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Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor |
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A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design |
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Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator |
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions |
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An improved secondary electrons energy spectrum model and its application in multipactor discharge |
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Effect of aperture field distribution on the maximum radiated power at atmospheric pressure |
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Air breakdown induced by the microwave with two mutually orthogonal and heterophase electric field components |
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Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress |
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Effect of air breakdown on microwave pulse energy transmission |
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A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer |
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Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate |
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Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers |
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Laser-induced breakdown spectroscopy applied to the characterization of rock by support vector machine combined with principal component analysis |
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47102 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
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Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs |
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Chin. Phys. B
2016 Vol.25 (4): 47102-047102
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45101 |
Dan Cai(蔡丹), Lie Liu(刘列), Jin-Chuan Ju(巨金川), Xue-Long Zhao(赵雪龙), Hong-Yu Zhou(周泓宇), Xiao Wang(王潇) |
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Initiation of vacuum breakdown and failure mechanism of the carbon nanotube during thermal field emission |
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Chin. Phys. B
2016 Vol.25 (4): 45101-045101
[Abstract]
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27306 |
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉) |
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A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology |
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Chin. Phys. B
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[Abstract]
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28901 |
Xiao-Xia Yang(杨晓霞), Winnie Daamen, Serge Paul Hoogendoorn, Hai-Rong Dong(董海荣), Xiu-Ming Yao(姚秀明) |
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Dynamic feature analysis in bidirectional pedestrian flows |
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Chin. Phys. B
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[Abstract]
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[PDF 1349 KB]
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27303 |
Jun Luo(罗俊), Sheng-Lei Zhao(赵胜雷), Min-Han Mi(宓珉瀚), Wei-Wei Chen(陈伟伟), Bin Hou(侯斌), Jin-Cheng Zhang(张进成), Xiao-Hua Ma(马晓华), Yue Hao(郝跃) |
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Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor |
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Chin. Phys. B
2016 Vol.25 (2): 27303-027303
[Abstract]
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(934)
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17303 |
Wei Mao(毛维), Wei-Bo She(佘伟波), Cui Yang(杨翠), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Yue Hao(郝跃) |
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Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates |
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Chin. Phys. B
2016 Vol.25 (1): 17303-017303
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117306 |
Wang Yan-Rong (王艳蓉), Yang Hong (杨红), Xu Hao (徐昊), Wang Xiao-Lei (王晓磊), Luo Wei-Chun (罗维春), Qi Lu-Wei (祁路伟), Zhang Shu-Xiang (张淑祥), Wang Wen-Wu (王文武), Yan Jiang (闫江), Zhu Hui-Long (朱慧珑), Zhao Chao (赵超), Chen Da-Peng (陈大鹏), Ye Tian-Chun (叶甜春) |
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Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process |
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Chin. Phys. B
2015 Vol.24 (11): 117306-117306
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105102 |
Zhao Peng-Cheng (赵朋程), Guo Li-Xin (郭立新), Li Hui-Min (李慧敏) |
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Effect of microwave frequency on plasma formation in air breakdown at atmospheric pressure |
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Chin. Phys. B
2015 Vol.24 (10): 105102-105102
[Abstract]
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[PDF 391 KB]
(462)
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75203 |
Peng Shi-Xiang (彭士香), Zhang Ai-Lin (张艾霖), Ren Hai-Tao (任海涛), Zhang Tao (张滔), Xu Yuan (徐源), Zhang Jing-Feng (张景丰), Gong Jian-Hua (龚建华), Guo Zhi-Yu (郭之虞), Chen Jia-Er (陈佳洱) |
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Continuous operation of 2.45-GHz microwave proton source for 306 hours with more than 50 mA DC beam |
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Chin. Phys. B
2015 Vol.24 (7): 75203-075203
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47304 |
Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山) |
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An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer |
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Chin. Phys. B
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[Abstract]
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[PDF 618 KB]
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45101 |
Liu Xing-Jian (刘兴建), He Li-Ming (何立明), Yu Jin-Lu (于锦禄), Zhang Hua-Lei (张华磊) |
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Experimental investigation of effects of airflows on plasma-assisted combustion actuator characteristics |
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Chin. Phys. B
2015 Vol.24 (4): 45101-045101
[Abstract]
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37203 |
Li Qi (李琦), Li Hai-Ou (李海鸥), Tang Ning (唐宁), Zhai Jiang-Hui (翟江辉), Song Shu-Xiang (宋树祥) |
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New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage |
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Chin. Phys. B
2015 Vol.24 (3): 37203-037203
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38902 |
Wang Yang (王扬), Chen Yan-Yan (陈艳艳) |
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A new cellular automaton for signal controlled traffic flow based on driving behaviors |
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Chin. Phys. B
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28502 |
Zhang Jun (张珺), Guo Yu-Feng (郭宇锋), Xu Yue (徐跃), Lin Hong (林宏), Yang Hui (杨慧), Hong Yang (洪洋), Yao Jia-Fei (姚佳飞) |
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One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation |
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Chin. Phys. B
2015 Vol.24 (2): 28502-028502
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25101 |
Zhao Peng-Cheng (赵朋程), Liao Cheng (廖成), Feng Ju (冯菊) |
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Short-pulse high-power microwave breakdown at high pressures |
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Chin. Phys. B
2015 Vol.24 (2): 25101-025101
[Abstract]
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[PDF 360 KB]
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27101 |
Ma Xiao-Hua (马晓华), Zhang Ya-Man (张亚嫚), Wang Xin-Hua (王鑫华), Yuan Ting-Ting (袁婷婷), Pang Lei (庞磊), Chen Wei-Wei (陈伟伟), Liu Xin-Yu (刘新宇) |
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Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values |
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Chin. Phys. B
2015 Vol.24 (2): 27101-027101
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127303 |
Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) |
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A novel LDMOS with a junction field plate and a partial N-buried layer |
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Chin. Phys. B
2014 Vol.23 (12): 127303-127303
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128501 |
Hu Xia-Rong (胡夏融), Lü Rui (吕瑞) |
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An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS |
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Chin. Phys. B
2014 Vol.23 (12): 128501-128501
[Abstract]
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115101 |
Wang Hui-Hui (王辉辉), Liu Da-Gang (刘大刚), Liu La-Qun (刘腊群), Meng Lin (蒙林) |
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Microwave propagation with the gas breakdown |
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Chin. Phys. B
2014 Vol.23 (11): 115101-115101
[Abstract]
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[HTML 1 KB]
[PDF 506 KB]
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114402 |
Fu Qiang (付强), Zhang Wan-Rong (张万荣), Jin Dong-Yue (金冬月), Ding Chun-Bao (丁春宝), Zhao Yan-Xiao (赵彦晓), Lu Dong (鲁东) |
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Collector optimization for tradeoff between breakdown voltage and cut-off frequency in SiGe HBT |
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Chin. Phys. B
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[Abstract]
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
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[HTML 1 KB]
[PDF 1081 KB]
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77306 |
Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波) |
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A low specific on-resistance SOI LDMOS with a novel junction field plate |
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Chin. Phys. B
2014 Vol.23 (7): 77306-077306
[Abstract]
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[HTML 1 KB]
[PDF 451 KB]
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77304 |
Mi Min-Han (宓珉瀚), Zhang Kai (张凯), Chen Xing (陈兴), Zhao Sheng-Lei (赵胜雷), Wang Chong (王冲), Zhang Jin-Cheng (张进成), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage |
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Chin. Phys. B
2014 Vol.23 (7): 77304-077304
[Abstract]
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[HTML 1 KB]
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67101 |
Hu Sheng-Dong (胡盛东), Wu Xing-He (武星河), Zhu Zhi (朱志), Jin Jing-Jing (金晶晶), Chen Yin-Hui (陈银晖) |
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Partial-SOI high voltage laterally double-diffused MOS with a partially buried n+-layer |
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Chin. Phys. B
2014 Vol.23 (6): 67101-067101
[Abstract]
(590)
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57203 |
Wang Xiang-Dong (王向东), Deng Xiao-Chuan (邓小川), Wang Yong-Wei (王永维), Wang Yong (王勇), Wen Yi (文译), Zhang Bo (张波) |
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring |
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Chin. Phys. B
2014 Vol.23 (5): 57203-057203
[Abstract]
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[HTML 1 KB]
[PDF 498 KB]
(559)
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55101 |
Zhao Peng-Cheng (赵朋程), Liao Cheng (廖成), Yang Dan (杨丹), Zhong Xuan-Ming (钟选明) |
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Validity of the two-term Boltzmann approximation employed in the fluid model for high-power microwave breakdown in gas |
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Chin. Phys. B
2014 Vol.23 (5): 55101-055101
[Abstract]
(790)
[HTML 1 KB]
[PDF 437 KB]
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38503 |
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) |
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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer |
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Chin. Phys. B
2014 Vol.23 (3): 38503-038503
[Abstract]
(510)
[HTML 1 KB]
[PDF 749 KB]
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15201 |
Hilal Yucel Kurt |
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Exploration of the Townsend regime by discharge light emission in a gas discharge device |
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Chin. Phys. B
2014 Vol.23 (1): 15201-015201
[Abstract]
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[PDF 1285 KB]
(535)
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128503 |
Zhong Ying-Hui (钟英辉), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Wang Xian-Tai (王显泰), Lü Hong-Liang (吕红亮), Liu Xin-Yu (刘新宇), Jin Zhi (金智) |
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0.15-μm T-gate In0.52Al0.48As/In0.53Ga0.47As InP-based HEMT with fmax of 390 GHz |
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Chin. Phys. B
2013 Vol.22 (12): 128503-128503
[Abstract]
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[HTML 1 KB]
[PDF 1012 KB]
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118502 |
Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High-voltage SOI lateral MOSFET with a dual vertical field plate |
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Chin. Phys. B
2013 Vol.22 (11): 118502-118502
[Abstract]
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[HTML 1 KB]
[PDF 451 KB]
(736)
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97303 |
Zhang Kai (张凯), Cao Meng-Yi (曹梦逸), Lei Xiao-Yi (雷晓艺), Zhao Sheng-Lei (赵胜雷), Yang Li-Yuan (杨丽媛), Zheng Xue-Feng (郑雪峰), Ma Xiao-Hua (马晓华), Hao Yue (郝跃) |
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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs |
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Chin. Phys. B
2013 Vol.22 (9): 97303-097303
[Abstract]
(588)
[HTML 1 KB]
[PDF 354 KB]
(1699)
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97201 |
Deng Yong-Hui (邓永辉), Xie Gang (谢刚), Wang Tao (汪涛), Sheng Kuang (盛况) |
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A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain |
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Chin. Phys. B
2013 Vol.22 (9): 97201-097201
[Abstract]
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[HTML 1 KB]
[PDF 643 KB]
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67306 |
Zhou Kun (周坤), Luo Xiao-Rong (罗小蓉), Fan Yuan-Hang (范远航), Luo Yin-Chun (罗尹春), Hu Xia-Rong (胡夏融), Zhang Bo (张波) |
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS |
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Chin. Phys. B
2013 Vol.22 (6): 67306-067306
[Abstract]
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[HTML 1 KB]
[PDF 938 KB]
(774)
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68501 |
Wu Wei (伍伟), Zhang Bo (张波), Fang Jian (方健), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High voltage super-junction lateral double diffused metal-oxide semiconductor with partial lightly doped pillar |
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Chin. Phys. B
2013 Vol.22 (6): 68501-068501
[Abstract]
(629)
[HTML 1 KB]
[PDF 793 KB]
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58501 |
Hua Ting-Ting (花婷婷), Guo Yu-Feng (郭宇锋), Yu Ying (于映), Gene Sheu, Jian Tong (蹇彤), Yao Jia-Fei (姚佳飞) |
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Analytical models of lateral power devices with arbitrary vertical doping profiles in drift region |
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Chin. Phys. B
2013 Vol.22 (5): 58501-058501
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[PDF 912 KB]
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48501 |
Fan Jie (范杰), Wang Zhi-Gang (汪志刚), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉) |
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Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance |
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Chin. Phys. B
2013 Vol.22 (4): 48501-048501
[Abstract]
(785)
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47701 |
Zheng Zhi (郑直), Li Wei (李威), Li Ping (李平) |
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Non-depletion floating layer in SOI LDMOS for enhancing breakdown voltage and eliminating back-gate bias effect |
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Chin. Phys. B
2013 Vol.22 (4): 47701-047701
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(791)
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44206 |
Liu Jia (刘佳), Tao Hai-Yan (陶海岩), Gao Xun (高勋), Hao Zuo-Qiang (郝作强), Lin Jing-Quan (林景全) |
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Polarization characteristics of single shot nanosecond laser induced breakdown spectroscopy of Al |
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Chin. Phys. B
2013 Vol.22 (4): 44206-044206
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[HTML 1 KB]
[PDF 666 KB]
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35203 |
Guo Kai-Min (郭凯敏), Hao Zuo-Qiang (郝作强), Lin Jing-Quan (林景全), Sun Chang-Kai (孙长凯), Gao Xun (高勋), Zhao Zhen-Ming (赵振明) |
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Comparative investigation of resistance and ability to trigger high voltage discharge for single and multiple femtosecond filaments in air |
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Chin. Phys. B
2013 Vol.22 (3): 35203-035203
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[PDF 274 KB]
(492)
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27303 |
Luo Xiao-Rong (罗小蓉), Wang Qi (王琦), Yao Guo-Liang (姚国亮), Wang Yuan-Gang (王元刚), Lei Tian-Fei (雷天飞), Wang Pei (王沛), Jiang Yong-Heng (蒋永恒), Zhou Kun (周坤), Zhang Bo (张波) |
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A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch |
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Chin. Phys. B
2013 Vol.22 (2): 27303-027303
[Abstract]
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(833)
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27305 |
Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) |
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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench |
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Chin. Phys. B
2013 Vol.22 (2): 27305-027305
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26103 |
Xie Gang (谢刚), Tang Cen (汤岑), Wang Tao (汪涛), Guo Qing (郭清), Zhang Bo (张波), Sheng Kuang (盛况), Wai Tung Ng |
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An AlGaN/GaN HEMT with enhanced breakdown and near-zero breakdown voltage temperature coefficient |
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Chin. Phys. B
2013 Vol.22 (2): 26103-026103
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[PDF 1199 KB]
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27304 |
Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤) |
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A low specific on-resistance SOI MOSFET with dual gates and recessed drain |
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Chin. Phys. B
2013 Vol.22 (2): 27304-027304
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[PDF 684 KB]
(731)
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14209 |
Nakimana Agnes, Tao Hai-Yan (陶海岩), Hao Zuo-Qiang (郝作强), Sun Chang-Kai (孙长凯), Gao Xun (高勋), Lin Jing-Quan (林景全) |
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A comparison of single shot nanosecond and femtosecond polarization-resolved laser-induced breakdown spectroscopy of Al |
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Chin. Phys. B
2013 Vol.22 (1): 14209-014209
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128503 |
Wang Ying (王颖), Li Ting (李婷), Cao Fei (曹菲), Shao Lei (邵雷), Chen Yu-Xian (陈宇贤) |
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Junction barrier Schottky rectifier with improved P-well region |
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Chin. Phys. B
2012 Vol.21 (12): 128503-128503
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128501 |
Kong Xin (孔欣), Wei Ke (魏珂), Liu Guo-Guo (刘果果), Liu Xin-Yu (刘新宇) |
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Improvement of breakdown characteristics of AlGaN/GaN HEMT with U-type gate foot for millimeter-wave power application |
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Chin. Phys. B
2012 Vol.21 (12): 128501-128501
[Abstract]
(1128)
[HTML 1 KB]
[PDF 641 KB]
(2098)
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108502 |
Qiao Ming (乔明), Zhuang Xiang (庄翔), Wu Li-Juan (吴丽娟), Zhang Wen-Tong (章文通), Wen Heng-Juan (温恒娟), Zhang Bo (张波), Li Zhao-Ji (李肇基) |
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Breakdown voltage model and structure realization of a thin silicon layer with linear variable doping on a silicon on insulator high voltage device with multiple step field plates |
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Chin. Phys. B
2012 Vol.21 (10): 108502-108502
[Abstract]
(1003)
[HTML 1 KB]
[PDF 2606 KB]
(1575)
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87402 |
Liu Qiao-Jun (刘巧君), S. K. Fong (冯瑞权), Andrew Y. S. Cheng (郑玉臣), Luo Shi-Rong (罗时荣), K. S. Tam (谭建成), Zhu Jian-Hua (朱建华), A. Viseu (冼保生) |
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High-sensitive automatic transient laser-induced breakdown spectroscopy system with high temporal and spatial resolution |
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Chin. Phys. B
2012 Vol.21 (8): 87402-087402
[Abstract]
(1218)
[HTML 1 KB]
[PDF 442 KB]
(672)
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
| |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
(1383)
[HTML 1 KB]
[PDF 907 KB]
(1218)
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86105 |
Xie Gang (谢刚), Edward Xu, Niloufar Hashemi, Zhang Bo (张波), Fred Y. Fu, Wai Tung Ng |
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An AlGaN/GaN HEMT with reduced surface electric field and an improved breakdown voltage |
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Chin. Phys. B
2012 Vol.21 (8): 86105-086105
[Abstract]
(1395)
[HTML 1 KB]
[PDF 1274 KB]
(1635)
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74204 |
Nakimana Agnes, Hao Zuo-Qiang(郝作强), Liu Jia(刘佳), Tao Hai-Yan(陶海岩), Gao Xun(高勋), Sun Chang-Kai(孙长凯), and Lin Jing-Quan(林景全) |
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The high dependence of polarization resolved laser-induced breakdown spectroscopy on experimental conditions |
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Chin. Phys. B
2012 Vol.21 (7): 74204-074204
[Abstract]
(1350)
[HTML 1 KB]
[PDF 804 KB]
(936)
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78502 |
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) |
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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS |
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Chin. Phys. B
2012 Vol.21 (7): 78502-078502
[Abstract]
(1447)
[HTML 1 KB]
[PDF 152 KB]
(1036)
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77101 |
Zhang Wen-Tong(章文通), Wu Li-Juan(吴丽娟), Qiao Ming(乔明) Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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Novel high-voltage power lateral MOSFET with adaptive buried electrodes |
| |
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Chin. Phys. B
2012 Vol.21 (7): 77101-077101
[Abstract]
(1360)
[HTML 1 KB]
[PDF 1101 KB]
(649)
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68504 |
Zhang Jin-Ping(张金平), Li Ze-Hong(李泽宏), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer |
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Chin. Phys. B
2012 Vol.21 (6): 68504-068504
[Abstract]
(1357)
[HTML 1 KB]
[PDF 801 KB]
(1099)
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68501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Zhang Zheng-Yuan(张正元), Jiang Yong-Heng(蒋永恒), Zhou Kun(周坤), Wang Pei(王沛), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), Zhang Yun-Xuan(张云轩), and Wei Jie(魏杰) |
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A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration |
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Chin. Phys. B
2012 Vol.21 (6): 68501-068501
[Abstract]
(1670)
[HTML 1 KB]
[PDF 297 KB]
(1686)
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55203 |
Wang Yi-Bo(王一博), Wang Shang-Wu(王尚武), and Zeng Xin-Wu(曾新吾) |
| |
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A theoretical estimation of the pre-breakdown-heating time in the underwater discharge acoustic source |
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Chin. Phys. B
2012 Vol.21 (5): 55203-055203
[Abstract]
(1331)
[HTML 1 KB]
[PDF 1102 KB]
(1037)
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37305 |
Zhuang Xiang(庄翔), Qiao Ming(乔明), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Analysis of the breakdown mechanism for an ultra high voltage high-side thin layer silicon-on-insulator p-channel lateral double-diffused metal oxide semiconductor |
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Chin. Phys. B
2012 Vol.21 (3): 37305-037305
[Abstract]
(1099)
[HTML 1 KB]
[PDF 1679 KB]
(24116)
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33102 |
Zhao Liang(赵亮), Su Jian-Cang(苏建仓), Pan Ya-Feng(潘亚峰), and Zhang Xi-Bo(张喜波) |
| |
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The effect of polymer type on electric breakdown strength on a nanosecond time scale |
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Chin. Phys. B
2012 Vol.21 (3): 33102-033102
[Abstract]
(1082)
[HTML 1 KB]
[PDF 137 KB]
(905)
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27101 |
Hu Sheng-Dong(胡盛东), Wu Li-Juan(吴丽娟), Zhou Jian-Lin(周建林), Gan Ping(甘平), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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Improvement on the breakdown voltage for silicon-on-insulator devices based on epitaxy-separation by implantation oxygen by a partial buried n+-layer |
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Chin. Phys. B
2012 Vol.21 (2): 27101-027101
[Abstract]
(1187)
[HTML 1 KB]
[PDF 580 KB]
(636)
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18501 |
Zhao Yuan-Yuan(赵远远), Qiao Ming(乔明), Wang Wei-Bin(王伟宾), Wang Meng(王猛), and Zhang Bo(张波) |
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The breakdown mechanism of a high-side pLDMOS based on a thin-layer silicon-on-insulator structure |
| |
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Chin. Phys. B
2012 Vol.21 (1): 18501-018501
[Abstract]
(1150)
[HTML 1 KB]
[PDF 410 KB]
(999)
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87304 |
Li Wei-Yi(李惟一), Ru Guo-Ping(茹国平), Jiang Yu-Long(蒋玉龙), and Ruan Gang(阮刚) |
| |
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Trapezoid mesa trench metal–oxide semiconductor barrier Schottky rectifier: an improved Schottky rectifier with better reverse characteristics |
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Chin. Phys. B
2011 Vol.20 (8): 87304-087304
[Abstract]
(1466)
[HTML 0 KB]
[PDF 7700 KB]
(2399)
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87101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), and Li Zhao-Ji(李肇基) |
| |
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A–188 V 7.2 Ω·mm2, P-channel high voltage device formed on an epitaxy-SIMOX substrate |
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Chin. Phys. B
2011 Vol.20 (8): 87101-087101
[Abstract]
(1486)
[HTML 1 KB]
[PDF 307 KB]
(745)
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77304 |
Wang Yuan-Gang(王元刚), Luo Xiao-Rong(罗小蓉), Ge Rui(葛锐), Wu Li-Juan(吴丽娟), Chen Xi（陈曦), Yao Guo-Liang(姚国亮), Lei Tian-Fei(雷天飞), Wang Qi(王琦), Fan Jie(范杰), and Hu Xia-Rong(胡夏融) |
| |
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Compound buried layer SOI high voltage device with a step buried oxide |
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Chin. Phys. B
2011 Vol.20 (7): 77304-077304
[Abstract]
(1411)
[HTML 0 KB]
[PDF 1859 KB]
(854)
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67102 |
Zhang Fa-Sheng (张发生), Li Xin-Ran (李欣然) |
| |
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Research on high-voltage 4H–SiC P–i–N diode with planar edge junction termination techniques |
| |
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Chin. Phys. B
2011 Vol.20 (6): 67102-067102
[Abstract]
(1392)
[HTML 1 KB]
[PDF 473 KB]
(1147)
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28501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Chen Xi(陈曦), Wang Qi(王琦), Ge Rui(葛瑞), and Florin Udrea |
| |
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Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch |
| |
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Chin. Phys. B
2011 Vol.20 (2): 28501-028501
[Abstract]
(1423)
[HTML 1 KB]
[PDF 1846 KB]
(2304)
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27101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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Novel high-voltage power device based on self-adaptive interface charge |
| |
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Chin. Phys. B
2011 Vol.20 (2): 27101-027101
[Abstract]
(1367)
[HTML 1 KB]
[PDF 1220 KB]
(872)
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128501 |
Ren Min(任敏), Li Ze-Hong(李泽宏), Liu Xiao-Long(刘小龙), Xie Jia-Xiong(谢加雄), Deng Guang-Min(邓光敏), and Zhang Bo(张波) |
| |
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A novel planar vertical double-diffused metal-oxide- semiconductor field-effect transistor with inhomogeneous floating islands |
| |
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Chin. Phys. B
2011 Vol.20 (12): 128501-128501
[Abstract]
(1288)
[HTML 1 KB]
[PDF 350 KB]
(1046)
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118401 |
Huang Jian-Hua(黄健华), Lü Hong-Liang(吕红亮), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门),Tang Xiao-Yan(汤晓燕), Chen Feng-Ping(陈丰平), and Song Qing-Wen(宋庆文) |
| |
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Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode |
| |
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Chin. Phys. B
2011 Vol.20 (11): 118401-118401
[Abstract]
(1474)
[HTML 0 KB]
[PDF 304 KB]
(1053)
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117202 |
Li Qi(李琦), Zhu Jin-Luan(朱金鸾),Wang Wei-Dong(王卫东), and Wei Xue-Ming(韦雪明) |
| |
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A novel thin drift region device with field limiting rings in substrate |
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Chin. Phys. B
2011 Vol.20 (11): 117202-117202
[Abstract]
(1358)
[HTML 0 KB]
[PDF 214 KB]
(664)
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107101 |
Wu Li-Juan(吴丽娟), Hu Sheng-Dong(胡盛东), Luo Xiao-Rong(罗小蓉), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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Partial-SOI high voltage P-channel LDMOS with interface accumulation holes |
| |
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Chin. Phys. B
2011 Vol.20 (10): 107101-107101
[Abstract]
(1581)
[HTML 1 KB]
[PDF 376 KB]
(852)
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87202 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) |
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region |
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Chin. Phys. B
2010 Vol.19 (8): 87202-087202
[Abstract]
(1821)
[HTML 0 KB]
[PDF 303 KB]
(884)
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77306 |
Luo Xiao-Rong (罗小蓉), Wang Yuan-Gang (王元刚), Deng Hao (邓浩), Florin Udrea |
| |
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A novel partial silicon on insulator high voltage LDMOS with low-k dielectric buried layer |
| |
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Chin. Phys. B
2010 Vol.19 (7): 77306-077306
[Abstract]
(1477)
[HTML 1 KB]
[PDF 4242 KB]
(988)
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47201 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), Guo Hui(郭辉), Li Zhi-Yun(李志云), and Wang Zhong-Xu(王中旭) |
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Influence of geometrical parameters on the behaviour of SiC merged PiN Schottky rectifiers with junction termination extension |
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Chin. Phys. B
2010 Vol.19 (4): 47201-047201
[Abstract]
(1461)
[HTML 1 KB]
[PDF 298 KB]
(692)
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40601 |
Shao Tao(邵涛), Zhang Cheng(章程), Long Kai-Hua(龙凯华), Wang Jue(王珏), Zhang Dong-Dong(张东东), and Yan Ping(严萍) |
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Measurement and control for a repetitive nanosecond-pulse breakdown experiment in polymer films |
| |
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Chin. Phys. B
2010 Vol.19 (4): 40601-040601
[Abstract]
(1470)
[HTML 1 KB]
[PDF 544 KB]
(1286)
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37303 |
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Luo Xiao-Rong(罗小蓉) |
| |
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A new structure and its analytical model for the vertical interface electric field of a partial-SOI high voltage device |
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Chin. Phys. B
2010 Vol.19 (3): 37303-037303
[Abstract]
(1722)
[HTML 1 KB]
[PDF 1758 KB]
(1252)
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664 |
Bao Xiao-Qing(包晓清), Ge Dao-Han(葛道晗), Zhang Sheng(张圣), Li Jin-Peng(李金鹏), Zhou Ping(周萍), Jiao Ji-Wei(焦继伟), and Wang Yue-Lin(王跃林) |
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Fast pore etching on high resistivity n-type silicon via photoelectrochemistry |
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Chin. Phys. B
2009 Vol.18 (2): 664-670
[Abstract]
(1011)
[HTML 1 KB]
[PDF 6966 KB]
(511)
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315 |
Hu Sheng-Dong(胡盛东), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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A new analytical model of high voltage silicon on insulator (SOI) thin film devices |
| |
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Chin. Phys. B
2009 Vol.18 (1): 315-319
[Abstract]
(1153)
[HTML 1 KB]
[PDF 672 KB]
(1124)
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778 |
Shao Tao(邵涛), Sun Guang-Sheng(孙广生), Yan Ping(严萍), Wang Jue(王珏), Yuan Wei-Qun(袁伟群), and Zhang Shi-Chang(张适昌) |
| |
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Experimental study of polarity dependence in repetitive nanosecond-pulse breakdown |
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Chin. Phys. B
2007 Vol.16 (3): 778-783
[Abstract]
(1471)
[HTML 1 KB]
[PDF 658 KB]
(728)
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3754 |
Duan Bao-Xing(段宝兴), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
| |
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New CMOS compatible super junction LDMOST with n-type buried layer |
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Chin. Phys. B
2007 Vol.16 (12): 3754-3759
[Abstract]
(1380)
[HTML 0 KB]
[PDF 778 KB]
(757)
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2231 |
Huang Wei (黄伟), Wu Zhong-Kang (吴仲康), Wang Chang-Qing (王长青) |
| |
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Light-induced acoustic effect in LiNbO3:Fe:Ce crystals |
| |
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Chin. Phys. B
2005 Vol.14 (11): 2231-2234
[Abstract]
(1175)
[HTML 1 KB]
[PDF 321 KB]
(484)
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359 |
Duan Zuo-Liang (段作梁), Chen Jian-Ping (陈建平), Li Ru-Xin (李儒新), Lin Li-Huang (林礼煌), Xu Zhi-Zhan (徐至展) |
| |
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Optical breakdown and filamentation of femtosecond laser pulses propagating in air at a kHz repetition rate |
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Chin. Phys. B
2004 Vol.13 (3): 359-363
[Abstract]
(1423)
[HTML 0 KB]
[PDF 509 KB]
(548)
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508 |
Lee Cun-biao (李存标), Fu Song (符松) |
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ON THE BREAKDOWN OF A LONG STREAK IN A TRANSITIONAL BOUNDARY LAYER |
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Chin. Phys. B
2000 Vol.9 (7): 508-514
[Abstract]
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[HTML 1 KB]
[PDF 5207 KB]
(500)
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757 |
Liu Guo-zhi (刘国治), Liu Jing-yue (刘静月), Huang Wen-hua (黄文华), Zhou Jin-shan (周金山), Song Xiao-xin (宋晓欣), Ning Hui (宁辉) |
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A STUDY OF HIGH POWER MICROWAVE AIR BREAKDOWN |
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Chin. Phys. B
2000 Vol.9 (10): 757-763
[Abstract]
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[HTML 0 KB]
[PDF 270 KB]
(1542)
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