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CN 11-5639/O4
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Other articles related with "73.40.Ns":
117303 Hao Yuan, Qing-Wen Song, Chao Han, Xiao-Yan Tang, Xiao-Ning He, Yu-Ming Zhang, Yi-Men Zhang
  Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure
    Chin. Phys. B   2019 Vol.28 (11): 117303-117303 [Abstract] (88) [HTML 1 KB] [PDF 594 KB] (65)
97305 Sheng-Xu Dong, Yun Bai, Yi-Dan Tang, Hong Chen, Xiao-Li Tian, Cheng-Yue Yang, Xin-Yu Liu
  Analysis of the inhomogeneous barrier and phase composition of W/4H-SiC Schottky contacts formed at different annealing temperatures
    Chin. Phys. B   2018 Vol.27 (9): 97305-097305 [Abstract] (202) [HTML 1 KB] [PDF 938 KB] (175)
118101 Shu-Zhen Yu, Yan Song, Jian-Rong Dong, Yu-Run Sun, Yong-Ming Zhao, Yang He
  Low specific contact resistivity to graphene achieved by AuGe/Ni/Au and annealing process
    Chin. Phys. B   2016 Vol.25 (11): 118101-118101 [Abstract] (160) [HTML 0 KB] [PDF 438 KB] (343)
126801 Zhou Tian-Yu, Liu Xue-Chao, Huang Wei, Zhuo Shi-Yi, Zheng Yan-Qing, Shi Er-Wei
  Electrical properties and microstructural characterization of Ni/Ta contacts to n-type 6H-SiC
    Chin. Phys. B   2015 Vol.24 (12): 126801-126801 [Abstract] (150) [HTML 1 KB] [PDF 2134 KB] (339)
117307 Zhang Sheng, Wei Ke, Yu Le, Liu Guo-Guo, Huang Sen, Wang Xin-Hua, Pang Lei, Zheng Ying-Kui, Li Yan-Kui, Ma Xiao-Hua, Sun Bing, Liu Xin-Yu
  AlGaN/GaN high electron mobility transistorwith Al2O3+BCB passivation
    Chin. Phys. B   2015 Vol.24 (11): 117307-117307 [Abstract] (192) [HTML 1 KB] [PDF 1534 KB] (466)
117308 Dai Xian-Qi, Wang Xiao-Long, Li Wei, Wang Tian-Xing
  Electronic properties of the SnSe-metal contacts: First-principles study
    Chin. Phys. B   2015 Vol.24 (11): 117308-117308 [Abstract] (291) [HTML 1 KB] [PDF 1220 KB] (552)
87308 Zhong Hong-Xia, Quhe Ru-Ge, Wang Yang-Yang, Shi Jun-Jie, Lü Jin
  Silicene on substrates: A theoretical perspective
    Chin. Phys. B   2015 Vol.24 (8): 87308-087308 [Abstract] (294) [HTML 1 KB] [PDF 7810 KB] (461)
127302 Han Lin-Chao, Shen Hua-Jun, Liu Ke-An, Wang Yi-Yu, Tang Yi-Dan, Bai Yun, Xu Heng-Yu, Wu Yu-Dong, Liu Xin-Yu
  Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts
    Chin. Phys. B   2014 Vol.23 (12): 127302-127302 [Abstract] (135) [HTML 1 KB] [PDF 461 KB] (418)
107306 Deng Ning, Pang Hua, Wu Wei
  Effects of different dopants on switching behavior of HfO2-based resistive random access memory
    Chin. Phys. B   2014 Vol.23 (10): 107306-107306 [Abstract] (117) [HTML 1 KB] [PDF 953 KB] (1994)
66803 Dai Chong-Chong, Liu Xue-Chao, Zhou Tian-Yu, Zhuo Shi-Yi, Shi Biao, Shi Er-Wei
  Effects of annealing temperature on the electrical property and microstructure of aluminum contact on n-type 3C-SiC
    Chin. Phys. B   2014 Vol.23 (6): 66803-066803 [Abstract] (145) [HTML 1 KB] [PDF 717 KB] (289)
107306 Ma Fei, Liu Hong-Xia, Fan Ji-Bin, Wang Shu-Long
  A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs
    Chin. Phys. B   2012 Vol.21 (10): 107306-107306 [Abstract] (624) [HTML 1 KB] [PDF 197 KB] (910)
37304 Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan,Wang Yue-Hu,Chen Wen-Hao
  Temperature-dependent characteristics of 4H–SiC junction barrier Schottky diodes
    Chin. Phys. B   2012 Vol.21 (3): 37304-037304 [Abstract] (954) [HTML 1 KB] [PDF 301 KB] (1804)
117301 Chen Feng-Ping, Zhang Yu-Ming, Zhang Yi-Men, Tang Xiao-Yan, Wang Yue-Hu, Chen Wen-Hao
  Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode
    Chin. Phys. B   2011 Vol.20 (11): 117301-117301 [Abstract] (1360) [HTML 0 KB] [PDF 413 KB] (2843)
27202 Zhang Guang-Chen, Feng Shi-Wei, Zhou Zhou, Li Jing-Wan, Guo Chun-Sheng
  Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
    Chin. Phys. B   2011 Vol.20 (2): 27202-027202 [Abstract] (1040) [HTML 0 KB] [PDF 1563 KB] (1425)
16102 He Jin, Liu Feng, Zhou Xing-Ye, Zhang Jian, Zhang Li-Ning
  A continuous analytic channel potential solution to doped symmetric double-gate MOSFETs from the accumulation to the strong-inversion region
    Chin. Phys. B   2011 Vol.20 (1): 16102-016102 [Abstract] (1149) [HTML 0 KB] [PDF 589 KB] (1308)
117201 Xu Ning, Wang Bao-Lin, Sun Hou-Qian, Kong Fan-Jie
  Disorder-induced enhancement of conductance in doped nanowires
    Chin. Phys. B   2010 Vol.19 (11): 117201-117202 [Abstract] (980) [HTML 0 KB] [PDF 839 KB] (559)
107207 M. A. Yeganehx, Sh. Rahmatallahpur, A. Nozad, R. K. Mamedov
  Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes
    Chin. Phys. B   2010 Vol.19 (10): 107207-107207 [Abstract] (1261) [HTML 0 KB] [PDF 3060 KB] (1435)
17204 Wang Shou-Guo, Zhang Yan, Zhang Yi-Men, Zhang Yu-Ming
  Ohmic contacts of 4H-SiC on ion-implantation layers
    Chin. Phys. B   2010 Vol.19 (1): 17204-017204 [Abstract] (1058) [HTML 0 KB] [PDF 322 KB] (754)
17307 Wang Liang-Ji, Zhang Shu-Ming, Zhu Ji-Hong, ZhuJian-Jun, Zhao De-Gang, Liu Zong-Shun, Jiang De-Sheng, WangYu-Tian, Yang Hui
  Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
    Chin. Phys. B   2010 Vol.19 (1): 17307-017307 [Abstract] (1004) [HTML 0 KB] [PDF 689 KB] (1127)
4470 Wang Yang-Yuan, Guo Hui, Wang Yue-Hu, Zhang Yu-Ming, Qiao Da-Yong, Zhang Yi-Men
  Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation
    Chin. Phys. B   2009 Vol.18 (10): 4470-4473 [Abstract] (1132) [HTML 0 KB] [PDF 2869 KB] (690)
3490 Zhang Lin, Zhang Yi-Men, Zhang Yu-Ming, Han Chao, Ma Yong-Ji
  High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact
    Chin. Phys. B   2009 Vol.18 (8): 3490-3494 [Abstract] (1192) [HTML 0 KB] [PDF 1316 KB] (931)
2707 Long Yun-Ze, Yin Zhi-Hua, Hui Wen, Chen Zhao-Jia, Wan Mei-Xiang
  Rectifying effect of heterojunctions between metals and doped conducting polymer nanostructure pellets
    Chin. Phys. B   2008 Vol.17 (7): 2707-2711 [Abstract] (984) [HTML 0 KB] [PDF 1696 KB] (867)
2696 Yang Ling, Ma Xiao-Hua, Feng Qian, Hao Yue
  Reliability analysis of GaN-based light emitting diodes for solid state illumination
    Chin. Phys. B   2008 Vol.17 (7): 2696-2700 [Abstract] (1055) [HTML 0 KB] [PDF 3423 KB] (794)
2204 Chen Peng, Takamura K
  Magnetic and electrical properties of zincblende CrAs
    Chin. Phys. B   2008 Vol.17 (6): 2204-2207 [Abstract] (1003) [HTML 0 KB] [PDF 996 KB] (533)
3498 Zhang Jian-Ming, Zou De-Shu, Xu Chen, Guo Wei-Ling, Zhu Yan-Xu, Liang Ting, Da Xiao-Li, Li Jian-Jun, Shen Guang-Di
  AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact
    Chin. Phys. B   2007 Vol.16 (11): 3498-3501 [Abstract] (1221) [HTML 0 KB] [PDF 1082 KB] (1193)
2151 Zhang Tong-Yi, Zhao Wei, Zhu Hai-Yan, Zhu Shao-Lan, Liu Xue-Ming
  A full numerical calculation of the Franz--Keldysh effect on magnetoexcitons in a bulk semiconductor
    Chin. Phys. B   2006 Vol.15 (9): 2151-2157 [Abstract] (877) [HTML 0 KB] [PDF 196 KB] (520)
460 Xuan Kai, Yan Xiao-Hong, Ding Shu-Long, Yang Yu-Rong, Xiao Yang, Guo Zhao-Hui
  The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance
    Chin. Phys. B   2006 Vol.15 (2): 460-465 [Abstract] (705) [HTML 0 KB] [PDF 0 KB] (157)
1639 Zhu Shi-Yang, Ru Guo-Ping, Zhou Jia, Huang Yi-Ping
  I-V-T studies on Ni-silicide/n-Si(100) contacts formed by Ti-Ni-Si solid state reaction
    Chin. Phys. B   2005 Vol.14 (8): 1639-1643 [Abstract] (778) [HTML 0 KB] [PDF 289 KB] (381)
1114 Ma Li, Gao Yong, Wang Cai-Lin
  A novel type of ultra fast and ultra soft recovery SiGe/Si heterojunction power diode with an ideal ohmic contact
    Chin. Phys. B   2004 Vol.13 (7): 1114-1119 [Abstract] (713) [HTML 0 KB] [PDF 296 KB] (410)
1110 Tang Xiao-Yan, Zhang Yi-Men, Zhang Yu-Ming, Gao Jin-Xia
  Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSFETs
    Chin. Phys. B   2004 Vol.13 (7): 1110-1113 [Abstract] (725) [HTML 0 KB] [PDF 190 KB] (347)
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