Content of TOPICAL REVIEW—Low-dimensional complex oxide structures in our journal

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    Aberration-corrected scanning transmission electron microscopy for complex transition metal oxides
    Qing-Hua Zhang(张庆华), Dong-Dong Xiao(肖东东), Lin Gu(谷林)
    Chin. Phys. B, 2016, 25 (6): 066803.   DOI: 10.1088/1674-1056/25/6/066803
    Abstract729)   HTML    PDF (3859KB)(753)      

    Lattice, charge, orbital, and spin are the four fundamental degrees of freedom in condensed matter, of which the interactive coupling derives tremendous novel physical phenomena, such as high-temperature superconductivity (high-Tc SC) and colossal magnetoresistance (CMR) in strongly correlated electronic system. Direct experimental observation of these freedoms is essential to understanding the structure-property relationship and the physics behind it, and also indispensable for designing new materials and devices. Scanning transmission electron microscopy (STEM) integrating multiple techniques of structure imaging and spectrum analysis, is a comprehensive platform for providing structural, chemical and electronic information of materials with a high spatial resolution. Benefiting from the development of aberration correctors, STEM has taken a big breakthrough towards sub-angstrom resolution in last decade and always steps forward to improve the capability of material characterization; many improvements have been achieved in recent years, thereby giving an in-depth insight into material research. Here, we present a brief review of the recent advances of STEM by some representative examples of perovskite transition metal oxides; atomic-scale mapping of ferroelectric polarization, octahedral distortions and rotations, valence state, coordination and spin ordering are presented. We expect that this brief introduction about the current capability of STEM could facilitate the understanding of the relationship between functional properties and these fundamental degrees of freedom in complex oxides.

    Modulation of physical properties of oxide thin films by multiple fields
    Hua-Li Yang(杨华礼), Bao-Min Wang(王保敏), Xiao-Jian Zhu(朱小健), Jie Shang(尚杰), Bin Chen(陈斌), Run-Wei Li(李润伟)
    Chin. Phys. B, 2016, 25 (6): 067303.   DOI: 10.1088/1674-1056/25/6/067303
    Abstract500)   HTML    PDF (9560KB)(652)      

    Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices.

    Electrical control of magnetism in oxides
    Cheng Song(宋成), Bin Cui(崔彬), Jingjing Peng(彭晶晶), Haijun Mao(毛海军), Feng Pan(潘峰)
    Chin. Phys. B, 2016, 25 (6): 067502.   DOI: 10.1088/1674-1056/25/6/067502
    Abstract514)   HTML    PDF (4992KB)(1047)      

    Recent progress in the electrical control of magnetism in oxides, with profound physics and enormous potential applications, is reviewed and illustrated. In the first part, we provide a comprehensive summary of the electrical control of magnetism in the classic multiferroic heterostructures and clarify the various mechanisms lying behind them. The second part focuses on the novel technique of electric double layer gating for driving a significant electronic phase transition in magnetic oxides by a small voltage. In the third part, electric field applied on ordinary dielectric oxide is used to control the magnetic phenomenon originating from charge transfer and orbital reconstruction at the interface between dissimilar correlated oxides. At the end, we analyze the challenges in electrical control of magnetism in oxides, both the mechanisms and practical applications, which will inspire more in-depth research and advance the development in this field.

    Nanoscale control of low-dimensional spin structures in manganites
    Jing Wang(王静), Iftikhar Ahmed Malik, Renrong Liang(梁仁荣), Wen Huang(黄文), Renkui Zheng(郑仁奎), Jinxing Zhang(张金星)
    Chin. Phys. B, 2016, 25 (6): 067504.   DOI: 10.1088/1674-1056/25/6/067504
    Abstract779)   HTML    PDF (3256KB)(598)      

    Due to the upcoming demands of next-generation electronic/magnetoelectronic devices with low-energy consumption, emerging correlated materials (such as superconductors, topological insulators and manganites) are one of the highly promising candidates for the applications. For the past decades, manganites have attracted great interest due to the colossal magnetoresistance effect, charge-spin-orbital ordering, and electronic phase separation. However, the incapable of deterministic control of those emerging low-dimensional spin structures at ambient condition restrict their possible applications. Therefore, the understanding and control of the dynamic behaviors of spin order parameters at nanoscale in manganites under external stimuli with low energy consumption, especially at room temperature is highly desired. In this review, we collected recent major progresses of nanoscale control of spin structures in manganites at low dimension, especially focusing on the control of their phase boundaries, domain walls as well as the topological spin structures (e.g., skyrmions). In addition, capacitor-based prototype spintronic devices are proposed by taking advantage of the above control methods in manganites. This capacitor-based structure may provide a new platform for the design of future spintronic devices with low-energy consumption.

ISSN 1674-1056   CN 11-5639/O4

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