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Other articles related with "LDMOS"：
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67303 |
Jie Xu(许杰), Nai-Long He(何乃龙), Hai-Lian Liang(梁海莲), Sen Zhang(张森), Yu-De Jiang(姜玉德), and Xiao-Feng Gu(顾晓峰) |
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Terminal-optimized 700-V LDMOS with improved breakdown voltage and ESD robustness |
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Chin. Phys. B
2021 Vol.30 (6): 67303-067303
[Abstract]
(461)
[HTML 0 KB]
[PDF 1025 KB]
(98)
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57303 |
Wei-Zhong Chen(陈伟中), Yuan-Xi Huang(黄元熙), Yao Huang(黄垚), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生) |
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A super-junction SOI-LDMOS with low resistance electron channel |
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Chin. Phys. B
2021 Vol.30 (5): 57303-057303
[Abstract]
(507)
[HTML 1 KB]
[PDF 1674 KB]
(130)
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48503 |
Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂) |
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Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit |
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Chin. Phys. B
2021 Vol.30 (4): 48503-
[Abstract]
(341)
[HTML 1 KB]
[PDF 753 KB]
(277)
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37201 |
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园) |
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Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate |
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Chin. Phys. B
2019 Vol.28 (3): 37201-037201
[Abstract]
(631)
[HTML 1 KB]
[PDF 1984 KB]
(154)
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27101 |
Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜) |
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Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET |
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Chin. Phys. B
2017 Vol.26 (2): 27101-027101
[Abstract]
(639)
[HTML 1 KB]
[PDF 651 KB]
(378)
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27306 |
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉) |
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A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology |
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Chin. Phys. B
2016 Vol.25 (2): 27306-027306
[Abstract]
(786)
[HTML 1 KB]
[PDF 857 KB]
(919)
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47303 |
Ma Jin-Rong (马金荣), Qiao Ming (乔明), Zhang Bo (张波) |
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Novel substrate trigger SCR-LDMOS stacking structure for high-voltage ESD protection application |
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Chin. Phys. B
2015 Vol.24 (4): 47303-047303
[Abstract]
(757)
[HTML 0 KB]
[PDF 308 KB]
(776)
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128501 |
Hu Xia-Rong (胡夏融), Lü Rui (吕瑞) |
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An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS |
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Chin. Phys. B
2014 Vol.23 (12): 128501-128501
[Abstract]
(584)
[HTML 1 KB]
[PDF 325 KB]
(375)
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77306 |
Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波) |
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A low specific on-resistance SOI LDMOS with a novel junction field plate |
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Chin. Phys. B
2014 Vol.23 (7): 77306-077306
[Abstract]
(839)
[HTML 1 KB]
[PDF 451 KB]
(547)
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38503 |
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) |
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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer |
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Chin. Phys. B
2014 Vol.23 (3): 38503-038503
[Abstract]
(510)
[HTML 1 KB]
[PDF 749 KB]
(603)
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67306 |
Zhou Kun (周坤), Luo Xiao-Rong (罗小蓉), Fan Yuan-Hang (范远航), Luo Yin-Chun (罗尹春), Hu Xia-Rong (胡夏融), Zhang Bo (张波) |
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A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS |
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Chin. Phys. B
2013 Vol.22 (6): 67306-067306
[Abstract]
(717)
[HTML 1 KB]
[PDF 938 KB]
(774)
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78501 |
Zhai Ya-Hong (翟亚红), Li Wei (李威), Li Ping (李平), Li Jun-Hong (李俊宏), Hu Bin (胡滨), Huo Wei-Rong (霍伟荣), Fan Xue (范雪), Wang Gang (王刚) |
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Lead zirconate titanate behaviors in LDMOS |
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Chin. Phys. B
2013 Vol.22 (7): 78501-078501
[Abstract]
(512)
[HTML 1 KB]
[PDF 439 KB]
(478)
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78502 |
Hu Xia-Rong(胡夏融), Zhang Bo(张波), Luo Xiao-Rong(罗小蓉), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), and Li Zhao-Ji(李肇基) |
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A new analytical model for the surface electric field distribution and breakdown voltage of the SOI trench LDMOS |
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Chin. Phys. B
2012 Vol.21 (7): 78502-078502
[Abstract]
(1445)
[HTML 1 KB]
[PDF 152 KB]
(1036)
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3754 |
Duan Bao-Xing(段宝兴), Zhang Bo(张波), and Li Zhao-Ji(李肇基) |
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New CMOS compatible super junction LDMOST with n-type buried layer |
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Chin. Phys. B
2007 Vol.16 (12): 3754-3759
[Abstract]
(1378)
[HTML 0 KB]
[PDF 778 KB]
(757)
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