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CN 11-5639/O4
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Other articles related with "78.60.Fi":
47303 Jiao-Xin Guo, Jie Ding, Chun-Lan Mo, Chang-Da Zheng, Shuan Pan, Feng-Yi Jiang
  Effect of AlGaN interlayer on luminous efficiency and reliability of GaN-based green LEDs on silicon substrate
    Chin. Phys. B   2020 Vol.29 (4): 47303-047303 [Abstract] (10) [HTML 1 KB] [PDF 1344 KB] (2)
47802 Jiang-Dong Gao, Jian-Li Zhang, Zhi-Jue Quan, Jun-Lin Liu, Feng-Yi Jiang
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48504 Kang Su, Jing Li, Chang Ge, Xing-Dong Lu, Zhi-Cong Li, Guo-Hong Wang, Jin-Min Li
  Stackable luminescent device integrating blue light emitting diode with red organic light emitting diode
    Chin. Phys. B   2020 Vol.29 (4): 48504-048504 [Abstract] (5) [HTML 1 KB] [PDF 1027 KB] (1)
34206 Ping Chen, De-Gang Zhao, De-Sheng Jiang, Jing Yang, Jian-Jun Zhu, Zong-Shun Liu, Wei Liu, Feng Liang, Shuang-Tao Liu, Yao Xing, Li-Qun Zhang
  Evaluation of polarization field in InGaN/GaN multiple quantum well structures by using electroluminescence spectra shift
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17301 Yi-Fu Wang, Mussaab I Niass, Fang Wang, Yu-Huai Liu
  Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer
    Chin. Phys. B   2020 Vol.29 (1): 17301-017301 [Abstract] (44) [HTML 1 KB] [PDF 723 KB] (34)
107801 Yanxu Chen, Dongliang Xu, Kaikai Xu, Ning Zhang, Siyang Liu, Jianming Zhao, Qian Luo, Lukas W. Snyman, Jacobus W. Swart
  Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
    Chin. Phys. B   2019 Vol.28 (10): 107801-107801 [Abstract] (199) [HTML 1 KB] [PDF 1215 KB] (111)
67305 Tian-Ran Zhang, Fang Fang, Xiao-Lan Wang, Jian-Li Zhang, Xiao-Ming Wu, Shuan Pan, Jun-Lin Liu, Feng-Yi Jiang
  Aging mechanism of GaN-based yellow LEDs with V-pits
    Chin. Phys. B   2019 Vol.28 (6): 67305-067305 [Abstract] (81) [HTML 1 KB] [PDF 1504 KB] (76)
107801 Zhi-Qi Kou, Yu Tang, Li-Ping Yang, Fei-Yu Yang, Wen-Jun Guo
  Improvement of electro-optic performances in white organic light emitting diodes with color stability by buffer layer and multiple dopants structure
    Chin. Phys. B   2018 Vol.27 (10): 107801-107801 [Abstract] (144) [HTML 1 KB] [PDF 498 KB] (86)
77301 Chaoyu Guo, Xiangzhi Meng, Qin Wang, Ying Jiang
  Image charge effect on the light emission of rutile TiO2(110) induced by a scanning tunneling microscope
    Chin. Phys. B   2018 Vol.27 (7): 77301-077301 [Abstract] (328) [HTML 1 KB] [PDF 1087 KB] (167)
47803 Bin Zhao, Wei Hu, Xian-Sheng Tang, Wen-Xue Huo, Li-Li Han, Ming-Long Zhao, Zi-Guang Ma, Wen-Xin Wang, Hai-Qiang Jia, Hong Chen
  Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate
    Chin. Phys. B   2018 Vol.27 (4): 47803-047803 [Abstract] (166) [HTML 1 KB] [PDF 655 KB] (205)
98507 Jian Gao, Qian-Qian Yu, Juan Zhang, Yang Liu, Ruo-Fei Jia, Jun Han, Xiao-Ming Wu, Yu-Lin Hua, Shou-Gen Yin
  Lowering the driving voltage and improving the luminance of blue fluorescent organic light-emitting devices by thermal annealing a hole injection layer of pentacene
    Chin. Phys. B   2017 Vol.26 (9): 98507-098507 [Abstract] (147) [HTML 1 KB] [PDF 1744 KB] (138)
87302 Yun-Ke Zhu, Jian Zhong, Shu-Ying Lei, Hui Chen, Shuang-Shuang Shao, Yu Lin
  High-efficiency organic light-emitting diodes based on ultrathin blue phosphorescent modification layer
    Chin. Phys. B   2017 Vol.26 (8): 87302-087302 [Abstract] (163) [HTML 1 KB] [PDF 849 KB] (133)
87311 Yangfeng Li, Yang Jiang, Junhui Die, Caiwei Wang, Shen Yan, Ziguang Ma, Haiyan Wu, Lu Wang, Haiqiang Jia, Wenxin Wang, Hong Chen
  Improvement of green InGaN-based LEDs efficiency using a novel quantum well structure
    Chin. Phys. B   2017 Vol.26 (8): 87311-087311 [Abstract] (334) [HTML 1 KB] [PDF 1381 KB] (258)
47302 Zijun Wang, Juan Zhao, Chang Zhou, Yige Qi, Junsheng Yu
  Enhancement of Förster energy transfer from thermally activated delayed fluorophores layer to ultrathin phosphor layer for high color stability in non-doped hybrid white organic light-emitting devices
    Chin. Phys. B   2017 Vol.26 (4): 47302-047302 [Abstract] (223) [HTML 1 KB] [PDF 867 KB] (237)
47703 Ying-Jie Lu, Zhi-Feng Shi, Chong-Xin Shan, De-Zhen Shen
  ZnO-based deep-ultraviolet light-emitting devices
    Chin. Phys. B   2017 Vol.26 (4): 47703-047703 [Abstract] (210) [HTML 1 KB] [PDF 4943 KB] (453)
36801 Yuanfang Yu, Feng Miao, Jun He, Zhenhua Ni
  Photodetecting and light-emitting devices based on two-dimensional materials
    Chin. Phys. B   2017 Vol.26 (3): 36801-036801 [Abstract] (285) [HTML 1 KB] [PDF 7301 KB] (737)
28502 Min Guo, Zhi-You Guo, Jing Huang, Yang Liu, Shun-Yu Yao
  Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
    Chin. Phys. B   2017 Vol.26 (2): 28502-028502 [Abstract] (209) [HTML 1 KB] [PDF 385 KB] (227)
17805 Xiang Li(李翔), De-Gang Zhao(赵德刚), De-Sheng Jiang(江德生), Jing Yang(杨静), Ping Chen(陈平), Zong-Shun Liu(刘宗顺), Jian-Jun Zhu(朱建军), Wei Liu(刘炜), Xiao-Guang He(何晓光), Xiao-Jing Li(李晓静), Feng Liang(梁锋), Jian-Ping Liu(刘建平), Li-Qun Zhang(张立群), Hui Yang(杨辉), Yuan-Tao Zhang(张源涛), Guo-Tong Du(杜国同), Heng Long(龙衡), Mo Li(李沫)
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126104 Chao He, Zhi Liu, Bu-Wen Cheng
  Room temperature direct-bandgap electroluminescence from a horizontal Ge ridge waveguide on Si
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108505 Chang-Ting Wei, Jin-Yong Zhuang, Ya-Li Chen, Dong-Yu Zhang, Wen-Ming Su, Zheng Cui
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28501 Cheng Zhang, Hui-Qing Sun, Xu-Na Li, Hao Sun, Xuan-Cong Fan, Zhu-Ding Zhang, Zhi-You Guo
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127801 Liu Wei, Zhao De-Gang, Jiang De-Sheng, Chen Ping, Liu Zong-Shun, Zhu Jian-Jun, Li Xiang, Liang Feng, Liu Jian-Ping, Yang Hui
  Variation of efficiency droop with quantum well thickness in InGaN/GaN green light-emitting diode
    Chin. Phys. B   2015 Vol.24 (12): 127801-127801 [Abstract] (322) [HTML 1 KB] [PDF 1354 KB] (382)
117801 Du Yong, Shao Chong-Yun, Dong Yong-Jun, Yang Qiu-Hong, Hua Wei
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    Chin. Phys. B   2015 Vol.24 (11): 117801-117801 [Abstract] (205) [HTML 1 KB] [PDF 726 KB] (521)
118102 Chen Long, Payne Justin, Strate Jan, Li Cheng, Zhang Jian-Ming, Yu Wen-Jie, Di Zeng-Feng, Wang Xi
  Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates
    Chin. Phys. B   2015 Vol.24 (11): 118102-118102 [Abstract] (265) [HTML 1 KB] [PDF 1912 KB] (393)
107304 Wang Xiao-Bo, Li Yong, Yan Ling-Ling, Li Xin-Jian
  Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
    Chin. Phys. B   2015 Vol.24 (10): 107304-107304 [Abstract] (368) [HTML 1 KB] [PDF 421 KB] (356)
97202 Ma Li, Shen Guang-Di, Gao Zhi-Yuan, Xu Chen
  Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers
    Chin. Phys. B   2015 Vol.24 (9): 97202-097202 [Abstract] (349) [HTML 1 KB] [PDF 414 KB] (288)
67303 Wang Lai, Yang Di, Hao Zhi-Biao, Luo Yi
  Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 67303-067303 [Abstract] (269) [HTML 1 KB] [PDF 1149 KB] (654)
57802 Miao Yan-Qin, Gao Zhi-Xiang, Zhang Ai-Qin, Li Yuan-Hao, Wang Hua, Jia Hu-Sheng, Liu Xu-Guang, Tsuboi Taiju
  High color rendering index white organic light-emitting diode using levofloxacin as blue emitter
    Chin. Phys. B   2015 Vol.24 (5): 57802-057802 [Abstract] (246) [HTML 1 KB] [PDF 496 KB] (265)
37802 Xin Li-Wen, Wu Xiao-Ming, Hua Yu-Lin, Xiao Zhi-Hui, Wang Li, Zhang Xin, Yin Shou-Gen
  Improvement of electron injection of organic light-emitting devices by inserting a thin aluminum layer into cesium carbonate injection layer
    Chin. Phys. B   2015 Vol.24 (3): 37802-037802 [Abstract] (203) [HTML 0 KB] [PDF 256 KB] (307)
116103 He Chao, Liu Zhi, Zhang Xu, Huang Wen-Qi, Xue Chun-Lai, Cheng Bu-Wen
  Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature
    Chin. Phys. B   2014 Vol.23 (11): 116103-116103 [Abstract] (236) [HTML 1 KB] [PDF 719 KB] (259)
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