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CN 11-5639/O4
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Other articles related with "73.40.Kp":
97202 Jun Chen, Jiabing Lv
  Spectral response modeling and analysis of p-n-p In0.53Ga0.47As/InP HPTs
    Chin. Phys. B   2016 Vol.25 (9): 97202-097202 [Abstract] (267) [HTML 1 KB] [PDF 233 KB] (255)
97307 Wenqi Wang(王文奇), Lu Wang(王禄), Yang Jiang(江洋), Ziguang Ma(马紫光), Ling Sun(孙令), Jie Liu(刘洁), Qingling Sun(孙庆灵), Bin Zhao(赵斌), Wenxin Wang(王文新), Wuming Liu(刘伍明), Haiqiang Jia(贾海强), Hong Chen(陈弘)
  Carrier transport in III-V quantum-dot structures for solar cells or photodetectors
    Chin. Phys. B   2016 Vol.25 (9): 97307-097307 [Abstract] (330) [HTML 1 KB] [PDF 593 KB] (424)
87201 Xiao-Chuan Deng, Xi-Xi Chen, Cheng-Zhan Li, Hua-Jun Shen, Jin-Ping Zhang
  Numerical and experimental study of the mesa configuration in high-voltage 4H-SiC PiN rectifiers
    Chin. Phys. B   2016 Vol.25 (8): 87201-087201 [Abstract] (264) [HTML 1 KB] [PDF 1372 KB] (401)
87304 Xiao-Ling Duan, Jin-Cheng Zhang, Ming Xiao, Yi Zhao, Jing Ning, Yue Hao
  Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures
    Chin. Phys. B   2016 Vol.25 (8): 87304-087304 [Abstract] (244) [HTML 1 KB] [PDF 865 KB] (373)
87801 Ya-Li Liu, Peng Jin, Gui-Peng Liu, Wei-Ying Wang, Zhi-Qiang Qi, Chang-Qing Chen, Zhan-Guo Wang
  Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells
    Chin. Phys. B   2016 Vol.25 (8): 87801-087801 [Abstract] (164) [HTML 1 KB] [PDF 300 KB] (331)
88505 Ping Qin, Wei-Dong Song, Wen-Xiao Hu, Yuan-Wen Zhang, Chong-Zhen Zhang, Ru-Peng Wang, Liang-Liang Zhao, Chao Xia, Song-Yang Yuan, Yi-an Yin, Shu-Ti Li, Shi-Chen Su
  Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer
    Chin. Phys. B   2016 Vol.25 (8): 88505-088505 [Abstract] (276) [HTML 1 KB] [PDF 315 KB] (352)
67205 Jiao Huang(黄郊), Li-Wei Guo(郭丽伟), Wei Lu(芦伟), Yong-Hui Zhang(张永晖), Zhe Shi(史哲), Yu-Ping Jia(贾玉萍), Zhi-Lin Li(李治林), Jun-Wei Yang(杨军伟), Hong-Xiang Chen(陈洪祥), Zeng-Xia Mei(梅增霞), Xiao-Long Chen(陈小龙)
  A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide
    Chin. Phys. B   2016 Vol.25 (6): 67205-067205 [Abstract] (457) [HTML 1 KB] [PDF 510 KB] (425)
67304 Dakhlaoui H, Almansour S
  Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes
    Chin. Phys. B   2016 Vol.25 (6): 67304-067304 [Abstract] (274) [HTML 1 KB] [PDF 305 KB] (244)
67305 Qing Zhu, Xiao-Hua Ma, Wei-Wei Chen, Bin Hou, Jie-Jie Zhu, Meng Zhang, Li-Xiang Chen, Yan-Rong Cao, Yue Hao
  Influence of surface states on deep level transient spectroscopy in AlGaN/GaN heterostructure
    Chin. Phys. B   2016 Vol.25 (6): 67305-067305 [Abstract] (217) [HTML 1 KB] [PDF 508 KB] (310)
48505 Gang-Cheng Jiao, Zheng-Tang Liu, Hui Guo, Yi-Jun Zhang
  Comparison of blue-green response between transmission-mode GaAsP-and GaAs-based photocathodes grown by molecular beam epitaxy
    Chin. Phys. B   2016 Vol.25 (4): 48505-048505 [Abstract] (179) [HTML 1 KB] [PDF 1005 KB] (390)
27303 Jun Luo, Sheng-Lei Zhao, Min-Han Mi, Wei-Wei Chen, Bin Hou, Jin-Cheng Zhang, Xiao-Hua Ma, Yue Hao
  Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor
    Chin. Phys. B   2016 Vol.25 (2): 27303-027303 [Abstract] (418) [HTML 1 KB] [PDF 496 KB] (881)
17303 Wei Mao, Wei-Bo She, Cui Yang, Jin-Feng Zhang, Xue-Feng Zheng, Chong Wang, Yue Hao
  Reverse blocking characteristics and mechanisms in Schottky-drainAlGaN/GaN HEMT with a drain field plate and floating field plates
    Chin. Phys. B   2016 Vol.25 (1): 17303-017303 [Abstract] (278) [HTML 1 KB] [PDF 1923 KB] (573)
127304 Liu Chao-Wen, Xu Jing-Ping, Liu Lu, Lu Han-Han
  High-k gate dielectric GaAs MOS device with LaON as interlayer and NH3-plasma surface pretreatment
    Chin. Phys. B   2015 Vol.24 (12): 127304-127304 [Abstract] (295) [HTML 1 KB] [PDF 343 KB] (310)
117305 Luo Jun, Zhao Sheng-Lei, Mi Min-Han, Hou Bin, Yang Xiao-Lei, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors
    Chin. Phys. B   2015 Vol.24 (11): 117305-117305 [Abstract] (357) [HTML 1 KB] [PDF 339 KB] (540)
107304 Wang Xiao-Bo, Li Yong, Yan Ling-Ling, Li Xin-Jian
  Rectification and electroluminescence of nanostructured GaN/Si heterojunction based on silicon nanoporous pillar array
    Chin. Phys. B   2015 Vol.24 (10): 107304-107304 [Abstract] (388) [HTML 1 KB] [PDF 421 KB] (394)
107305 Zheng Jia-Xin, Ma Xiao-Hua, Lu Yang, Zhao Bo-Chao, Zhang Hong-He, Zhang Meng, Cao Meng-Yi, Hao Yue
  A C-band 55% PAE high gain two-stage power amplifier based on AlGaN/GaN HEMT
    Chin. Phys. B   2015 Vol.24 (10): 107305-107305 [Abstract] (413) [HTML 1 KB] [PDF 897 KB] (433)
97303 Zhong Jian, Yao Yao, Zheng Yue, Yang Fan, Ni Yi-Qiang, He Zhi-Yuan, Shen Zhen, Zhou Gui-Lin, Zhou De-Qiu, Wu Zhi-Sheng, Zhang Bai-Jun, Liu Yang
  Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode
    Chin. Phys. B   2015 Vol.24 (9): 97303-097303 [Abstract] (409) [HTML 1 KB] [PDF 601 KB] (534)
77801 Yu Lei, Zhang Yuan-Wen, Li Kai, Pi Hui, Diao Jia-Sheng, Wang Xing-Fu, Hu Wen-Xiao, Zhang Chong-Zhen, Song Wei-Dong, Shen Yue, Li Shu-Ti
  Theoretical analysis of semi/non-polar InGaN/GaN light-emitting diodes grown on silicon substrates
    Chin. Phys. B   2015 Vol.24 (7): 77801-077801 [Abstract] (187) [HTML 1 KB] [PDF 512 KB] (219)
67303 Wang Lai, Yang Di, Hao Zhi-Biao, Luo Yi
  Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 67303-067303 [Abstract] (294) [HTML 1 KB] [PDF 1149 KB] (717)
67804 Liu Jun-Lin, Zhang Jian-Li, Wang Guang-Xu, Mo Chun-Lan, Xu Long-Quan, Ding Jie, Quan Zhi-Jue, Wang Xiao-Lan, Pan Shuan, Zheng Chang-Da, Wu Xiao-Ming, Fang Wen-Qing, Jiang Feng-Yi
  Status of GaN-based green light-emitting diodes
    Chin. Phys. B   2015 Vol.24 (6): 67804-067804 [Abstract] (298) [HTML 1 KB] [PDF 1200 KB] (2095)
56103 Lei Zhi-Feng, Guo Hong-Xia, Zeng Chang, Chen Hui, Wang Yuan-Sheng, Zhang Zhan-Gang
  Influence of heavy ion irradiation on DC and gate-lag performance of AlGaN/GaN HEMTs
    Chin. Phys. B   2015 Vol.24 (5): 56103-056103 [Abstract] (316) [HTML 1 KB] [PDF 1352 KB] (453)
27302 Zheng Xue-Feng, Fan Shuang, Chen Yong-He, Kang Di, Zhang Jian-Kun, Wang Chong, Mo Jiang-Hui, Li Liang, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue
  Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation
    Chin. Phys. B   2015 Vol.24 (2): 27302-027302 [Abstract] (351) [HTML 0 KB] [PDF 390 KB] (554)
27303 Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment
    Chin. Phys. B   2015 Vol.24 (2): 27303-027303 [Abstract] (201) [HTML 0 KB] [PDF 344 KB] (439)
17302 Zhao Yi, Zhang Jin-Cheng, Xue Jun-Shuai, Zhou Xiao-Wei, Xu Sheng-Rui, Hao Yue
  Influence of compressive strain on the incorporation of indium in InGaN and InAlN ternary alloys
    Chin. Phys. B   2015 Vol.24 (1): 17302-017302 [Abstract] (226) [HTML 0 KB] [PDF 456 KB] (572)
117803 Wang Wei-Ying, Liu Gui-Peng, Jin Peng, Mao De-Feng, Li Wei, Wang Zhan-Guo, Tian Wu, Chen Chang-Qing
  Effects of interface roughness on photoluminescence full width at half maximum in GaN/AlGaN quantum wells
    Chin. Phys. B   2014 Vol.23 (11): 117803-117803 [Abstract] (157) [HTML 1 KB] [PDF 272 KB] (440)
107101 Li Shi-Bin, Yu Hong-Ping, Zhang Ting, Chen Zhi, Wu Zhi-Ming
  Low-resistance Ohmic contact on polarization-dopedAlGaN/GaN heterojunction
    Chin. Phys. B   2014 Vol.23 (10): 107101-107101 [Abstract] (144) [HTML 1 KB] [PDF 392 KB] (751)
107302 Saeideh Ramezani Sani
  Analysis of optoelectronic properties of TiO2 nanowiers/Si heterojunction arrays
    Chin. Phys. B   2014 Vol.23 (10): 107302-107302 [Abstract] (143) [HTML 1 KB] [PDF 242 KB] (417)
107303 Zhao Sheng-Lei, Mi Min-Han, Hou Bin, Luo Jun, Wang Yi, Dai Yang, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain
    Chin. Phys. B   2014 Vol.23 (10): 107303-107303 [Abstract] (162) [HTML 1 KB] [PDF 1455 KB] (822)
97305 Zhao Sheng-Lei, Wang Yuan, Yang Xiao-Lei, Lin Zhi-Yu, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, Hao Yue
  Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors
    Chin. Phys. B   2014 Vol.23 (9): 97305-097305 [Abstract] (174) [HTML 1 KB] [PDF 1027 KB] (842)
97308 Jiang Chao, Lu Hai, Chen Dun-Jun, Ren Fang-Fang, Zhang Rong, Zheng You-Dou
  Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate
    Chin. Phys. B   2014 Vol.23 (9): 97308-097308 [Abstract] (244) [HTML 1 KB] [PDF 1081 KB] (713)
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