zhang(张振雲), Lei Xu(许磊), and Junjie Qi(齐俊杰)
  Improved efficiency and stability of perovskite solar cells with molecular ameliorating of ZnO nanorod/perovskite interface and Mg-doping ZnO
    Chin. Phys. B   2021 Vol.30 (3): 38801- [Abstract] (146) [HTML 1 KB] [PDF 1209 KB] (119)
17803 Xiao-Long Tang(唐小龙), Xin-Lu Cheng(程新路), Hua-Liang Cao(曹华亮), and Hua-Dong Zeng(曾华东)
  Optical properties of several ternary nanostructures
    Chin. Phys. B   2021 Vol.30 (1): 17803- [Abstract] (55) [HTML 1 KB] [PDF 761 KB] (30)
128801 Quan-Zhen Sun(孙全震), Hong-Jie Jia(贾宏杰), Shu-Ying Cheng(程树英), Hui Deng(邓辉)\ccclink, Qiong Yan(严琼), Bi-Wen Duan(段碧雯), Cai-Xia Zhang(张彩霞), Qiao Zheng(郑巧), Zhi-Yuan Yang(杨志远), Yan-Hong Luo(罗艳红), Qing-Bo Men(孟庆波), and Shu-Juan Huang(黄淑娟)
  A 9% efficiency of flexible Mo-foil-based Cu2ZnSn(S, Se)4 solar cells by improving CdS buffer layer and heterojunction interface
    Chin. Phys. B   2020 Vol.29 (12): 128801- [Abstract] (93) [HTML 1 KB] [PDF 1463 KB] (17)
107302 Si-Qi Jing(荆思淇), Xiao-Hua Ma(马晓华), Jie-Jie Zhu(祝杰杰)†, Xin-Chuang Zhang(张新创), Si-Yu Liu(刘思雨), Qing Zhu(朱青), and Yue Hao(郝跃)
  Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments
    Chin. Phys. B   2020 Vol.29 (10): 107302- [Abstract] (83) [HTML 1 KB] [PDF 1123 KB] (29)
116803 Jiani Hong(洪嘉妮) and Ying Jiang(江颖)
  Atomic-level characterization of liquid/solid interface
    Chin. Phys. B   2020 Vol.29 (11): 116803- [Abstract] (152) [HTML 1 KB] [PDF 2242 KB] (199)
97301 Ji-Long Hao(郝继龙), Yun Bai(白云), Xin-Yu Liu(刘新宇), Cheng-Zhan Li(李诚瞻), Yi-Dan Tang(汤益丹), Hong Chen(陈宏), Xiao-Li Tian(田晓丽), Jiang Lu(陆江), Sheng-Kai Wang(王盛凯)
  Improved electrical properties of NO-nitrided SiC/SiO2 interface after electron irradiation
    Chin. Phys. B   2020 Vol.29 (9): 97301-097301 [Abstract] (108) [HTML 0 KB] [PDF 547 KB] (43)
96701 He Guan(关赫), Cheng-Yu Jiang(姜成语), Shao-Xi Wang(王少熙)
  Effect of annealing temperature on interfacial and electrical performance of Au-Pt-Ti/HfAlO/InAlAs metal-oxide-semiconductor capacitor
    Chin. Phys. B   2020 Vol.29 (9): 96701-096701 [Abstract] (124) [HTML 0 KB] [PDF 1725 KB] (63)
90701 Zhi-Hong Ye(叶志红), Xiao-Lin Wu(吴小林), Yao-Yao Li(李尧尧)
  Coupling analysis of transmission lines excited by space electromagnetic fields based on time domain hybrid method using parallel technique
    Chin. Phys. B   2020 Vol.29 (9): 90701-090701 [Abstract] (91) [HTML 0 KB] [PDF 913 KB] (52)
88503 Jing Zeng(曾晶), Ke-Qiu Chen(陈克求), Yanhong Zhou(周艳红)
  Exploring how hydrogen at gold-sulfur interface affects spin transport in single-molecule junction
    Chin. Phys. B   2020 Vol.29 (8): 88503-088503 [Abstract] (97) [HTML 0 KB] [PDF 1678 KB] (55)
67203 Ya-Wen Zhao(赵亚文), Liu-An Li(李柳暗), Tao-Tao Que(阙陶陶), Qiu-Ling Qiu(丘秋凌), Liang He(何亮), Zhen-Xing Liu(刘振兴), Jin-Wei Zhang(张津玮), Qian-Shu Wu(吴千树), Jia Chen(陈佳), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬)
  Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric
    Chin. Phys. B   2020 Vol.29 (6): 67203-067203 [Abstract] (183) [HTML 1 KB] [PDF 770 KB] (103)
48801 Cao-Yu Long(龙操玉), Ning Wang(王宁), Ke-Qing Huang(黄可卿), Heng-Yue Li(李恒月), Biao Liu(刘标), Jun-Liang Yang(阳军亮)
  Two-step processed efficient perovskite solar cells via improving perovskite/PTAA interface using solvent engineering in PbI2 precursor
    Chin. Phys. B   2020 Vol.29 (4): 48801-048801 [Abstract] (174) [HTML 1 KB] [PDF 1666 KB] (104)
47304 Qing Zhu(朱青), Xiao-Hua Ma(马晓华), Yi-Lin Chen(陈怡霖), Bin Hou(侯斌), Jie-Jie Zhu(祝杰杰), Meng Zhang(张濛), Mei Wu(武玫), Ling Yang(杨凌), Yue Hao(郝跃)
  Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs
    Chin. Phys. B   2020 Vol.29 (4): 47304-047304 [Abstract] (162) [HTML 1 KB] [PDF 753 KB] (131)
37301 Xin-Yu Liu(刘新宇), Ji-Long Hao(郝继龙), Nan-Nan You(尤楠楠), Yun Bai(白云), Yi-Dan Tang(汤益丹), Cheng-Yue Yang(杨成樾), Sheng-Kai Wang(王盛凯)
  High-mobility SiC MOSFET with low density of interface traps using high pressure microwave plasma oxidation
    Chin. Phys. B   2020 Vol.29 (3): 37301-037301 [Abstract] (195) [HTML 1 KB] [PDF 1104 KB] (124)
37501 Qian Zhao(赵倩), Xin-Xin He(何鑫鑫), Francois-Jacques Morvan(李文瀚), Guo-Ping Zhao(赵国平), Zhu-Bai Li(李柱柏)
  Three- and two-dimensional calculations for the interface anisotropy dependence of magnetic properties of exchange-spring Nd2Fe14B/α-Fe multilayers with out-of-plane easy axes
    Chin. Phys. B   2020 Vol.29 (3): 37501-037501 [Abstract] (138) [HTML 1 KB] [PDF 1128 KB] (101)
14211 M R C Mahdy, Hamim Mahmud Rivy, Ziaur Rahman Jony, Nabila Binte Alam, Nabila Masud, Golam Dastegir Al Quaderi, Ibraheem Muhammad Moosa, Chowdhury Mofizur Rahman, M Sohel Rahman
  Dielectric or plasmonic Mie object at air-liquid interface: The transferred and the traveling momenta of photon
    Chin. Phys. B   2020 Vol.29 (1): 14211-014211 [Abstract] (227) [HTML 1 KB] [PDF 3531 KB] (134)
127703 Lin Zhou(周琳), Lu Liu(刘璐), Yu-Heng Deng(邓煜恒), Chun-Xia Li(李春霞), Jing-Ping Xu(徐静平)
  Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content
    Chin. Phys. B   2019 Vol.28 (12): 127703-127703 [Abstract] (126) [HTML 1 KB] [PDF 1950 KB] (75)
104701 Jia-Xian Qin(秦嘉贤), Ya-Ming Chen(陈亚铭), Xiao-Gang Deng(邓小刚)
  Stabilized seventh-order dissipative compact scheme for two-dimensional Euler equations
    Chin. Phys. B   2019 Vol.28 (10): 104701-104701 [Abstract] (182) [HTML 1 KB] [PDF 559 KB] (99)
67304 Si-Qin-Gao-Wa Bao(包斯琴高娃), Xiao-Hua Ma(马晓华), Wei-Wei Chen(陈伟伟), Ling Yang(杨凌), Bin Hou(侯斌), Qing Zhu(朱青), Jie-Jie Zhu(祝杰杰), Yue Hao(郝跃)
  Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
    Chin. Phys. B   2019 Vol.28 (6): 67304-067304 [Abstract] (230) [HTML 1 KB] [PDF 591 KB] (152)
57201 Wen-Xiang Chen(陈文祥), Rui-Qiang Wang(王瑞强), Liang-Bin Hu(胡梁宾)
  Effects of interface bound states on the shot noise in normal metal-low-dimensional Rashba semiconductor tunnel junctions with induced s-wave pairing potential
    Chin. Phys. B   2019 Vol.28 (5): 57201-057201 [Abstract] (196) [HTML 1 KB] [PDF 457 KB] (113)
47101 Fu-Ning Wang(王芙凝), Ji-Chao Li(李吉超), Yi Li(李宜), Xin-Miao Zhang(张鑫淼), Xue-Jin Wang(王学晋), Yu-Fei Chen(陈宇飞), Jian Liu(刘剑), Chun-Lei Wang(王春雷), Ming-Lei Zhao(赵明磊), Liang-Mo Mei(梅良模)
  Prediction of high-mobility two-dimensional electron gas at KTaO3-based heterointerfaces
    Chin. Phys. B   2019 Vol.28 (4): 47101-047101 [Abstract] (205) [HTML 1 KB] [PDF 999 KB] (131)
26801 San-Jie Liu(刘三姐), Ying-Feng He(何荧峰), Hui-Yun Wei(卫会云), Peng Qiu(仇鹏), Yi-Meng Song(宋祎萌), Yun-Lai An(安运来), Abdul Rehman(阿布度-拉赫曼), Ming-Zeng Peng(彭铭曾), Xin-He Zheng(郑新和)
  PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces
    Chin. Phys. B   2019 Vol.28 (2): 26801-026801 [Abstract] (216) [HTML 1 KB] [PDF 2416 KB] (188)
117804 Hong Yan(闫虹), Zhaoting Zhang(张兆亭), Shuanhu Wang(王拴虎), Kexin Jin(金克新)
  Review of photoresponsive properties at SrTiO3-based heterointerfaces
    Chin. Phys. B   2018 Vol.27 (11): 117804-117804 [Abstract] (200) [HTML 1 KB] [PDF 6583 KB] (376)
107202 Xian-Rong Gu(谷现荣), Li-Dan Guo(郭立丹), Xiang-Nan Sun(孙向南)
  Recent spinterfacial studies targeted to spin manipulation in molecular spintronic devices
    Chin. Phys. B   2018 Vol.27 (10): 107202-107202 [Abstract] (214) [HTML 1 KB] [PDF 3526 KB] (246)
107901 Zhen-Hua Wang(王振华), Xuan P A Gao(高翾), Zhi-Dong Zhang(张志东)
  Transport properties of doped Bi2Se3 and Bi2Te3 topological insulators and heterostructures
    Chin. Phys. B   2018 Vol.27 (10): 107901-107901 [Abstract] (247) [HTML 1 KB] [PDF 2709 KB] (644)
97303 Wenhong Ouyang(欧阳文泓), Wensheng Lai(赖文生), Zhengjun Zhang(张政军)
  Ab initio study of H/O trapping and clustering on U/Al interface
    Chin. Phys. B   2018 Vol.27 (9): 97303-097303 [Abstract] (251) [HTML 1 KB] [PDF 1279 KB] (123)
97203 Yi-Dong Wang(王一栋), Jun Chen(陈俊)
  Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode
    Chin. Phys. B   2018 Vol.27 (9): 97203-097203 [Abstract] (226) [HTML 1 KB] [PDF 1187 KB] (137)
86801 Yanjie Li(李艳杰), Xiangqin Li(李香琴), Tianqing Liu(刘天庆), Weiguo Song(宋伟国)
  Analysis of meniscus beneath metastable droplets and wetting transition on micro/nano textured surfaces
    Chin. Phys. B   2018 Vol.27 (8): 86801-086801 [Abstract] (169) [HTML 0 KB] [PDF 801 KB] (131)
63601 Fei Sun(孙飞)
  Orienting the future of bio-macromolecular electron microscopy
    Chin. Phys. B   2018 Vol.27 (6): 63601-063601 [Abstract] (474) [HTML 1 KB] [PDF 1236 KB] (301)
58101 Kong-Ping Wu(吴孔平), Wen-Fei Ma(马文飞), Chang-Xu Sun(孙昌旭), Chang-Zhao Chen(陈昌兆), Liu-Yi Ling(凌六一), Zhong-Gen Wang(王仲根)
  Band offset and electronic properties at semipolar plane AlN(1101)/diamond heterointerface
    Chin. Phys. B   2018 Vol.27 (5): 58101-058101 [Abstract] (194) [HTML 0 KB] [PDF 1211 KB] (191)
47207 Tian-Qi Lu(陆天奇), Peng-Fei Nan(南鹏飞), Si-Long Song(宋思龙), Xin-Yue Zhu(朱欣悦), Huai-Zhou Zhao(赵怀周), Yuan Deng(邓元)
  Enhanced thermoelectric performance through homogenously dispersed MnTe nanoparticles in p-type Bi0.52Sb1.48Te3 nanocomposites
    Chin. Phys. B   2018 Vol.27 (4): 47207-047207 [Abstract] (384) [HTML 1 KB] [PDF 1119 KB] (322)
47103 Yi-Jie Zhang(张轶杰), Zhi-Peng Yin(尹志鹏), Yan Su(苏艳), De-Jun Wang(王德君)
  Passivation of carbon dimer defects in amorphous SiO2/4H-SiC (0001) interface: A first-principles study
    Chin. Phys. B   2018 Vol.27 (4): 47103-047103 [Abstract] (278) [HTML 1 KB] [PDF 3197 KB] (205)
38201 Shi-Gang Ling(凌仕刚), Jia-Yue Peng(彭佳悦), Qi Yang(杨琪), Ji-Liang Qiu(邱纪亮), Jia-Ze Lu(卢嘉泽), Hong Li(李泓)
  Enhanced ionic conductivity in LAGP/LATP composite electrolyte
    Chin. Phys. B   2018 Vol.27 (3): 38201-038201 [Abstract] (310) [HTML 0 KB] [PDF 788 KB] (545)
37102 Yunliang Yue(乐云亮), Yu Song(宋宇), Xu Zuo(左旭)
  First-principles investigations of proton generation in α-quartz
    Chin. Phys. B   2018 Vol.27 (3): 37102-037102 [Abstract] (303) [HTML 1 KB] [PDF 4927 KB] (297)
24203 Pei Pei(裴培), He-Fei Huang(黄鹤飞), Yan-Qing Guo(郭彦青), Xing-Yuan Zhang(张兴远), Jia-Feng Dai(戴佳峰)
  Quantum state transfer via a hybrid solid-optomechanical interface
    Chin. Phys. B   2018 Vol.27 (2): 24203-024203 [Abstract] (329) [HTML 1 KB] [PDF 738 KB] (169)
18803 Shoushuai Gao(高守帅), Zhenwu Jiang(姜振武), Li Wu(武莉), Jianping Ao(敖建平), Yu Zeng(曾玉), Yun Sun(孙云), Yi Zhang(张毅)
  Interfaces of high-efficiency kesterite Cu2ZnSnS(e)4 thin film solar cells
    Chin. Phys. B   2018 Vol.27 (1): 18803-018803 [Abstract] (473) [HTML 1 KB] [PDF 6884 KB] (817)
18503 Shuaipu Zang(臧帅普), Yinglin Wang(王莹琳), Meiying Li(李美莹), Wei Su(苏蔚), Meiqi An(安美琦), Xintong Zhang(张昕彤), Yichun Liu(刘益春)
  Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer
    Chin. Phys. B   2018 Vol.27 (1): 18503-018503 [Abstract] (263) [HTML 1 KB] [PDF 1347 KB] (295)
17502 Fei Guo(郭飞), Yaping Wu(吴雅苹), Zhiming Wu(吴志明), Ting Chen(陈婷), Heng Li(李恒), Chunmiao Zhang(张纯淼), Mingming Fu(付明明), Yihong Lu(卢奕宏), Junyong Kang(康俊勇)
  Strong anti-strain capacity of CoFeB/MgO interface on electronic structure and state coupling
    Chin. Phys. B   2018 Vol.27 (1): 17502-017502 [Abstract] (251) [HTML 1 KB] [PDF 2494 KB] (160)
127701 Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门)
  Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
    Chin. Phys. B   2017 Vol.26 (12): 127701-127701 [Abstract] (248) [HTML 0 KB] [PDF 659 KB] (224)
126802 Yuan-Yuan Tian(田圆圆), Jia Li(李甲), Ze-Ying Hu(胡泽英), Zhi-Peng Wang(王志鹏), Qi-Hong Fang(方棋洪)
  Molecular dynamics study of plastic deformation mechanism in Cu/Ag multilayers
    Chin. Phys. B   2017 Vol.26 (12): 126802-126802 [Abstract] (392) [HTML 0 KB] [PDF 608 KB] (218)
124301 Hao-Ran Ding(丁浩然), Jin-Xia Liu(刘金霞), Zhi-Wen Cui(崔志文), Tribikram Kundu
  Seismoelectric wave propagation modeling in a borehole in water-saturated porous medium having an electrochemical interface
    Chin. Phys. B   2017 Vol.26 (12): 124301-124301 [Abstract] (201) [HTML 1 KB] [PDF 891 KB] (195)
108801 Hadi Bashiri, Mohammad Azim Karami, Shahramm Mohammadnejad
  Improvement in IBC-silicon solar cell performance by insertion of highly doped crystalline layer at heterojunction interfaces
    Chin. Phys. B   2017 Vol.26 (10): 108801-108801 [Abstract] (228) [HTML 1 KB] [PDF 389 KB] (224)
108503 Yan Zeng(曾严), Xiao-Jin Li(李小进), Jian Qing(卿健), Ya-Bin Sun(孙亚宾), Yan-Ling Shi(石艳玲), Ao Guo(郭奥), Shao-Jian Hu(胡少坚)
  Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models
    Chin. Phys. B   2017 Vol.26 (10): 108503-108503 [Abstract] (242) [HTML 1 KB] [PDF 701 KB] (247)
107101 Zhan-Wei Shen(申占伟), Feng Zhang(张峰), Sima Dimitrijev, Ji-Sheng Han(韩吉胜), Guo-Guo Yan(闫果果), Zheng-Xin Wen(温正欣), Wan-Shun Zhao(赵万顺), Lei Wang(王雷), Xing-Fang Liu(刘兴昉), Guo-Sheng Sun(孙国胜), Yi-Ping Zeng(曾一平)
  Comparative study of electrical characteristics for n-type 4H-SiC planar and trench MOS capacitors annealed in ambient NO
    Chin. Phys. B   2017 Vol.26 (10): 107101-107101 [Abstract] (201) [HTML 1 KB] [PDF 1086 KB] (340)
74601 Baojiang Song(宋保江), Shaoze Yan(阎绍泽)
  Relationship between the real contact area and contact force in pre-sliding regime
    Chin. Phys. B   2017 Vol.26 (7): 74601-074601 [Abstract] (262) [HTML 1 KB] [PDF 903 KB] (202)
68802 Zhi Qiao(乔治), Jian-Li Ji(冀建利), Yan-Li Zhang(张彦立), Hu Liu(刘虎), Tong-Kai Li(李同锴)
  Influence of interface states, conduction band offset, and front contact on the performance of a-SiC: H(n)/c-Si(p) heterojunction solar cells
    Chin. Phys. B   2017 Vol.26 (6): 68802-068802 [Abstract] (281) [HTML 1 KB] [PDF 392 KB] (475)
48104 You-Peng Xiao(肖友鹏), Xiu-Qin Wei(魏秀琴), Lang Zhou(周浪)
  Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell
    Chin. Phys. B   2017 Vol.26 (4): 48104-048104 [Abstract] (255) [HTML 1 KB] [PDF 367 KB] (306)
45201 Ming Gao(高明), Hui-Wei Du(杜汇伟), Jie Yang(杨洁), Lei Zhao(赵磊), Jing Xu(徐静), Zhong-Quan Ma(马忠权)
  Variation of passivation behavior induced by sputtered energetic particles and thermal annealing for ITO/SiOx/Si system
    Chin. Phys. B   2017 Vol.26 (4): 45201-045201 [Abstract] (244) [HTML 1 KB] [PDF 1051 KB] (264)
37104 Wenbo Li(李文波), Ling Li(李玲), Fangfang Wang(王方方), Liu Zheng(郑柳), Jinghua Xia(夏经华), Fuwen Qin(秦福文), Xiaolin Wang(王晓琳), Yongping Li(李永平), Rui Liu(刘瑞), Dejun Wang(王德君), Yan Pan(潘艳), Fei Yang(杨霏)
  Passivation effects of phosphorus on 4H-SiC (0001) Si dangling bonds: A first-principles study
    Chin. Phys. B   2017 Vol.26 (3): 37104-037104 [Abstract] (321) [HTML 1 KB] [PDF 1782 KB] (557)
127301 Xiao-Jie Jia(贾晓洁), Chun-Lan Zhou(周春兰), Jun-Jie Zhu(朱俊杰), Su Zhou(周肃), Wen-Jing Wang(王文静)
  Effect of PECVD SiNx/SiOyNx-Si interface property on surface passivation of silicon wafer
    Chin. Phys. B   2016 Vol.25 (12): 127301-127301 [Abstract] (267) [HTML 1 KB] [PDF 362 KB] (886)
127102 Wujisiguleng Bao(包乌吉斯古楞), Sachuronggui(萨初荣贵), Fang-Yuan Qiu(仇方圆)
  Band offsets engineering at CdxZn1-xS/Cu2ZnSnS4 heterointerface
    Chin. Phys. B   2016 Vol.25 (12): 127102-127102 [Abstract] (341) [HTML 1 KB] [PDF 397 KB] (301)
124601 Hong-Rui Ao(敖宏瑞), Zhi-Ying Han(韩志英), Kai Zhang(张凯), Hong-Yuan Jiang(姜洪源)
  Lubricant film flow and depletion characteristics at head/disk storage interface
    Chin. Phys. B   2016 Vol.25 (12): 124601-124601 [Abstract] (156) [HTML 1 KB] [PDF 1267 KB] (176)
124306 Zhao-Hui Peng(彭朝晖), Ling-Shan Zhang(张灵珊)
  A review of research progress in air-to-water sound transmission
    Chin. Phys. B   2016 Vol.25 (12): 124306-124306 [Abstract] (374) [HTML 1 KB] [PDF 543 KB] (323)
123101 Hong-Xia Liu(柳红霞), Fu-Ling Tang(汤富领), Hong-Tao Xue(薛红涛), Yu Zhang(张宇), Yu-Wen Cheng(程育汶), Yu-Dong Feng(冯煜东)
  Lattice structures and electronic properties of WZ-CuInS2/WZ-CdS interface from first-principles calculations
    Chin. Phys. B   2016 Vol.25 (12): 123101-123101 [Abstract] (253) [HTML 1 KB] [PDF 3247 KB] (346)
118801 Yanjiao Shen(沈艳娇), Jianhui Chen(陈剑辉), Jing Yang(杨静), Bingbing Chen(陈兵兵), Jingwei Chen(陈静伟), Feng Li(李峰), Xiuhong Dai(代秀红), Haixu Liu(刘海旭), Ying Xu(许颖), Yaohua Mai(麦耀华)
  Control of epitaxial growth at a-Si: H/c-Si heterointerface by the working pressure in PECVD
    Chin. Phys. B   2016 Vol.25 (11): 118801-118801 [Abstract] (291) [HTML 1 KB] [PDF 1393 KB] (384)
114601 Bing-Bing Zhao(赵兵兵), Ying Wang(王影), Chang Liu(刘畅), Xiao-Chun Wang(王晓春)
  Molecular dynamics simulation of structural change at metal/semiconductor interface induced by nanoindenter
    Chin. Phys. B   2016 Vol.25 (11): 114601-114601 [Abstract] (223) [HTML 1 KB] [PDF 5870 KB] (374)
97101 Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明)
  Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
    Chin. Phys. B   2016 Vol.25 (9): 97101-097101 [Abstract] (263) [HTML 0 KB] [PDF 775 KB] (321)
87305 Hao Xu(徐昊), Hong Yang(杨红), Wei-Chun Luo(罗维春), Ye-Feng Xu(徐烨峰), Yan-Rong Wang(王艳蓉), Bo Tang(唐波), Wen-Wu Wang(王文武), Lu-Wei Qi(祁路伟), Jun-Feng Li(李俊峰), Jiang Yan(闫江), Hui-Long Zhu(朱慧珑), Chao Zhao(赵超), Da-Peng Chen(陈大鹏), Tian-Chun Ye(叶甜春)
  Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations
    Chin. Phys. B   2016 Vol.25 (8): 87305-087305 [Abstract] (237) [HTML 1 KB] [PDF 1174 KB] (510)
76802 Sheng-Chun Shen(沈胜春), Yan-Peng Hong(洪彦鹏), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Xin-Xin Wang(王欣欣), Jia-Cai Nie(聂家财)
  In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface
    Chin. Phys. B   2016 Vol.25 (7): 76802-076802 [Abstract] (256) [HTML 1 KB] [PDF 614 KB] (441)
67104 Min Sun(孙敏), Chong-Yu Wang(王崇愚)
  3Al interface of Ni-based single crystal superalloy[J]. Chinese Physics B, 2016,25(6): 67104-067104")'/> First principles study of the diffusional phenomena across the clean and Re-doped γ-Ni/γ'-Ni3Al interface of Ni-based single crystal superalloy
    Chin. Phys. B   2016 Vol.25 (6): 67104-067104 [Abstract] (240) [HTML 1 KB] [PDF 19025 KB] (269)
64701 Zheng Fu(付峥), Shi-Yu Wu(吴士玉), Kai-Xin Liu(刘凯欣)
  Gradient-augmented hybrid interface capturing method for incompressible two-phase flow
    Chin. Phys. B   2016 Vol.25 (6): 64701-064701 [Abstract] (261) [HTML 1 KB] [PDF 1550 KB] (243)
66802 Jie Yang(杨洁), Pei Wang(汪沛), Guo-Zhao Zhang(张国召), Xiao-Xue Zhou(周晓雪), Jing Li(李静), Cai-Long Liu(刘才龙)
  Effects of grinding-induced grain boundary and interfaces on electrical transportation and structure phase transition in ZnSe under high pressure
    Chin. Phys. B   2016 Vol.25 (6): 66802-066802 [Abstract] (230) [HTML 1 KB] [PDF 304 KB] (281)
57302 Priyadarshini Parida, Biplab Ganguli
  Electronic and magnetic properties at rough alloyed interfaces of Fe/Co on Au substrates: An augmented space study
    Chin. Phys. B   2016 Vol.25 (5): 57302-057302 [Abstract] (205) [HTML 1 KB] [PDF 275 KB] (256)
38402 Taohong Wang(王桃红), Changbo Chen(陈长博), Kunping Guo(郭坤平), Guo Chen(陈果), Tao Xu(徐韬), Bin Wei(魏斌)
  Improved performance of polymer solar cells by using inorganic, organic, and doped cathode buffer layers
    Chin. Phys. B   2016 Vol.25 (3): 38402-038402 [Abstract] (306) [HTML 1 KB] [PDF 1021 KB] (475)
28201 Xue-Jin Wang(王学进), Zheng-Fei Guo(郭正飞), Jing-Yu Qu(曲婧毓),Kun Pan(潘坤), Zheng Qi(祁铮), Hong Li(李泓)
  In-situ characterization of electrochromism based on ITO/PEDOT:PSS towards preparation of high performance device
    Chin. Phys. B   2016 Vol.25 (2): 28201-028201 [Abstract] (302) [HTML 1 KB] [PDF 1076 KB] (603)
18802 Xiayin Yao(姚霞银), Bingxin Huang(黄冰心), Jingyun Yin(尹景云), Gang Peng(彭刚), Zhen Huang(黄祯), Chao Gao(高超), Deng Liu(刘登), Xiaoxiong Xu(许晓雄)
  All-solid-state lithium batteries with inorganic solid electrolytes: Review of fundamental science
    Chin. Phys. B   2016 Vol.25 (1): 18802-018802 [Abstract] (795) [HTML 1 KB] [PDF 5055 KB] (4055)
18202 Shaofei Wang(王少飞) and Liquan Chen(陈立泉)
  Interfacial transport in lithium-ion conductors
    Chin. Phys. B   2016 Vol.25 (1): 18202-018202 [Abstract] (404) [HTML 1 KB] [PDF 2693 KB] (696)
18103 Zi-Yu Liu(刘子玉), Jian Cai(蔡坚), Qian Wang(王谦), Yu Chen(陈瑜)
  Detection and formation mechanism of micro-defects in ultrafine pitch Cu–Cu direct bonding
    Chin. Phys. B   2016 Vol.25 (1): 18103-018103 [Abstract] (333) [HTML 1 KB] [PDF 1181 KB] (336)
17302 Pan Zhou(周攀) and Da-Wei He(何大伟)
  Modulating doping and interface magnetism ofepitaxial graphene on SiC(0001)
    Chin. Phys. B   2016 Vol.25 (1): 17302-017302 [Abstract] (253) [HTML 1 KB] [PDF 3351 KB] (411)
126701 Guan He, Lv Hong-Liang, Guo Hui, Zhang Yi-Men, Zhang Yu-Ming, Wu Li-Fan
  Interfacial and electrical characteristics of a HfO2/n-InAlAs MOS-capacitor with different dielectric thicknesses
    Chin. Phys. B   2015 Vol.24 (12): 126701-126701 [Abstract] (243) [HTML 1 KB] [PDF 305 KB] (388)
126401 Li Yong-Sheng, Wu Xing-Chao, Liu Wei, Hou Zhi-Yuan, Mei Hao-Jie
  Effects of temperature gradient on the interface microstructure and diffusion of diffusion couples: Phase-field simulation
    Chin. Phys. B   2015 Vol.24 (12): 126401-126401 [Abstract] (307) [HTML 1 KB] [PDF 1706 KB] (367)
117902 Peng Rui, Xu Hai-Chao, Feng Dong-Lai
  In-situ spectroscopic studies and interfacial engineering on FeSe/oxide heterostructures: Insights on the interfacial superconductivity
    Chin. Phys. B   2015 Vol.24 (11): 117902-117902 [Abstract] (494) [HTML 1 KB] [PDF 2794 KB] (1080)
116801 Liu Tian-Qing, Li Yan-Jie, Li Xiang-Qin, Sun Wei
  Theoretical analysis of droplet transition from Cassie to Wenzel state
    Chin. Phys. B   2015 Vol.24 (11): 116801-116801 [Abstract] (226) [HTML 1 KB] [PDF 1043 KB] (303)
107701 Li Xue-Dong, Liu Hong, Wu Jia-Gang, Liu Gang, Xiao Ding-Quan, Zhu Jian-Guo
  The interface density dependence of the electrical properties of 0.9Pb(Sc0.5Ta0.5)O3-0.1PbTiO3/0.55Pb(Sc0.5Ta0.5)O3-0.45PbTiO3 multilayer thin films
    Chin. Phys. B   2015 Vol.24 (10): 107701-107701 [Abstract] (244) [HTML 1 KB] [PDF 1418 KB] (330)
107306 Hong Wen-Ting, Han Wei-Hua, Lyu Qi-Feng, Wang Hao, Yang Fu-Hua
  Fermi level pinning effects at gate-dielectric interfaces influenced by interface state densities
    Chin. Phys. B   2015 Vol.24 (10): 107306-107306 [Abstract] (236) [HTML 1 KB] [PDF 325 KB] (842)
107303 Cheng Yue, Zhao Gao-Jie, Liu Yi-Hong, Sun Yu-Jun, Wang Tao, Chen Zhi-Zhan
  Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H-SiC contacts
    Chin. Phys. B   2015 Vol.24 (10): 107303-107303 [Abstract] (412) [HTML 1 KB] [PDF 1149 KB] (384)
96806 Dong Bao-Juan, Yang Teng, Wang Ji-Zhang, Zhang Zhi-Dong
  Interface effect on structural and electronic properties of graphdiyne adsorbed on SiO2 and h-BN substrates: A first-principles study
    Chin. Phys. B   2015 Vol.24 (9): 96806-096806 [Abstract] (627) [HTML 1 KB] [PDF 811 KB] (452)
88504 Tang Lan-Feng, Yu Guang, Lu Hai, Wu Chen-Fei, Qian Hui-Min, Zhou Dong, Zhang Rong, Zheng You-Dou, Huang Xiao-Ming
  Influence of white light illumination on the performance of a-IGZO thin film transistor under positive gate-bias stress
    Chin. Phys. B   2015 Vol.24 (8): 88504-088504 [Abstract] (436) [HTML 1 KB] [PDF 398 KB] (946)
87304 Liu Xin-Yu, Wang Yi-Yu, Peng Zhao-Yang, Li Cheng-Zhan, Wu Jia, Bai Yun, Tang Yi-Dan, Liu Ke-An, Shen Hua-Jun
  Charge trapping behavior and its origin in Al2O3/SiC MIS system
    Chin. Phys. B   2015 Vol.24 (8): 87304-087304 [Abstract] (249) [HTML 1 KB] [PDF 520 KB] (278)
78502 Chen Hai-Feng, Guo Li-Xin, Zheng Pu-Yang, Dong Zhao, Zhang Qian
  Characteristics of drain-modulated generation current in n-type metal-oxide-semiconductor field-effect transistor
    Chin. Phys. B   2015 Vol.24 (7): 78502-078502 [Abstract] (366) [HTML 1 KB] [PDF 364 KB] (286)
78105 Shi Zhen-Liang, Ji Yun, Yu Wei, Yang Yan-Bin, Cong Ri-Dong, Chen Ying-Juan, Li Xiao-Wei, Fu Guang-Sheng
  Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer
    Chin. Phys. B   2015 Vol.24 (7): 78105-078105 [Abstract] (357) [HTML 1 KB] [PDF 662 KB] (321)
77307 Qian Hui-Min, Yu Guang, Lu Hai, Wu Chen-Fei, Tang Lan-Feng, Zhou Dong, Ren Fang-Fang, Zhang Rong, Zheng You-Liao, Huang Xiao-Ming
  Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors
    Chin. Phys. B   2015 Vol.24 (7): 77307-077307 [Abstract] (289) [HTML 1 KB] [PDF 552 KB] (457)
54301 Huang Ping-Ping, Yao Yuan-Wei, Wu Fu-Gen, Zhang Xin, Li Jing, Hu Ai-Zhen
  Interface-guided mode of Lamb waves in a two-dimensional phononic crystal plate
    Chin. Phys. B   2015 Vol.24 (5): 54301-054301 [Abstract] (361) [HTML 1 KB] [PDF 846 KB] (388)
37203 Li Qi, Li Hai-Ou, Tang Ning, Zhai Jiang-Hui, Song Shu-Xiang
  New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage
    Chin. Phys. B   2015 Vol.24 (3): 37203-037203 [Abstract] (286) [HTML 0 KB] [PDF 476 KB] (635)
37301 Du Yan-Ling, Wang Chun-Lei, Li Ji-Chao, Zhang Xin-Hua, Wang Fu-Ning, Liu Jian, Zhu Yuan-Hu, Yin Na, Mei Liang-Mo
  Two-dimensional metallic behavior at polar MgO/BaTiO3 (110) interfaces
    Chin. Phys. B   2015 Vol.24 (3): 37301-037301 [Abstract] (305) [HTML 0 KB] [PDF 793 KB] (513)
27301 Wang Pin-Zhi, Zhu Su-Hua, Pan Tao, Wu Yin-Zhong
  Influence of interface within the composite barrier on the tunneling electroresistance of ferroelectric tunnel junctions with symmetric electrodes
    Chin. Phys. B   2015 Vol.24 (2): 27301-027301 [Abstract] (343) [HTML 0 KB] [PDF 241 KB] (308)
16401 Ji Xiao-Jian, Chen Ming-Wen, Xu Xiao-Hua, Wang Zi-Dong
  Effect of far-field flow on a columnar crystal in the convective undercooled melt
    Chin. Phys. B   2015 Vol.24 (1): 16401-016401 [Abstract] (373) [HTML 0 KB] [PDF 401 KB] (380)
128502 Chen Hai-Feng
  Gate-modulated generation–recombination current in n-type metal–oxide–semiconductor field-effect transistor
    Chin. Phys. B   2014 Vol.23 (12): 128502-128502 [Abstract] (224) [HTML 1 KB] [PDF 368 KB] (390)
117304 Liang Bin, Chen Jian-Jun, Chi Ya-Qing
  Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET
    Chin. Phys. B   2014 Vol.23 (11): 117304-117304 [Abstract] (294) [HTML 1 KB] [PDF 527 KB] (463)
117703 Wen Xiao-Li, Chen Zhao, Lin Xin, Niu Li-Wei, Duan Meng-Meng, Zhang Yun-Jie, Dong Xiang-Lei, Chen Chang-Le
  Enhanced ferroelectricity and ferromagnetism in Bi0.9Ba0.1FeO3/La2/3Sr1/3MnO3 heterostructure grown by pulsed laser deposition
    Chin. Phys. B   2014 Vol.23 (11): 117703-117703 [Abstract] (187) [HTML 1 KB] [PDF 653 KB] (407)
118504 Yun Quan-Xin, Li Ming, An Xia, Lin Meng, Liu Peng-Qiang, Li Zhi-Qiang, Zhang Bing-Xin, Xia Yu-Xuan, Zhang Hao, Zhang Xing, Huang Ru, Wang Yang-Yuan
  Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor
    Chin. Phys. B   2014 Vol.23 (11): 118504-118504 [Abstract] (281) [HTML 1 KB] [PDF 586 KB] (736)
116802 Guo Shuo, Xiong Xiao-Min, Xu Zu-Li, Shen Ping, Tong Penger
  Measurement of the friction coefficient of a fluctuating contact line using an AFM-based dual-mode mechanical resonator
    Chin. Phys. B   2014 Vol.23 (11): 116802-116802 [Abstract] (350) [HTML 1 KB] [PDF 622 KB] (357)
117803 Wang Wei-Ying, Liu Gui-Peng, Jin Peng, Mao De-Feng, Li Wei, Wang Zhan-Guo, Tian Wu, Chen Chang-Qing
  Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells
    Chin. Phys. B   2014 Vol.23 (11): 117803-117803 [Abstract] (202) [HTML 1 KB] [PDF 272 KB] (452)
106803 Xiao Xia, Tao Ye, Sun Yuan
  Influence of roughness on the detection of mechanical characteristics of low-k film by the surface acoustic waves
    Chin. Phys. B   2014 Vol.23 (10): 106803-106803 [Abstract] (153) [HTML 1 KB] [PDF 262 KB] (369)
106802 He Xiao-Min, Chen Zhi-Ming, Pu Hong-Bin, Li Lian-Bi, Huang Lei
  First-principles calculations on Si (220) located 6H-SiC (1010) surface with different stacking sites
    Chin. Phys. B   2014 Vol.23 (10): 106802-106802 [Abstract] (146) [HTML 1 KB] [PDF 900 KB] (596)
94502 Liu Wan-Hai, Yu Chang-Ping, Ye Wen-Hua, Wang Li-Feng
  Nonlinear saturation amplitude of cylindrical Rayleigh–Taylor instability
    Chin. Phys. B   2014 Vol.23 (9): 94502-094502 [Abstract] (151) [HTML 1 KB] [PDF 271 KB] (345)
86801 Ma Wei, Zhang Fan, Meng Sheng
  Dye-sensitized solar cells:Atomic scale investigation of interface structure and dynamics
    Chin. Phys. B   2014 Vol.23 (8): 86801-086801 [Abstract] (237) [HTML 1 KB] [PDF 1667 KB] (846)
87307 Li Yong, Wang Ling-Li, Wang Xiao-Bo, Yan Ling-Ling, Su Li-Xia, Tian Yong-Tao, Li Xin-Jian
  Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction
    Chin. Phys. B   2014 Vol.23 (8): 87307-087307 [Abstract] (293) [HTML 1 KB] [PDF 689 KB] (400)
87302 Du Yan-Ling, Wang Chun-Lei, Li Ji-Chao, Xu Pan-Pan, Zhang Xin-Hua, Liu Jian, Su Wen-Bin, Mei Liang-Mo
  Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures
    Chin. Phys. B   2014 Vol.23 (8): 87302-087302 [Abstract] (219) [HTML 1 KB] [PDF 753 KB] (449)
77301 Tang Fu-Ling, Liu Ran, Xue Hong-Tao, Lu Wen-Jiang, Feng Yu-Dong, Rui Zhi-Yuan, Huang Min
  Lattice structures and electronic properties of CIGS/CdS interface:First-principles calculations
    Chin. Phys. B   2014 Vol.23 (7): 77301-077301 [Abstract] (236) [HTML 1 KB] [PDF 763 KB] (1200)
77901 Song Juan, Ye Jun-Yi, Qian Meng-Di, Luo Fang-Fang, Lin Xian, Bian Hua-Dong, Dai Ye, Ma Guo-Hong, Chen Qing-Xi, Jiang Yan, Zhao Quan-Zhong, Qiu Jian-Rong
  Self-organized voids revisited:Experimental verification of the formation mechanism
    Chin. Phys. B   2014 Vol.23 (7): 77901-077901 [Abstract] (194) [HTML 1 KB] [PDF 1303 KB] (376)
64601 Zhong Zhi-Peng, He Yu-Bo, Wan Shui
  Analysis of composite material interface crack face contact and friction effects using a new node-pairs contact algorithm
    Chin. Phys. B   2014 Vol.23 (6): 64601-064601 [Abstract] (246) [HTML 1 KB] [PDF 883 KB] (357)
67101 Hu Sheng-Dong, Wu Xing-He, Zhu Zhi, Jin Jing-Jing, Chen Yin-Hui
  Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer
    Chin. Phys. B   2014 Vol.23 (6): 67101-067101 [Abstract] (226) [HTML 1 KB] [PDF 1752 KB] (593)
66802 Chen Shi-Yang, Wu Zhen-Wei, Liu Kai-Xin
  Atomic diffusion across Ni50Ti50–Cu explosive welding interface:Diffusion layer thickness and atomic concentration distribution
    Chin. Phys. B   2014 Vol.23 (6): 66802-066802 [Abstract] (248) [HTML 1 KB] [PDF 904 KB] (469)
56801 Song Chi, Li Dong-Dong, Xu Yi-Chun, Pan Bi-Cai, Liu Chang-Song, Wang Zhi-Guang
  Corrosion related properties of iron (100) surface in liquid lead and bismuth environments:A first-principles study
    Chin. Phys. B   2014 Vol.23 (5): 56801-056801 [Abstract] (161) [HTML 1 KB] [PDF 492 KB] (292)
57304 Zhang Yue, Zhuo Qing-Qing, Liu Hong-Xia, Ma Xiao-Hua, Hao Yue
  Flat-roof phenomenon of dynamic equilibrium phase in the negative bias temperature instability effect on a power MOSFET
    Chin. Phys. B   2014 Vol.23 (5): 57304-057304 [Abstract] (207) [HTML 1 KB] [PDF 303 KB] (352)
47504 Zhu Tao
  Anomalous Hall effect in perpendicular CoFeB thin films
    Chin. Phys. B   2014 Vol.23 (4): 47504-047504 [Abstract] (455) [HTML 1 KB] [PDF 2054 KB] (2523)
57301 Liao Xue-Yang, Zhang Kai, Zeng Chang, Zheng Xue-Feng, En Yun-Fei, Lai Ping, Hao Yue
  Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique
    Chin. Phys. B   2014 Vol.23 (5): 57301-057301 [Abstract] (249) [HTML 1 KB] [PDF 386 KB] (859)
30202 Zhao Ying-Xin, Zeng Xin, Chen Chang-Ping
  Elastic behavior of disclination dipole near nanotube with surface/interface effect
    Chin. Phys. B   2014 Vol.23 (3): 30202-030202 [Abstract] (217) [HTML 1 KB] [PDF 761 KB] (456)
26802 Liu Hai-Long, Liu Yan, Wang Tao, Ao Zhi-Min
  AA bilayer graphene on Si-terminated SiO2 under electric field
    Chin. Phys. B   2014 Vol.23 (2): 26802-026802 [Abstract] (212) [HTML 1 KB] [PDF 861 KB] (449)
23402 Li Shao-Sheng, Wang De-Hua
  Control of the photodetachment of H- near a metallic sphere surface by an elastic interface
    Chin. Phys. B   2014 Vol.23 (2): 23402-023402 [Abstract] (189) [HTML 1 KB] [PDF 533 KB] (416)
127301 Xie Yan-Wu, Hwang Harold Y
  Tuning the electrons at the LaAlO3/SrTiO3 interface:From growth to beyond growth
    Chin. Phys. B   2013 Vol.22 (12): 127301-127301 [Abstract] (513) [HTML 1 KB] [PDF 1831 KB] (1894)
126802 Zhang Cai-Li, Han Pei-De, Wang Xiao-Hong, Zhang Zhu-Xia, Wang Li-Ping, Xu Hui-Xia
  Tensile properties of phase interfaces in Mg–Li alloy:A first principles study
    Chin. Phys. B   2013 Vol.22 (12): 126802-126802 [Abstract] (298) [HTML 1 KB] [PDF 349 KB] (515)
117701 Han Kai, Wang Xiao-Lei, Yang Hong, Wang Wen-Wu
  Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO2 dielectric
    Chin. Phys. B   2013 Vol.22 (11): 117701-117701 [Abstract] (240) [HTML 1 KB] [PDF 250 KB] (637)
117311 Zhang Yue, Pu Shi, Lei Xiao-Yi, Chen Qing, Ma Xiao-Hua, Hao Yue
  Effects of stress conditions on the generation of negative bias temperature instability-associated interface traps
    Chin. Phys. B   2013 Vol.22 (11): 117311-117311 [Abstract] (182) [HTML 1 KB] [PDF 402 KB] (345)
117301 Ye Wei-Guo, Liu Dan, Peng Xiao-Feng, Dou Wei-Dong
  Interfacial electronic structure at a metal–phthalocyanine/graphene interface:Copper–phthalocyanine versus iron–phthalocyanine
    Chin. Phys. B   2013 Vol.22 (11): 117301-117301 [Abstract] (239) [HTML 1 KB] [PDF 361 KB] (1463)
116805 Chen Ming-Wen, Wang Bao, Wang Zi-Dong
  Effect of buoyancy-driven convection on steady state dendritic growth in a binary alloy
    Chin. Phys. B   2013 Vol.22 (11): 116805-116805 [Abstract] (213) [HTML 1 KB] [PDF 1394 KB] (393)
116803 Chen Yun-Zhong, Nini Pryds, Sun Ji-Rong, Shen Bao-Gen, Søren Linderoth
  High-mobility two-dimensional electron gases at oxide interfaces:Origin and opportunities
    Chin. Phys. B   2013 Vol.22 (11): 116803-116803 [Abstract] (368) [HTML 1 KB] [PDF 1772 KB] (1406)
97202 Yang Wen-Min, Lin Chao-Jing, Liao Jian, Li Yong-Qing
  Electrostatic field effects on three-dimensional topological insulators
    Chin. Phys. B   2013 Vol.22 (9): 97202-097202 [Abstract] (472) [HTML 1 KB] [PDF 1303 KB] (949)
98104 Chen Ming-Wen, Wang Zi-Dong
  Interface evolution of a particle in a supersaturated solution affected by a far-field uniform flow
    Chin. Phys. B   2013 Vol.22 (9): 98104-098104 [Abstract] (287) [HTML 1 KB] [PDF 301 KB] (351)
76701 Liu Chen, Zhang Yu-Ming, Zhang Yi-Men, Lü Hong-Liang
  Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor
    Chin. Phys. B   2013 Vol.22 (7): 76701-076701 [Abstract] (280) [HTML 1 KB] [PDF 287 KB] (1268)
47505 Li Peng, Jin Chao, Mi Wen-Bo, Bai Hai-Li
  Reactively sputtered Fe3O4-based films for spintronics
    Chin. Phys. B   2013 Vol.22 (4): 47505-047505 [Abstract] (343) [HTML 1 KB] [PDF 2911 KB] (1426)
47303 H. M. Baran, A. Tataroğlu
  Determination of interface states and their time constant for Au/SnO2/n-Si (MOS) capacitors using admittance measurements
    Chin. Phys. B   2013 Vol.22 (4): 47303-047303 [Abstract] (343) [HTML 1 KB] [PDF 884 KB] (1767)
27104 Liu Wei, Liu Xiong-Hua, Cui Wei-Bin, Gong Wen-Jie, Zhang Zhi-Dong
  Exchange couplings in magnetic films
    Chin. Phys. B   2013 Vol.22 (2): 27104-027104 [Abstract] (857) [HTML 1 KB] [PDF 2456 KB] (2117)
17301 Hu Bo, Huang Shi-Hua, Wu Feng-Min
  Modeling of tunneling current in ultrathin MOS structure with interface trap charge and fixed oxide charge
    Chin. Phys. B   2013 Vol.22 (1): 17301-017301 [Abstract] (484) [HTML 0 KB] [PDF 309 KB] (1326)
107305 Gu Cheng-Yan, Liu Gui-Peng, Shi Kai, Song Ya-Feng, Li Cheng-Ming, Liu Xiang-Lin, Yang Shao-Yan, Zhu Qin-Sheng, Wang Zhan-Guo
  Spacer layer thickness fluctuation scattering in a modulation-doped AlxGa1-xAs/GaAs/AlxGa1-xAs quantum well
    Chin. Phys. B   2012 Vol.21 (10): 107305-107305 [Abstract] (671) [HTML 1 KB] [PDF 137 KB] (530)
107304 Zhang Ting, Bai Ying, Jia Cai-Hong, Zhang Wei-Feng
  Interface-related switching behaviors of amorphous Pr0.67Sr0.33MnO3-based memory cells
    Chin. Phys. B   2012 Vol.21 (10): 107304-107304 [Abstract] (651) [HTML 1 KB] [PDF 1372 KB] (665)
106802 Chen Ming-Wen, He Guo-Wei, Chen Xiu-Yue, Wang Zi-Dong
  Interfacial evolution of a spherical particle in a uniaximal straining flow
    Chin. Phys. B   2012 Vol.21 (10): 106802-106802 [Abstract] (827) [HTML 1 KB] [PDF 134 KB] (492)
86401 Cao Bin, Lin Xin, Wang Meng, Huang Wei-Dong
  The effect of two-dimensional shear flow on the stability of a crystal interface in the supercooled melt
    Chin. Phys. B   2012 Vol.21 (8): 86401-086401 [Abstract] (768) [HTML 1 KB] [PDF 172 KB] (507)
77101 Zhang Wen-Tong, Wu Li-Juan, Qiao Ming, Luo Xiao-Rong, Zhang Bo, Li Zhao-Ji
  Novel high-voltage power lateral MOSFET with adaptive buried electrodes
    Chin. Phys. B   2012 Vol.21 (7): 77101-077101 [Abstract] (1045) [HTML 1 KB] [PDF 1101 KB] (636)
67201 Ji Dong, Liu Bing, Lü Yan-Wu, Zou Miao, Fan Bo-Ling
  Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors
    Chin. Phys. B   2012 Vol.21 (6): 67201-067201 [Abstract] (923) [HTML 1 KB] [PDF 138 KB] (756)
66801 Wang Li-Lin, Wang Zhi-Jun, Lin Xin, Wang Meng, Huang Wei-Dong
  The effect of interfacial energy anisotropy on planar interface instability in a succinonitrile alloy under a small temperature gradient
    Chin. Phys. B   2012 Vol.21 (6): 66801-066801 [Abstract] (975) [HTML 1 KB] [PDF 172 KB] (593)
56401 Cao Bin,Lin Xin,Wang Meng,Huang Wei-Dong
  Linear stability analysis on a spherical particle growing from a binary melt under the far-field flow
    Chin. Phys. B   2012 Vol.21 (5): 56401-056401 [Abstract] (939) [HTML 1 KB] [PDF 191 KB] (526)
36801 Zhang Yu-Yang,Du Shi-Xuan,Gao Hong-Jun
  Electronic structures and vibrational properties of coronene on Ru(0001): first-principles study
    Chin. Phys. B   2012 Vol.21 (3): 36801-036801 [Abstract] (865) [HTML 1 KB] [PDF 333 KB] (1168)
33601 Zhang Lin,Wang Shao-Qing,Chen Nan-Xian
  A molecular dynamics study of the structural change differences between Au225 and Au369 clusters on MgO surfaces at low temperature
    Chin. Phys. B   2012 Vol.21 (3): 33601-033601 [Abstract] (952) [HTML 1 KB] [PDF 398 KB] (634)
47301 Zhang Ting,Ding Ling-Hong,Zhang Wei-Feng
  Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories
    Chin. Phys. B   2012 Vol.21 (4): 47301-047301 [Abstract] (1051) [HTML 1 KB] [PDF 559 KB] (894)
27101 Hu Sheng-Dong,Wu Li-Juan,Zhou Jian-Lin,Gan Ping,Zhang Bo,Li Zhao-Ji
  Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer
    Chin. Phys. B   2012 Vol.21 (2): 27101-027101 [Abstract] (864) [HTML 1 KB] [PDF 580 KB] (623)
76102 Fan Tian-You, Xie Ling-Yun, Fan Lei, Wang Qing-Zhao
  Interface of quasicrystal and crystal
    Chin. Phys. B   2011 Vol.20 (7): 76102-076102 [Abstract] (1022) [HTML 0 KB] [PDF 877 KB] (709)
73201 Huang Kai-Yun, Wang De-Hua
  The influence of interface modifier on photodetachment of negative ions in an electric field near a metal surface
    Chin. Phys. B   2011 Vol.20 (7): 73201-073201 [Abstract] (924) [HTML 0 KB] [PDF 203 KB] (696)
50202 Wang An-Qi, Guo Li-Xin, Chai Cao
  Electromagnetic scattering from two-layered rough interfaces with a PEC object: vertical polarization
    Chin. Phys. B   2011 Vol.20 (5): 50202-050202 [Abstract] (1085) [HTML 0 KB] [PDF 373 KB] (787)
27101 Wu Li-Juan, Hu Sheng-Dong, Zhang Bo, Li Zhao-Ji
  Novel high-voltage power device based on self-adaptive interface charge
    Chin. Phys. B   2011 Vol.20 (2): 27101-027101 [Abstract] (1038) [HTML 0 KB] [PDF 1220 KB] (845)
25201 Yang Yan, Li Sheng-Tao, Ding Can, Cheng Peng-Fei
  Electronic relaxation of deep bulk trap and interface state in ZnO ceramics
    Chin. Phys. B   2011 Vol.20 (2): 25201-025201 [Abstract] (1090) [HTML 0 KB] [PDF 697 KB] (1358)
107101 Wu Li-Juan, Hu Sheng-Dong, Luo Xiao-Rong, Zhang Bo, Li Zhao-Ji
  Partial-SOI high voltage P-channel LDMOS with interface accumulation holes
    Chin. Phys. B   2011 Vol.20 (10): 107101-107101 [Abstract] (1117) [HTML 0 KB] [PDF 376 KB] (823)
18102 He Ji-Fang, Niu Zhi-Chuan, Chang Xiu-Ying, Ni Hai-Qiao, Zhu Yan, Li Mi-Feng, Shang Xiang-Jun
  Molecular beam epitaxy growth of GaAs on an offcut Ge substrate
    Chin. Phys. B   2011 Vol.20 (1): 18102-018102 [Abstract] (1175) [HTML 0 KB] [PDF 6465 KB] (2262)
97106 Wang Shou-Guo, Zhang Yi-Men, Zhang Yu-Ming
  Parameter analysis for gate metal–oxide–semiconductor structures of ion-implanted 4H silicon carbide metal–semiconductor field-effect transistors
    Chin. Phys. B   2010 Vol.19 (9): 97106-097106 [Abstract] (1067) [HTML 0 KB] [PDF 486 KB] (616)
94101 Bao Jin, Liang Xi-Xia
  Interface phonon–polaritons in quantum well systems of polar ternary mixed crystals
    Chin. Phys. B   2010 Vol.19 (9): 94101-094101 [Abstract] (999) [HTML 0 KB] [PDF 1167 KB] (621)
87201 Pang Fei, Liang Xue-Jin, Liao Zhao-Liang, Yin Shu-Li, Chen Dong-Min
  Origin of the metallic to insulating transition of an epitaxial Bi(111) film grown on Si(111)
    Chin. Phys. B   2010 Vol.19 (8): 87201-087201 [Abstract] (1493) [HTML 0 KB] [PDF 191 KB] (943)
78101 Wang Zhi-Jun, Wang Jin-Cheng, Yang Gen-Cang
  Discussions on the non-equilibrium effects in the quantitative phase field model of binary alloys
    Chin. Phys. B   2010 Vol.19 (7): 78101-078101 [Abstract] (993) [HTML 0 KB] [PDF 138 KB] (647)
67102 Zhang You-Run, Zhang Bo, Li Zhao-Ji, Deng Xiao-Chuan
  Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor
    Chin. Phys. B   2010 Vol.19 (6): 67102-067102 [Abstract] (1388) [HTML 0 KB] [PDF 515 KB] (950)
57304 Du Gang, Liu Xiao-Yan, Xia Zhi-Liang, Yang Jing-Feng, Han Ru-Qi
  Effect of interface roughness on the carrier transport in germanium MOSFETs investigated by Monte Carlo method
    Chin. Phys. B   2010 Vol.19 (5): 57304-057304 [Abstract] (975) [HTML 0 KB] [PDF 289 KB] (621)
48702 Tong Chao-Hui, Zhu Yue-Jin
  Finite size effect of ions and dipoles close to charged interfaces
    Chin. Phys. B   2010 Vol.19 (4): 48702-048702 [Abstract] (896) [HTML 0 KB] [PDF 331 KB] (588)
37303 Hu Sheng-Dong, Zhang Bo, Li Zhao-Ji, Luo Xiao-Rong
  A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device
    Chin. Phys. B   2010 Vol.19 (3): 37303-037303 [Abstract] (1384) [HTML 0 KB] [PDF 1758 KB] (1236)
26601 Cao Bo, Jia Yan-Hui, Li Gong-Ping, Chen Xi-Meng
  Atomic diffusion in annealed Cu/SiO2/Si (100) system prepared by magnetron sputtering
    Chin. Phys. B   2010 Vol.19 (2): 26601-026601 [Abstract] (1252) [HTML 0 KB] [PDF 397 KB] (2503)
128204 Xu Run, Gong Wei-Ming, Yan Zhi-Jun, Wang Lin-Jun, Xia Yi-Ben
  Thermal stability of HfO2/Si (001) films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen
    Chin. Phys. B   2010 Vol.19 (12): 128204-128204 [Abstract] (845) [HTML 0 KB] [PDF 224 KB] (646)
17304 Yun Da-Qin, Feng Wei, Wu Hong-Cai, Liu Xiao-Zeng, Qiang Jun-Feng
  Optical properties of conjugated polymer-ZnSe nanocrystal nanocomposites
    Chin. Phys. B   2010 Vol.19 (1): 17304-017304 [Abstract] (1149) [HTML 0 KB] [PDF 2915 KB] (933)
3952 Ocak Y, Akbulut S, Ke?lio?lu K, Mara?li N, Cad1rl1 E, Kaya H
  Experimental determination of interfacial energies for Ag2Al solid solution in the CuAl2--Ag2Al system
    Chin. Phys. B   2009 Vol.18 (9): 3952-3959 [Abstract] (1159) [HTML 0 KB] [PDF 1888 KB] (957)
1691 Chen Ming-Wen, Lan Man, Yuan Lin, Wang Yu-Yan, Wang Zi-Dong, Xu Jian-Jun
  The effect of anisotropic surface tension on the morphological stability of planar interface during directional solidification
    Chin. Phys. B   2009 Vol.18 (4): 1691-1699 [Abstract] (1021) [HTML 1 KB] [PDF 371 KB] (612)
1674 Li Gui-Jun, Hou Guo-Fu, Han Xiao-Yan, Yuan Yu-Jie, Wei Chang-Chun, Sun Jian, Zhao Yin, Geng Xin-Hua
  The study of a new n/p tunnel recombination junction and its application in a-Si:H/μc-Si:H tandem solar cells
    Chin. Phys. B   2009 Vol.18 (4): 1674-1678 [Abstract] (1137) [HTML 1 KB] [PDF 185 KB] (908)
1614 Liu Fang, Wang Tao, Shen Bo, Huang Sen, Lin Fang, Ma Nan, Xu Fu-Jun, Wang Peng, Yao Jian-Quan
  The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact
    Chin. Phys. B   2009 Vol.18 (4): 1614-1617 [Abstract] (1134) [HTML 1 KB] [PDF 171 KB] (808)
5479 Hu Shi-Gang, Hao Yue, Ma Xiao-Hua, Cao Yan-Rong, Chen Chi, Wu Xiao-Feng
  Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature
    Chin. Phys. B   2009 Vol.18 (12): 5479-5484 [Abstract] (1093) [HTML 0 KB] [PDF 169 KB] (942)
2689 Zhang Jin-Feng, Mao Wei, Zhang Jin-Cheng, Hao Yue
  The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures
    Chin. Phys. B   2008 Vol.17 (7): 2689-2695 [Abstract] (1206) [HTML 0 KB] [PDF 743 KB] (1216)
2655 Shi Si-Qi, Tanaka Shingo, Kohyama Masanori
  Effect of the stoichiometry on the electronic structure of the Ni(111)/ɑ-Al2O3(0001) interface: a first-principles investigation
    Chin. Phys. B   2008 Vol.17 (7): 2655-2661 [Abstract] (906) [HTML 0 KB] [PDF 265 KB] (672)
2646 Wang Chun-Lei, Li Zhao-Xia, Li Jing-Yuan, Xiu Peng, Hu Jun, Fang Hai-Ping
  High density gas state at water/graphite interface studied by molecular dynamics simulation
    Chin. Phys. B   2008 Vol.17 (7): 2646-2654 [Abstract] (1392) [HTML 0 KB] [PDF 3706 KB] (1310)
1817 Huang Wei-Qi, Xu Li, Wang Hai-Xu, Jin Feng, Wu Ke-Yue, Liu Shi-Rong, Qin Cao-Jian, Qin Shui-Jie
  Stimulated photoluminescence emission and trap states in Si/SiO2 interface formed by irradiation of laser
    Chin. Phys. B   2008 Vol.17 (5): 1817-1820 [Abstract] (777) [HTML 0 KB] [PDF 523 KB] (633)
4305 Wang Jun, Hao Lei
  Interface dipole induced by asymmetric exchange effect in Mott-insulator/Mott-insulator heterojunction
    Chin. Phys. B   2008 Vol.17 (11): 4305-4311 [Abstract] (952) [HTML 0 KB] [PDF 523 KB] (510)
3856 Wang Shao-Qing, Ma Shang-Yi
  Characterization of Ag adsorption on TiC(001) substrate: an ab initio study
    Chin. Phys. B   2008 Vol.17 (10): 3856-3866 [Abstract] (869) [HTML 0 KB] [PDF 1288 KB] (515)
1445 Liu Hong-Xia, Li Zhong-He, Hao Yue
  Degradation characteristics and mechanism of PMOSFETs under NBT--PBT--NBT stress
    Chin. Phys. B   2007 Vol.16 (5): 1445-1449 [Abstract] (1075) [HTML 0 KB] [PDF 458 KB] (815)
1140 Cao Yan-Rong, Ma Xiao-Hua, Hao Yue, Zhang Yue, Yu Lei, Zhu Zhi-Wei, Chen Hai-Feng
  Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs
    Chin. Phys. B   2007 Vol.16 (4): 1140-1144 [Abstract] (1195) [HTML 0 KB] [PDF 267 KB] (944)
725 Liu Shi-Rong, Qin Cao-Jian, Xu Li, Wu Ke-Yue, Cai Sao-Hong, Huang Wei-Qi
  Low-dimensional structures formed by irradiation of laser
    Chin. Phys. B   2007 Vol.16 (3): 725-729 [Abstract] (1039) [HTML 0 KB] [PDF 2028 KB] (775)
3820 Zhang Xue-Feng, Xu Jing-Ping, Lai Pui-To, Li Chun-Xia, Guan Jian-Guo
  Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
    Chin. Phys. B   2007 Vol.16 (12): 3820-3826 [Abstract] (986) [HTML 0 KB] [PDF 785 KB] (650)
1364 Ai Shu-Tao
  Paraelectric--ferroelectric interface dynamics induced by latent heat transfer and irreversibility of ferroelectric phase transitions
    Chin. Phys. B   2006 Vol.15 (6): 1364-1369 [Abstract] (1248) [HTML 0 KB] [PDF 216 KB] (585)
1310 Liao Yan-Ping, Shao Xi-Bin, Gao Feng-Li, Luo Wen-Sheng, Wu Yuan, Fu Guo-Zhu, Jing Hai, Ma Kai
  Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon
    Chin. Phys. B   2006 Vol.15 (6): 1310-1314 [Abstract] (1171) [HTML 0 KB] [PDF 468 KB] (653)
1101 Zhang Li
  Polar interface and surface optical vibration spectra in multi-layer wurtzite quantum wires:transfer matrix method
    Chin. Phys. B   2006 Vol.15 (5): 1101-1109 [Abstract] (1233) [HTML 0 KB] [PDF 319 KB] (557)
833 Li Zhong-He, Liu Hong-Xia, Hao Yue
  The role of hydrogen in negative bias temperature instability of pMOSFET
    Chin. Phys. B   2006 Vol.15 (4): 833-838 [Abstract] (1146) [HTML 0 KB] [PDF 312 KB] (1203)
610 Zhang Lin, Wang Shao-Qing, Ye Heng-Qiang
  Investigation on quenching at a high-angle Cu grain boundary on an atomic scale
    Chin. Phys. B   2006 Vol.15 (3): 610-617 [Abstract] (1021) [HTML 0 KB] [PDF 721 KB] (519)
460 Yan Xiao-Hong, Guo Zhao-Hui, Ding Shu-Long, Yang Yu-Rong, Xiao Yang, Xuan Kai
  The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance
    Chin. Phys. B   2006 Vol.15 (2): 460-465 [Abstract] (787) [HTML 0 KB] [PDF 0 KB] (169)
1644 Hawkins I. D., Peaker A. R., Liu Hong-Xia, Hao Yue
  Hot-carrier degradation characteristics and explanation in 0.25μm PMOSFETs
    Chin. Phys. B   2005 Vol.14 (8): 1644-1648 [Abstract] (869) [HTML 0 KB] [PDF 252 KB] (438)
1246 Ai Shu-Tao
  Dependence of interface motion on pressure in ferroelectrics
    Chin. Phys. B   2005 Vol.14 (6): 1246-1249 [Abstract] (635) [HTML 0 KB] [PDF 223 KB] (451)
1927 Diao Jia-Jie, Chen Guang-De, Qiu Fu-Sheng, Yan Guo-Jun
  Improved liquid-solid-gas interface deposition of nanoparticle thin films
    Chin. Phys. B   2004 Vol.13 (11): 1927-1930 [Abstract] (616) [HTML 0 KB] [PDF 10931 KB] (424)
315 Wang Cong, Wang Tian-Min
  Surface behaviour and undercooling in the liquid Ga-Bi binary system detected by optical second harmonic generation
    Chin. Phys. B   2003 Vol.12 (3): 315-321 [Abstract] (820) [HTML 0 KB] [PDF 237 KB] (445)
94 Wang Shou-Guo, Zhang Yi-Men, Zhang Yu-Ming
  Parameter extraction for a Ti/4H-SiC Schottky diode
    Chin. Phys. B   2003 Vol.12 (1): 94-96 [Abstract] (991) [HTML 0 KB] [PDF 216 KB] (578)
83 He De-Yan, K. A. McGreer
  Reduction of insertion loss after annealing of silicon oxynitride optical waveguides
    Chin. Phys. B   2002 Vol.11 (1): 83-86 [Abstract] (566) [HTML 0 KB] [PDF 297 KB] (460)
832 N. Froumin, M. Polak, Deng Xin-fa, Lu Hua, Shen Dian-hong, Xue Qi-kun
  STUDY OF THE Al/GRAPHITE INTERFACE
    Chin. Phys. B   2001 Vol.10 (9): 832-835 [Abstract] (840) [HTML 0 KB] [PDF 215 KB] (877)
189 Ren Hong-xia, Hao Yue
  HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS
    Chin. Phys. B   2001 Vol.10 (3): 189-193 [Abstract] (826) [HTML 0 KB] [PDF 257 KB] (501)
528 N. Froumin, M. Polak, Wu Xing-fang, Shen Dian-hong, Lu Hua
  MICROSTRUCTURE AT THE INTERFACE OF TITANIUM CARBIDE AND NICKEL ALUMINIDES
    Chin. Phys. B   2000 Vol.9 (7): 528-531 [Abstract] (748) [HTML 0 KB] [PDF 3483 KB] (540)
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