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CN 11-5639/O4
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Other articles related with "81.15.Kk":
27801 Sheng-Rui Xu, Ying Zhao, Ren-Yuan Jiang, Teng Jiang, Ze-Yang Ren, Jin-Cheng Zhang, Yue Hao
  22) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition[J]. Chinese Physics B, 2017,26(2): 027801-027801')"/> Semipolar (1122) and polar (0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
    Chin. Phys. B   2017 Vol.26 (2): 27801-027801 [Abstract] (174) [HTML 1 KB] [PDF 2722 KB] (263)
28103 Feng Guo, Xin-Sheng Wang, Shi-Wei Zhuang, Guo-Xing Li, Bao-Lin Zhang, Pen-Chu Chou
  Nanodots and microwires of ZrO2 grown on LaAlO3 by photo-assisted metal-organic chemical vapor deposition
    Chin. Phys. B   2016 Vol.25 (2): 28103-028103 [Abstract] (354) [HTML 1 KB] [PDF 3756 KB] (397)
18102 Wang Lian-Kai, Liu Ren-Jun, Lü You, Yang Hao-Yu, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
  High-crystalline GaSb epitaxial films grown on GaAs(001) substrates by low-pressure metal-organic chemical vapor deposition
    Chin. Phys. B   2015 Vol.24 (1): 18102-018102 [Abstract] (291) [HTML 0 KB] [PDF 961 KB] (315)
96802 Zhao Yun, Wang Gang, Yang Huai-Chao, An Tie-Lei, Chen Min-Jiang, Yu Fang, Tao Li, Yang Jian-Kun, Wei Tong-Bo, Duan Rui-Fei, Sun Lian-Feng
  Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst
    Chin. Phys. B   2014 Vol.23 (9): 96802-096802 [Abstract] (125) [HTML 1 KB] [PDF 990 KB] (1406)
88110 Wang Lian-Kai, Liu Ren-Jun, Yang Hao-Yu, Lü You, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
  Nucleation of GaSb on GaAs (001) by low pressure metal-organic chemical vapor deposition
    Chin. Phys. B   2014 Vol.23 (8): 88110-088110 [Abstract] (153) [HTML 1 KB] [PDF 2173 KB] (345)
47804 Cao Rong-Tao, Xu Sheng-Rui, Zhang Jin-Cheng, Zhao Yi, Xue Jun-Shuai, Ha Wei, Zhang Shuai, Cui Pei-Shui, Wen Hui-Juan, Chen Xing
  Improvement in a-plane GaN crystalline quality using wet etching method
    Chin. Phys. B   2014 Vol.23 (4): 47804-047804 [Abstract] (138) [HTML 1 KB] [PDF 645 KB] (426)
86802 Liu Xing-Fang, Sun Guo-Sheng, Liu Bin, Yan Guo-Guo, Guan Min, Zhang Yang, Zhang Feng, Dong Lin, Zheng Liu, Liu Sheng-Bei, Tian Li-Xin, Wang Lei, Zhao Wan-Shun, Zeng Yi-Ping
  Surface saturation control on the formation of wurtzite polytypes in zinc blende SiC nanofilms grown on Si-(100) substrates
    Chin. Phys. B   2013 Vol.22 (8): 86802-086802 [Abstract] (358) [HTML 1 KB] [PDF 795 KB] (462)
28101 Wang Dang-Hui, Xu Sheng-Rui, Hao Yue, Zhang Jin-Cheng, Xu Tian-Han, Lin Zhi-Yu, Zhou Hao, Xue Xiao-Yong
  Study on the relationships between Raman shifts and temperature range for a-plane GaN using temperature-dependent Raman scattering
    Chin. Phys. B   2013 Vol.22 (2): 28101-028101 [Abstract] (357) [HTML 1 KB] [PDF 301 KB] (703)
126804 Lin Zhi-Yu, Zhang Jin-Cheng, Zhou Hao, Li Xiao-Gang, Meng Fan-Na, Zhang Lin-Xia, Ai Shan, Xu Sheng-Rui, Zhao Yi, Hao Yue
  Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition
    Chin. Phys. B   2012 Vol.21 (12): 126804-126804 [Abstract] (594) [HTML 1 KB] [PDF 3284 KB] (1075)
128101 Peng Dong-Sheng, Chen Zhi-Gang, Tan Cong-Cong
  The influence of SixNy interlayer on GaN film grown on Si(111) substrate
    Chin. Phys. B   2012 Vol.21 (12): 128101-128101 [Abstract] (565) [HTML 1 KB] [PDF 1326 KB] (506)
67803 Zhou Xiao-Wei, Xu Sheng-Rui, Zhang Jin-Cheng, Dang Ji-Yuan, Lü Ling, Hao Yue, Guo Li-Xin
  Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization
    Chin. Phys. B   2012 Vol.21 (6): 67803-067803 [Abstract] (994) [HTML 1 KB] [PDF 178 KB] (1114)
27803 Xue Xiao-Yong,Xu Sheng-Rui,Zhang Jin-Cheng,Lin Zhi-Yu,Ma Jun-Cai,Liu Zi-Yang,Xue Jun-Shuai,Hao Yue
  Temperature dependences of Raman scattering in different types of GaN epilayers
    Chin. Phys. B   2012 Vol.21 (2): 27803-027803 [Abstract] (864) [HTML 1 KB] [PDF 195 KB] (972)
107802 Xu Sheng-Rui, Hao Yue, Zhang Jin-Cheng, Xue Xiao-Yong, Li Pei-Xian, Li Jian-Ting, Lin Zhi-Yu, Liu Zi-Yang, Ma Jun-Cai, He Qiang, Lü Ling
  Stress and morphology of a nonpolar a-plane GaN layer on r-plane sapphire substrate
    Chin. Phys. B   2011 Vol.20 (10): 107802-107802 [Abstract] (1020) [HTML 0 KB] [PDF 883 KB] (1798)
98101 Du Yan-Hao, Wu Jie-Jun, Luo Wei-Ke, John Goldsmith, Han Tong, Tao Yue-Bin, Yang Zhi-Jian, Yu Tong-Jun, Zhang Guo-Yi
  Gradual variation method for thick GaN heteroepitaxy by hydride vapour phase epitaxy
    Chin. Phys. B   2011 Vol.20 (9): 98101-098101 [Abstract] (1129) [HTML 0 KB] [PDF 189 KB] (798)
57801 Zhang Jin-Feng, Xu Sheng-Rui, Zhang Jin-Cheng, Hao Yue
  Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation layer optimization
    Chin. Phys. B   2011 Vol.20 (5): 57801-057801 [Abstract] (1063) [HTML 0 KB] [PDF 1777 KB] (1326)
127801 Li Da-Bing, Hu Wei-Guo, Miyake Hideto, Hiramatsu Kazumasa, Song Hang
  Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs
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106802 Guo Xi, Wang Hui, Jiang De-Sheng, Wang Yu-Tian, Zhao De-Gang, Zhu Jian-Jun, Liu Zong-Shun, Zhang Shu-Ming, Yang Hui
  Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques
    Chin. Phys. B   2010 Vol.19 (10): 106802-106802 [Abstract] (1146) [HTML 0 KB] [PDF 1501 KB] (2873)
107204 Xu Sheng-Rui, Hao Yue, Zhang Jin-Cheng, Zhou Xiao-Wei, Cao Yan-Rong, Ou Xin-Xiu, Mao Wei, Du Da-Chao, Wang Hao
  The etching of a-plane GaN epilayers grown by metal–organic chemical vapour deposition
    Chin. Phys. B   2010 Vol.19 (10): 107204-107204 [Abstract] (1096) [HTML 0 KB] [PDF 1087 KB] (1224)
80517 Huan Qing, Hu Hao, Pan Li-Da, Xiao Jiang, Du Shi-Xuan, Gao Hong-Jun
  Atomic force microscopy investigation of growth process of organic TCNQ aggregates on SiO2 and mica substrates
    Chin. Phys. B   2010 Vol.19 (8): 80517-080517 [Abstract] (1231) [HTML 0 KB] [PDF 426 KB] (597)
87205 G. Husnain, Chen Tian-Xiang, Fa Tao, Yao Shu-De
  Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backscattering/channeling
    Chin. Phys. B   2010 Vol.19 (8): 87205-087205 [Abstract] (1145) [HTML 0 KB] [PDF 399 KB] (641)
76803 Wang Lai, Wang Jia-Xing, Zhao Wei, Zou Xiang, Luo Yi
  Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells
    Chin. Phys. B   2010 Vol.19 (7): 76803-076803 [Abstract] (973) [HTML 0 KB] [PDF 112 KB] (1325)
76804 Guo Xi, Wang Yu-Tian, Zhao De-Gang, Jiang De-Sheng, Zhu Jian-Jun, Liu Zong-Shun, Wang Hui, Zhang Shu-Ming, Qiu Yong-Xin, Xu Ke, Yang Hui
  Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
    Chin. Phys. B   2010 Vol.19 (7): 76804-076804 [Abstract] (1298) [HTML 0 KB] [PDF 803 KB] (2774)
3499 Jiao Zhi-Wei, Chen Miao-Gen, Jiang Wei-Di, Feng Chun-Mu, Ye Gao-Xiang
  Anomalous magnetic properties of an iron film system deposited on fracture surfaces of α-Al2O3 ceramics
    Chin. Phys. B   2008 Vol.17 (9): 3499-3504 [Abstract] (902) [HTML 0 KB] [PDF 727 KB] (514)
1454 Zhen Guo-Yong, Jian Ao-Qun, Xu Hong-Yan, Xue Chen-Yang, Zhang Wen-Dong
  Comparison between photoluminescence spectroscopy and photoreflectance spectroscopy in CuGaSe2 epilayer
    Chin. Phys. B   2008 Vol.17 (4): 1454-1460 [Abstract] (883) [HTML 0 KB] [PDF 228 KB] (522)
830 Li Zhong-Hui, Yu Tong-Jun, Yang Zhi-Jian, Feng Yu-Chun, Zhang Guo-Yi, Guo Bao-Ping, Niu Han-Ben
  Effect of annealing on photoluminescence and microstructures of InGaN/GaN multi-quantum well with Mg-doped p-type GaN
    Chin. Phys. B   2005 Vol.14 (4): 830-833 [Abstract] (756) [HTML 0 KB] [PDF 1454 KB] (659)
68106 Wu Jie-Jun, Wang Kun, Yu Tong-Jun, Zhang Guo-Yi
  GaN substrate and GaN homo-epitaxy for LEDs: Progress and challenges
    Chin. Phys. B   2015 Vol.24 (6): 68106-068106 [Abstract] (500) [HTML 1 KB] [PDF 960 KB] (747)
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