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CN 11-5639/O4
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Other articles related with "85.35.Be":
57305 Xiong Xu, Mao-Fa Fang
  Dynamics of entropic uncertainty for three types of three-level atomic systems under the random telegraph noise
    Chin. Phys. B   2020 Vol.29 (5): 57305-057305 [Abstract] (31) [HTML 1 KB] [PDF 1732 KB] (19)
40306 Xiong Xu, Mao-Fa Fang
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38504 Xuan-Zhang Li, Ling Sun, Jin-Lei Lu, Jie Liu, Chen Yue, Li-Li Xie, Wen-Xin Wang, Hong Chen, Hai-Qiang Jia, Lu Wang
  A method to extend wavelength into middle-wavelength infrared based on InAsSb/(Al)GaSb interband transition quantum well infrared photodetector
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118103 Qianqian Wu, Fan Cao, Lingmei Kong, Xuyong Yang
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    Chin. Phys. B   2019 Vol.28 (11): 118103-118103 [Abstract] (133) [HTML 1 KB] [PDF 4160 KB] (182)
20701 Jinming Hu, Yuansheng Shi, Zhenheng Zhang, Ruonan Zhi, Shengyi Yang, Bingsuo Zou
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    Chin. Phys. B   2019 Vol.28 (2): 20701-020701 [Abstract] (266) [HTML 1 KB] [PDF 5611 KB] (331)
27801 Xiaohao Zhou, Ning Li, Wei Lu
  Progress in quantum well and quantum cascade infrared photodetectors in SITP
    Chin. Phys. B   2019 Vol.28 (2): 27801-027801 [Abstract] (216) [HTML 1 KB] [PDF 6844 KB] (193)
128105 Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Sheng-Wen Xie, Jin-Ming Shang, Yun-Hao Zhao, Chen-Yuan Cai, Ren-Chao Che, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
  1.3-μm InAs/GaAs quantum dots grown on Si substrates
    Chin. Phys. B   2018 Vol.27 (12): 128105-128105 [Abstract] (284) [HTML 1 KB] [PDF 5545 KB] (138)
88504 Li-Wen Cheng, Jian Ma, Chang-Rui Cao, Zuo-Zheng Xu, Tian Lan, Jin-Peng Yang, Hai-Tao Chen, Hong-Yan Yu, Shu-Dong Wu, Shun Yao, Xiang-Hua Zeng, Zai-Quan Xu
  Improved carrier injection and confinement in InGaN light-emitting diodes containing GaN/AlGaN/GaN triangular barriers
    Chin. Phys. B   2018 Vol.27 (8): 88504-088504 [Abstract] (264) [HTML 1 KB] [PDF 799 KB] (159)
18503 Shuaipu Zang, Yinglin Wang, Meiying Li, Wei Su, Meiqi An, Xintong Zhang, Yichun Liu
  Performance enhancement of ZnO nanowires/PbS quantum dot depleted bulk heterojunction solar cells with an ultrathin Al2O3 interlayer
    Chin. Phys. B   2018 Vol.27 (1): 18503-018503 [Abstract] (179) [HTML 1 KB] [PDF 1347 KB] (246)
108504 Chong Wang, Meng-Di Zhao, Yun-Long He, Xue-Feng Zheng, Kun Zhang, Xiao-Xiao Wei, Wei Mao, Xiao-Hua Ma, Jin-Cheng Zhang, Yue Hao
  Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT
    Chin. Phys. B   2016 Vol.25 (10): 108504-108504 [Abstract] (179) [HTML 1 KB] [PDF 655 KB] (256)
84206 Yuan-Yuan Li, Jun-Qi Liu, Feng-Qi Liu, Jin-Chuan Zhang, Shen-Qiang Zhai, Ning Zhuo, Li-Jun Wang, Shu-Man Liu, Zhan-Guo Wang
  High power-efficiency terahertz quantum cascade laser
    Chin. Phys. B   2016 Vol.25 (8): 84206-084206 [Abstract] (226) [HTML 1 KB] [PDF 1042 KB] (408)
48401 M Tiotsop, A J Fotue, S C Kenfack, N Issofa, H Fotsin, L C Fai
  Effects of Shannon entropy and electric field on polaron in RbCl triangular quantum dot
    Chin. Phys. B   2016 Vol.25 (4): 48401-048401 [Abstract] (177) [HTML 1 KB] [PDF 7612 KB] (321)
24212 Yan Fang-Liang, Zhang Jin-Chuan, Yao Dan-Yang, Liu Feng-Qi, Wang Li-Jun, Liu Jun-Qi, Wang Zhan-Guo
  Very low threshold operation of quantum cascade lasers
    Chin. Phys. B   2015 Vol.24 (2): 24212-024212 [Abstract] (180) [HTML 0 KB] [PDF 887 KB] (440)
107301 An Xing-Tao
  Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator
    Chin. Phys. B   2014 Vol.23 (10): 107301-107301 [Abstract] (195) [HTML 1 KB] [PDF 283 KB] (334)
88401 Zhao Bi-Jun, Chen Xin, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Li Dan-Wei, Zhuo Xiang-Jing, Zhang Jun, Yi Han-Xiang, Li Shu-Ti
  Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content
    Chin. Phys. B   2013 Vol.22 (8): 88401-088401 [Abstract] (207) [HTML 1 KB] [PDF 421 KB] (614)
78402 Chen Xin, Zhao Bi-Jun, Ren Zhi-Wei, Tong Jin-Hui, Wang Xing-Fu, Zhuo Xiang-Jing, Zhang Jun, Li Dan-Wei, Yi Han-Xiang, Li Shu-Ti
  Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells
    Chin. Phys. B   2013 Vol.22 (7): 78402-078402 [Abstract] (478) [HTML 1 KB] [PDF 2267 KB] (696)
68503 Wang Chong, He Yun-Long, Zheng Xue-Feng, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
  AlGaN/GaN high-electron-mobility transistor with transparent gate by Al-doped ZnO
    Chin. Phys. B   2013 Vol.22 (6): 68503-068503 [Abstract] (210) [HTML 1 KB] [PDF 359 KB] (1171)
48102 Li Xin-Kun, Jin Peng, Liang De-Chun, Wu Ju, Wang Zhan-Guo
  InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration
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27805 Mu Xue, Wu Xiao-Ming, Hua Yu-Lin, Jiao Zhi-Qiang, Shen Li-Ying, Su Yue-Ju, Bai Juan-Juan, Bi Wen-Tao, Yin Shou-Gen, Zheng Jia-Jin
  Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer
    Chin. Phys. B   2013 Vol.22 (2): 27805-027805 [Abstract] (404) [HTML 1 KB] [PDF 276 KB] (3749)
108504 Sun Yun-Fei, Sun Jan-Dong, Zhang Xiao-Yu, Qin Hua, Zhang Bao-Shun, Wu Dong-Min
  Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors
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28102 Li Xin-Kun,Liang De-Chun,Jin Peng,An Qi,Wei Heng,Wu Jian,Wang Zhan-Guo
  InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm
    Chin. Phys. B   2012 Vol.21 (2): 28102-028102 [Abstract] (780) [HTML 1 KB] [PDF 329 KB] (1110)
28402 Zhang Xiao-Bin, Wang Xiao-Liang, Xiao Hong-Ling, Yang Cui-Bai, Hou Qi-Feng, Yin Hai-Bo, Chen Hong, Wang Zhan-Guo
  InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage
    Chin. Phys. B   2011 Vol.20 (2): 28402-028402 [Abstract] (1032) [HTML 0 KB] [PDF 596 KB] (2533)
74216 Zhang Yun-Xiao, Liao Zai-Yi, Zhao Ling-Juan, Pan Jiao-Qing, Zhu Hong-Liang, Wang Wei
  Monolithic optical gates based on integration of evanescently-coupled uni-traveling-carrier photodiodes and electroabsorption modulators
    Chin. Phys. B   2010 Vol.19 (7): 74216-074216 [Abstract] (873) [HTML 0 KB] [PDF 794 KB] (709)
17307 Wang Liang-Ji, Zhang Shu-Ming, Zhu Ji-Hong, ZhuJian-Jun, Zhao De-Gang, Liu Zong-Shun, Jiang De-Sheng, WangYu-Tian, Yang Hui
  Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
    Chin. Phys. B   2010 Vol.19 (1): 17307-017307 [Abstract] (997) [HTML 0 KB] [PDF 689 KB] (1093)
18104 Lü Xue-Qin, Jin Peng, Wang Zhan-Guo
  A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission
    Chin. Phys. B   2010 Vol.19 (1): 18104-018104 [Abstract] (925) [HTML 0 KB] [PDF 111 KB] (438)
5020 Li Ming, Zhang Hai-Ying, Guo Chang-Xin, Xu Jing-Bo, Fu Xiao-Jun, Chen Pu-Feng
  Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation
    Chin. Phys. B   2009 Vol.18 (11): 5020-5023 [Abstract] (1160) [HTML 0 KB] [PDF 1438 KB] (720)
4645 Zhang Yang, Zhang Yu, Zeng Yi-Ping
  Dependence of current-voltage characteristics of pseudomorphic AlAs/In0.53a0.47s/InAs resonant tunneling diodes on quantum well widths
    Chin. Phys. B   2008 Vol.17 (12): 4645-4647 [Abstract] (984) [HTML 0 KB] [PDF 1208 KB] (614)
944 Dai Min, Zhang Lin, Bao Yun, Shi Jian-Jun, Chen Kai, Li Wei, Huang Xin-Fan, Chen Kun-Ji
  The charge storage of the nc-Si layer
    Chin. Phys. B   2002 Vol.11 (9): 944-947 [Abstract] (792) [HTML 0 KB] [PDF 237 KB] (570)
121 Lu Yuan, Li Chun-yong, Zhang Yan-feng, Huang Qi, Fu Pan-ming, Zhang Zhi-guo, Lü Lan-bin, Chen Hong-zhi, Qu Chang-zhi, Tang Jun-xiong
  STUDY OF THE FOUR-WAVE MIXING DIFFRACTION EFFICIENCY OF LONGITUDINAL-FIELD MULTIPLE-QUANTUM-WELL PHOTOREFRACTIVE DEVICE GROWN AT LOW TEMPERATURE
    Chin. Phys. B   2001 Vol.10 (2): 121-123 [Abstract] (607) [HTML 0 KB] [PDF 199 KB] (264)
806 WANG WEN-XIN, HU QIANG, HUANG QI, ZHOU JUN-MING, CUI DA-FU, CHEN ZHENG-HAO
  NORMAL-INCIDENCE QUANTUM WELL INFRARED PHOTODETECTOR WITHOUT GRATING COUPLER
    Chin. Phys. B   1995 Vol.4 (11): 806-809 [Abstract] (583) [HTML 0 KB] [PDF 106 KB] (356)
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