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Other articles related with "GaSb"：
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128503 |
Zhaojun Liu(刘昭君), Lian-Qing Zhu(祝连庆), Xian-Tong Zheng(郑显通), Yuan Liu(柳渊), Li-Dan Lu(鹿利单), and Dong-Liang Zhang(张东亮) |
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Interface effect on superlattice quality and optical properties of InAs/GaSb type-II superlattices grown by molecular beam epitaxy |
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Chin. Phys. B
2022 Vol.31 (12): 128503-128503
[Abstract]
(257)
[HTML 1 KB]
[PDF 1671 KB]
(154)
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98504 |
Fang-Qi Lin(林芳祁), Nong Li(李农), Wen-Guang Zhou(周文广), Jun-Kai Jiang(蒋俊锴), Fa-Ran Chang(常发冉), Yong Li(李勇), Su-Ning Cui(崔素宁), Wei-Qiang Chen(陈伟强), Dong-Wei Jiang(蒋洞微), Hong-Yue Hao(郝宏玥), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), and Zhi-Chuan Niu(牛智川) |
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Growth of high material quality InAs/GaSb type-II superlattice for long-wavelength infrared range by molecular beam epitaxy |
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Chin. Phys. B
2022 Vol.31 (9): 98504-098504
[Abstract]
(317)
[HTML 0 KB]
[PDF 1453 KB]
(115)
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76103 |
Ren-Jie Liu(刘仁杰), Jia-Jie Lin(林家杰), Zheng-Hao Shen(沈正皓), Jia-Liang Sun(孙嘉良), Tian-Gui You(游天桂), Jin Li(李进), Min Liao(廖敏), and Yi-Chun Zhou(周益春) |
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Heterogeneous integration of GaSb layer on (100) Si substrate by ion-slicing technique |
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Chin. Phys. B
2022 Vol.31 (7): 76103-076103
[Abstract]
(318)
[HTML 1 KB]
[PDF 1957 KB]
(121)
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68503 |
Xue-Yue Xu(许雪月), Jun-Kai Jiang(蒋俊锴), Wei-Qiang Chen(陈伟强), Su-Ning Cui(崔素宁), Wen-Guang Zhou(周文广), Nong Li(李农), Fa-Ran Chang(常发冉), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Dong-Wei Jiang(蒋洞微), Dong-Hai Wu(吴东海), Hong-Yue Hao(郝宏玥), and Zhi-Chuan Niu(牛智川) |
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Wet etching and passivation of GaSb-based very long wavelength infrared detectors |
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Chin. Phys. B
2022 Vol.31 (6): 68503-068503
[Abstract]
(358)
[HTML 1 KB]
[PDF 1187 KB]
(126)
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96105 |
Feng-Chun Pan(潘凤春), Xue-Ling Lin(林雪玲), and Xu-Ming Wang(王旭明) |
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Strain-tuned magnetic properties in (Ga,Fe)Sb: First-principles study |
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Chin. Phys. B
2021 Vol.30 (9): 96105-096105
[Abstract]
(411)
[HTML 1 KB]
[PDF 2801 KB]
(78)
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28504 |
Yong Li(李勇), Xiao-Ming Li(李晓明), Rui-Ting Hao(郝瑞亭), Jie Guo(郭杰), Yu Zhuang(庄玉), Su-Ning Cui(崔素宁), Guo-Shuai Wei(魏国帅), Xiao-Le Ma(马晓乐), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川), and Yao Wang(王耀) |
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Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers |
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Chin. Phys. B
2021 Vol.30 (2): 28504-0
[Abstract]
(633)
[HTML 1 KB]
[PDF 3217 KB]
(131)
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117301 |
Jia-Feng Liu(刘家丰), Ning-Tao Zhang(张宁涛), Yan Teng(滕), Xiu-Jun Hao(郝修军), Yu Zhao(赵宇), Ying Chen(陈影), He Zhu(朱赫), Hong Zhu(朱虹), Qi-Hua Wu(吴启花), Xin Li(李欣), Bai-Le Chen(陈佰乐)§, and Yong Huang(黄勇) |
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Short-wavelength infrared InAs/GaSb superlattice hole avalanche photodiode |
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Chin. Phys. B
2020 Vol.29 (11): 117301-
[Abstract]
(403)
[HTML 1 KB]
[PDF 536 KB]
(78)
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38504 |
Xuan-Zhang Li(李炫璋), Ling Sun(孙令), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Chen Yue(岳琛), Li-Li Xie(谢莉莉), Wen-Xin Wang(王文新), Hong Chen(陈弘), Hai-Qiang Jia(贾海强), Lu Wang(王禄) |
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A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector |
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Chin. Phys. B
2020 Vol.29 (3): 38504-038504
[Abstract]
(741)
[HTML 1 KB]
[PDF 494 KB]
(179)
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57102 |
Ding Yu(余丁), Guiying Shen(沈桂英), Hui Xie(谢辉), Jingming Liu(刘京明), Jing Sun(孙静), Youwen Zhao(赵有文) |
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Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal |
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Chin. Phys. B
2019 Vol.28 (5): 57102-057102
[Abstract]
(652)
[HTML 1 KB]
[PDF 456 KB]
(155)
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38504 |
Zhi Jiang(蒋志), Yao-Yao Sun(孙姚耀), Chun-Yan Guo(郭春妍), Yue-Xi Lv(吕粤希), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) |
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High quantum efficiency long-/long-wave dual-color type-Ⅱ InAs/GaSb infrared detector |
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Chin. Phys. B
2019 Vol.28 (3): 38504-038504
[Abstract]
(1042)
[HTML 1 KB]
[PDF 958 KB]
(190)
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34202 |
Jin-Ming Shang(尚金铭), Jian Feng(冯健), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Yi Zhang(张一), Cun-Zhu Tong(佟存柱), Yu Zhang(张宇), Zhi-Chuan Niu(牛智川) |
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High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy |
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Chin. Phys. B
2019 Vol.28 (3): 34202-034202
[Abstract]
(819)
[HTML 1 KB]
[PDF 1109 KB]
(144)
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18103 |
Z K Zhang, W W Pan, J L Liu, W Lei |
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A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates |
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Chin. Phys. B
2019 Vol.28 (1): 18103-018103
[Abstract]
(794)
[HTML 1 KB]
[PDF 5470 KB]
(311)
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124207 |
Yi Zhang(张一), Fu-Hui Shao(邵福会), Cheng-Ao Yang(杨成奥), Sheng-Wen Xie(谢圣文), Shu-Shan Huang(黄书山), Ye Yuan(袁野), Jin-Ming Shang(尚金铭), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
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Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm |
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Chin. Phys. B
2018 Vol.27 (12): 124207-124207
[Abstract]
(580)
[HTML 1 KB]
[PDF 1989 KB]
(197)
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47209 |
Ling Sun(孙令), Lu Wang(王禄), Jin-Lei Lu(鲁金蕾), Jie Liu(刘洁), Jun Fang(方俊), Li-Li Xie(谢莉莉), Zhi-Biao Hao(郝智彪), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Hong Chen(陈弘) |
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Room-temperature operating extended short wavelength infrared photodetector based on interband transition of InAsSb/GaSb quantum well |
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Chin. Phys. B
2018 Vol.27 (4): 47209-047209
[Abstract]
(799)
[HTML 1 KB]
[PDF 1486 KB]
(264)
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107801 |
Yong-Biao Bai(白永彪), You-Wen Zhao(赵有文), Gui-Ying Shen(沈桂英), Xiao-Yu Chen(陈晓玉), Jing-Ming Liu(刘京明), Hui Xie(谢晖), Zhi-Yuan Dong(董志远), Jun Yang(杨俊), Feng-Yun Yang(杨凤云), Feng-Hua Wang(王凤华) |
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N-type GaSb single crystals with high below-band gap transmission |
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Chin. Phys. B
2017 Vol.26 (10): 107801-107801
[Abstract]
(628)
[HTML 1 KB]
[PDF 630 KB]
(275)
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98506 |
Yao-yao Sun(孙姚耀), Yue-xi Lv(吕粤希), Xi Han(韩玺), Chun-yan Guo(郭春妍), Zhi Jiang(蒋志), Hong-yue Hao(郝宏玥), Dong-wei Jiang(蒋洞微), Guo-wei Wang(王国伟), Ying-qiang Xu(徐应强), Zhi-chuan Niu(牛智川) |
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Performance of dual-band short- or mid-wavelength infrared photodetectors based on InGaAsSb bulk materials and InAs/GaSb superlattices |
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Chin. Phys. B
2017 Vol.26 (9): 98506-098506
[Abstract]
(731)
[HTML 1 KB]
[PDF 327 KB]
(305)
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47303 |
Hong-Yue Hao(郝宏玥), Wei Xiang(向伟), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Xi Han(韩玺), Yao-Yao Sun(孙瑶耀), Dong-Wei Jiang(蒋洞微), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Si-Hang Wei(魏思航), Zhi-Chuan Niu(牛智川) |
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Etching mask optimization of InAs/GaSb superlattice mid-wavelength infared 640×512 focal plane array |
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Chin. Phys. B
2017 Vol.26 (4): 47303-047303
[Abstract]
(706)
[HTML 1 KB]
[PDF 3694 KB]
(579)
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47201 |
Shaoyan Di(邸绍岩), Lei Shen(沈磊), Zhiyuan Lun(伦志远), Pengying Chang(常鹏鹰), Kai Zhao(赵凯), Tiao Lu(卢朓), Gang Du(杜刚), Xiaoyan Liu(刘晓彦) |
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Investigation of the surface orientation influence on 10-nm double gate GaSb nMOSFETs |
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Chin. Phys. B
2017 Vol.26 (4): 47201-047201
[Abstract]
(667)
[HTML 1 KB]
[PDF 801 KB]
(265)
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18505 |
Xi Han(韩玺), Wei Xiang(向伟), Hong-Yue Hao(郝宏玥), Dong-Wei Jiang(蒋洞微), Yao-Yao Sun(孙姚耀), Guo-Wei Wang(王国伟), Ying-Qiang Xu(徐应强), Zhi-Chuan Niu(牛智川) |
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Very long wavelength infrared focal plane arrays with 50% cutoff wavelength based on type-II InAs/GaSb superlattice |
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Chin. Phys. B
2017 Vol.26 (1): 18505-018505
[Abstract]
(771)
[HTML 1 KB]
[PDF 2253 KB]
(573)
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77801 |
Jie Su(苏杰), Tong Liu(刘彤), Jing-Ming Liu(刘京明), Jun Yang(杨俊), Yong-Biao Bai(白永彪), Gui-Ying Shen(沈桂英), Zhi-Yuan Dong(董志远), Fang-Fang Wang(王芳芳), You-Wen Zhao(赵有文) |
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Thermally induced native defect transform in annealed GaSb |
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Chin. Phys. B
2016 Vol.25 (7): 77801-077801
[Abstract]
(665)
[HTML 1 KB]
[PDF 747 KB]
(305)
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38504 |
Yan-Wen Chen(陈燕文), Zhen Tan(谭桢), Lian-Feng Zhao(赵连锋), Jing Wang(王敬), Yi-Zhou Liu(刘易周),Chen Si(司晨), Fang Yuan(袁方), Wen-Hui Duan(段文晖), Jun Xu(许军) |
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Mobility enhancement of strained GaSb p-channel metal—oxide—semiconductor field-effect transistorswith biaxial compressive strain |
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Chin. Phys. B
2016 Vol.25 (3): 38504-038504
[Abstract]
(585)
[HTML 1 KB]
[PDF 2024 KB]
(475)
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24204 |
Cheng-Ao Yang(杨成奥), Yu Zhang(张宇), Yong-Ping Liao(廖永平), Jun-Liang Xing(邢军亮), Si-Hang Wei(魏思航), Li-Chun Zhang(张立春), Ying-Qiang Xu(徐应强), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
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2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography |
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Chin. Phys. B
2016 Vol.25 (2): 24204-024204
[Abstract]
(687)
[HTML 1 KB]
[PDF 966 KB]
(359)
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18501 |
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军) |
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GaSb p-channel metal-oxide-semiconductor field-effect transistor and its temperature dependent characteristics |
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Chin. Phys. B
2015 Vol.24 (1): 18501-018501
[Abstract]
(616)
[HTML 0 KB]
[PDF 385 KB]
(508)
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88110 |
Wang Lian-Kai (王连锴), Liu Ren-Jun (刘仁俊), Yang Hao-Yu (杨皓宇), Lü You (吕游), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) |
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Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition |
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Chin. Phys. B
2014 Vol.23 (8): 88110-088110
[Abstract]
(572)
[HTML 1 KB]
[PDF 2173 KB]
(365)
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78102 |
Zhao Lian-Feng (赵连锋), Tan Zhen (谭桢), Wang Jing (王敬), Xu Jun (许军) |
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Improved interfacial and electrical properties of GaSb metal oxide semiconductor devices passivated with acidic (NH4)2S solution |
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Chin. Phys. B
2014 Vol.23 (7): 78102-078102
[Abstract]
(571)
[HTML 1 KB]
[PDF 879 KB]
(391)
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17701 |
Tan Zhen (谭桢), Zhao Lian-Feng (赵连锋), Wang Jing (王敬), Xu Jun (许军) |
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Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation |
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Chin. Phys. B
2014 Vol.23 (1): 17701-017701
[Abstract]
(590)
[HTML 1 KB]
[PDF 520 KB]
(540)
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17805 |
Xing Jun-Liang (邢军亮), Zhang Yu (张宇), Xu Ying-Qiang (徐应强), Wang Guo-Wei (王国伟), Wang Juan (王娟), Xiang Wei (向伟), Ni Hai-Qiao (倪海桥), Ren Zheng-Wei (任正伟), He Zhen-Hong (贺振宏), Niu Zhi-Chuan (牛智川) |
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High quality above 3-μm mid-infrared InGaAsSb/AlGaInAsSb multiple-quantum well grown by molecular beam epitaxy |
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Chin. Phys. B
2014 Vol.23 (1): 17805-017805
[Abstract]
(559)
[HTML 1 KB]
[PDF 1617 KB]
(533)
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108402 |
Yang Hao-Yu (杨皓宇), Liu Ren-Jun (刘仁俊), Wang Lian-Kai (王连锴), Lü You (吕游), Li Tian-Tian (李天天), Li Guo-Xing (李国兴), Zhang Yuan-Tao (张源涛), Zhang Bao-Lin (张宝林) |
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The design and numerical analysis of tandem thermophotovoltaic cells |
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Chin. Phys. B
2013 Vol.22 (10): 108402-108402
[Abstract]
(571)
[HTML 1 KB]
[PDF 316 KB]
(746)
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67302 |
Wang Yong-Bin (王永宾), Xu Yun (徐云), Zhang Yu (张宇), Yu Xiu (迂修), Song Guo-Feng (宋国峰), Chen Liang-Hui (陈良惠) |
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Effect of compensation doping on the electrical and optical properties of mid-infrared type-II InAs/GaSb superlattice photodetectors |
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Chin. Phys. B
2011 Vol.20 (6): 67302-067302
[Abstract]
(1392)
[HTML 0 KB]
[PDF 1206 KB]
(1440)
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125202 |
Li Zhi-Chao(李志超), Zheng Jian(郑坚), Ding Yong-Kun(丁永坤), Yin Qiang(尹强), Jiang Xiao-Hua(蒋小华), Li San-Wei(李三伟), Guo Liang(郭亮), Yang Dong(杨冬), Wang Zhe-Bin(王哲斌), Zhang Huan(章欢), Liu Yong-Gang(刘永刚), Zhan Xia-Yu(詹夏宇), and Tang Qi(唐琦) |
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Generation and characterization of millimeter-scale plasmas for the research of laser plasma interactions on Shenguang-III prototype |
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Chin. Phys. B
2010 Vol.19 (12): 125202-125202
[Abstract]
(1649)
[HTML 1 KB]
[PDF 919 KB]
(703)
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2012 |
Qiao Zai-Xiang(乔在祥), Sun Yun(孙云), He Wei-Yu(何炜瑜), Liu Wei(刘玮), He Qing(何青), and Li Chang-Jian(李长健) |
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Raman scattering of polycrystalline GaSb thin films grown by the co-evapouration process |
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Chin. Phys. B
2009 Vol.18 (5): 2012-2015
[Abstract]
(1423)
[HTML 1 KB]
[PDF 299 KB]
(878)
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2169 |
Liu Fa-Min (刘发民), Wang Tian-Min (王天民), Zhang Li-De (张立德) |
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Raman properties of GaSb nanoparticles embedded in SiO2 films |
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Chin. Phys. B
2004 Vol.13 (12): 2169-2173
[Abstract]
(1007)
[HTML 0 KB]
[PDF 234 KB]
(407)
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