After approximately half a century of development, HgCdTe infrared detectors have become the first choice for high performance infrared detectors, which are widely used in various industry sectors, including military tracking, military reconnaissance, infrared guidance, infrared warning, weather forecasting, and resource detection. Further development in infrared applications requires future HgCdTe infrared detectors to exhibit features such as larger focal plane array format and thus higher imaging resolution. An effective approach to develop HgCdTe infrared detectors with a larger array format size is to develop the small pixel technology. In this article, we present a review on the developmental history and current status of small pixel technology for HgCdTe infrared detectors, as well as the main challenges and potential solutions in developing this technology. It is predicted that the pixel size of long-wave HgCdTe infrared detectors can be reduced to 5 μm, while that of mid-wave HgCdTe infrared detectors can be reduced to 3 μm. Although significant progress has been made in this area, the development of small pixel technology for HgCdTe infrared detectors still faces significant challenges such as flip-chip bonding, interconnection, and charge processing capacity of readout circuits. Various approaches have been proposed to address these challenges, including three-dimensional stacking integration and readout circuits based on microelectromechanical systems.
Small-molecule organic semiconductor crystals (SMOSCs) combine broadband light absorption (ultraviolet-visible-near infrared) with long exciton diffusion length and high charge carrier mobility. Therefore, they are promising candidates for realizing high-performance photodetectors. Here, after a brief resume of photodetector performance parameters and operation mechanisms, we review the recent advancements in application of SMOSCs as photodetectors, including photoconductors, phototransistors, and photodiodes. More importantly, the SMOSC-based photodetectors are further categorized according to their detection regions that cover a wide range from ultraviolet to near infrared. Finally, challenges and outlooks of SMOSC-based photodetectors are provided.
We report the synthesis of Nd-filled and Fe substituted p-type NdxFe3.2Co0.8Sb12 (x=0.5, 0.6, 0.7, 0.8, and 0.9) skutterudites by the solid-state reaction method. The influences of Nd filler on the electrical and thermal transport properties are investigated in a temperature range from room temperature to 850 K. A lowest lattice thermal conductivity of 0.88 W·m-1·K-1 is obtained in Nd0.8Fe3.2Co0.8Sb12 at 673 K, which results from the localized vibration modes of fillers and the increase of grains boundaries. Meanwhile, the maximum power factor is 2.77 mW·m-1·K-2 for the Nd0.9Fe3.2Co0.8Sb12 sample at 668 K. Overall, the highest dimensionless figure of merit zT=0.87 is achieved at 714 K for Nd0.9Fe3.2Co0.8Sb12.
In this work, we report that the thermoelectric properties of Bi0.52Sb1.48Te3 alloy can be enhanced by being composited with MnTe nano particles (NPs) through a combined ball milling and spark plasma sintering (SPS) process. The addition of MnTe into the host can synergistically reduce the lattice thermal conductivity by increasing the interface phonon scattering between Bi0.52Sb1.48Te3 and MnTe NPs, and enhance the electrical transport properties by optimizing the hole concentration through partial Mn2+ acceptor doping on the Bi3+ sites of the host lattice. It is observed that the lattice thermal conductivity decreases with increasing the percentage of MnTe and milling time in a temperature range from 300 K to 500 K, which is consistent with the increasing of interfaces. Meanwhile, the bipolar effect is constrained to high temperatures, which results in the figure of merit zT peak shifting toward higher temperature and broadening the zT curves. The engineering zT is obtained to be 20% higher than that of the pristine sample for the 2-mol% MnTe-added composite at a temperature gradient of 200 K when the cold end temperature is set to be 300 K. This result indicates that the thermoelectric performance of Bi0.52Sb1.48Te3 can be considerably enhanced by being composited with MnTe NPs.