Chin. Phys. B
Citation Search Quick Search

ISSN 1674-1056 (Print)
CN 11-5639/O4
About
   » About CPB
   » Editorial Board
   » SCI IF
   » Staff
   » Contact
Browse CPB
   » In Press
   » Current Issue
   » Earlier Issues
   » View by Fields
   » Top Downloaded
   » Sci Top Cited
Authors
   » Submit an Article
   » Manuscript Tracking
   » Call for Papers
   » Scope
   » Instruction for Authors
   » Copyright Agreement
   » Templates
   » Author FAQs
   » PACS
Referees
   » Review Policy
   » Referee Login
   » Referee FAQs
   » Editor in Chief Login
   » Editor Login
   » Office Login
Links
   »
Other articles related with "72.80.Ey":
67201 Ji Dong, Liu Bing, Lü Yan-Wu, Zou Miao, Fan Bo-Ling
  Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors
    Chin. Phys. B   2012 Vol.21 (6): 67201-067201 [Abstract] (853) [HTML 1 KB] [PDF 138 KB] (701)
57201 Duan Bao-Xing,Yang Yin-Tang
  Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer
    Chin. Phys. B   2012 Vol.21 (5): 57201-057201 [Abstract] (1020) [HTML 1 KB] [PDF 562 KB] (1310)
47202 Deng Jin-Xiang,Qin Yang,Kong Le,Yang Xue-Liang,Li Ting,Zhao Wei-Ping,Yang Ping
  The electrical properties of sulfur-implanted cubic boron nitride thin films
    Chin. Phys. B   2012 Vol.21 (4): 47202-047202 [Abstract] (784) [HTML 1 KB] [PDF 106 KB] (746)
97203 Mao Wei, Yang Cui, Hao Yue, Ma Xiao-Hua, Wang Chong, Zhang Jin-Cheng, Liu Hong-Xia, Bi Zhi-Wei, Xu Sheng-Rui, Yang Lin-An, Yang Ling, Zhang Kai, Zhang Nai-Qian, Pei Yi
  The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT
    Chin. Phys. B   2011 Vol.20 (9): 97203-097203 [Abstract] (1021) [HTML 0 KB] [PDF 303 KB] (951)
97701 Liu Zi-Yang, Zhang Jin-Cheng, Duan Huan-Tao, Xue Jun-Shuai, Lin Zhi-Yu, Ma Jun-Cai, Xue Xiao-Yong, Hao Yue
  Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures
    Chin. Phys. B   2011 Vol.20 (9): 97701-097701 [Abstract] (1072) [HTML 0 KB] [PDF 222 KB] (2461)
87203 Chen Yi-Xin, Shen Guang-Di, Guo Wei-Ling, Gao Zhi-Yuan
  AlGaInP–Si glue bonded high performance light emitting diodes
    Chin. Phys. B   2011 Vol.20 (8): 87203-087203 [Abstract] (988) [HTML 0 KB] [PDF 726 KB] (1217)
87902 Zhang Jun-Ju, Chang Ben-Kang, Fu Xiao-Qian, Du Yu-Jie, Li Biao, Zou Ji-Jun
  Influence of cesium on the stability of a GaAs photocathode
    Chin. Phys. B   2011 Vol.20 (8): 87902-087902 [Abstract] (1092) [HTML 0 KB] [PDF 206 KB] (973)
57201 Zhang An, Zhao Xiao-Ru, Duan Li-Bing, Liu Jin-Ming, Zhao Jian-Lin
  Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position
    Chin. Phys. B   2011 Vol.20 (5): 57201-057201 [Abstract] (984) [HTML 0 KB] [PDF 1041 KB] (1378)
47104 Liu Rui-Bin, Zou Bing-Suo
  Lasing behaviour from the condensation of polaronic excitons in a ZnO nanowire
    Chin. Phys. B   2011 Vol.20 (4): 47104-047104 [Abstract] (957) [HTML 0 KB] [PDF 3458 KB] (1059)
37103 Li Bing, Feng Liang-Huan, Wang Zhao, Zheng Xu, Zheng Jia-Gui, Cai Ya-Ping, Zhang Jing-Quan, Li Wei, Wu Li-Li, Lei Zhi, Zeng Guang-Gen
  Electronic properties and deep level transient spectroscopy of CdS/CdTe thin film solar cells
    Chin. Phys. B   2011 Vol.20 (3): 37103-037103 [Abstract] (933) [HTML 0 KB] [PDF 197 KB] (1347)
27202 Zhang Guang-Chen, Feng Shi-Wei, Zhou Zhou, Li Jing-Wan, Guo Chun-Sheng
  Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method
    Chin. Phys. B   2011 Vol.20 (2): 27202-027202 [Abstract] (1030) [HTML 0 KB] [PDF 1563 KB] (1362)
17203 Mao Wei, Yang Cui, Hao Yao, Zhang Jin-Cheng, Liu Hong-Xia, Bi Zhi-Wei, Xu Sheng-Rui, Xue Jun-Shuai, Ma Xiao-Hua, Wang Chong, Yang Lin-An, Zhang Jin-Feng, Kuang Xian-Wei
  Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT
    Chin. Phys. B   2011 Vol.20 (1): 17203-017203 [Abstract] (1431) [HTML 0 KB] [PDF 823 KB] (1573)
17204 Chen Yi-Xin, Shen Guang-Di, Guo Wei-Ling, Xu Chen, Li Jian-Jun
  Internal quantum efficiency drop induced by the heat generation inside of light emitting diodes (LEDs)
    Chin. Phys. B   2011 Vol.20 (1): 17204-017204 [Abstract] (1168) [HTML 0 KB] [PDF 651 KB] (1303)
17304 Deng Xiao-Chuan, Zhang Bo, Zhang You-Run, Wang Yi, Li Zhao-Ji
  Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
    Chin. Phys. B   2011 Vol.20 (1): 17304-017304 [Abstract] (1571) [HTML 0 KB] [PDF 602 KB] (890)
117102 Li Ping, Deng Sheng-Hua, Zhang Li, Yu Jiang-Ying, Liu Guo-Hong
  Comparisons of ZnO codoped by group IIIA elements (Al, Ga, In) and N: a first-principle study
    Chin. Phys. B   2010 Vol.19 (11): 117102-117104 [Abstract] (1362) [HTML 0 KB] [PDF 525 KB] (1062)
47101 Zuo Chun-Ying, Wen Jing, Bai Yue-Lei
  First-principles investigation of N-Ag co-doping effect on electronic properties in p-type ZnO
    Chin. Phys. B   2010 Vol.19 (4): 47101-047101 [Abstract] (1326) [HTML 0 KB] [PDF 383 KB] (1069)
5518 Shi Yu-Lei, Zhou Qing-Li, Zhao Dong-Mei, Zhang Cun-Lin
  Anomalous behaviours of terahertz reflected waves transmitted from GaAs induced by optical pumping
    Chin. Phys. B   2009 Vol.18 (12): 5518-5522 [Abstract] (1053) [HTML 0 KB] [PDF 410 KB] (565)
4515 Shi Yu-Lei, Zhou Qing-Li, Zhang Cun-Lin
  Transient surface photoconductivity of GaAs emitter studied by terahertz pump-emission spectroscopy
    Chin. Phys. B   2009 Vol.18 (10): 4515-4520 [Abstract] (1129) [HTML 0 KB] [PDF 259 KB] (577)
2981 Yan Yu-Zhen, Li Hui-Wu, Hu Liang-Bin
  Dissipationless spin-Hall current contribution in the extrinsic spin-Hall effect
    Chin. Phys. B   2009 Vol.18 (7): 2981-2987 [Abstract] (1047) [HTML 0 KB] [PDF 182 KB] (643)
2576 Peng Xian-De, Zhu Tao, Wang Fang-Wei, Huang Wan-Guo, Cheng Zhao-Hua
  The electrical transport behavior of Zn-treated Zn1-xMnxO bulks
    Chin. Phys. B   2009 Vol.18 (6): 2576-2581 [Abstract] (1040) [HTML 0 KB] [PDF 243 KB] (568)
1389 Long Yun-Ze, Wang Wen-Long, Bai Feng-Lian, Chen Zhao-Jia, Jin Ai-Zi, Gu Chang-Zhi
  Current--voltage characteristics of an individual helical CdS nanowire rope
    Chin. Phys. B   2008 Vol.17 (4): 1389-1393 [Abstract] (1210) [HTML 0 KB] [PDF 836 KB] (735)
2087 Hao Ai-Min, Gao Chun-Xiao, Li Ming, He Chun-Yuan, Huang Xiao-Wei, Zhang Dong-Mei, Yu Cui-Ling, Guan Rui, Zou Guang-Tian
  A study on the electrical property of HgSe under high pressure
    Chin. Phys. B   2007 Vol.16 (7): 2087-2090 [Abstract] (999) [HTML 0 KB] [PDF 144 KB] (476)
3019 Song Hong-Zhou, Zhang Ping, Duan Su-Qing, Zhao Xian-Geng
  Intrinsic Hall effect and separation of Rashba and Dresselhaus spin splittings in semiconductor quantum wells
    Chin. Phys. B   2006 Vol.15 (12): 3019-3025 [Abstract] (925) [HTML 0 KB] [PDF 284 KB] (626)
2402 Zhang Jin-Feng, Hao Yue
  GaN-based heterostructures: electric--static equilibrium and boundary conditions
    Chin. Phys. B   2006 Vol.15 (10): 2402-2406 [Abstract] (1127) [HTML 0 KB] [PDF 115 KB] (626)
1370 Du Peng, Zhang Xi-Qing, Sun Xue-Bai, Yao Zhi-Gang, Wang Yong-Sheng
  n-type ZnS used as electron transport material in organic light-emitting diodes
    Chin. Phys. B   2006 Vol.15 (6): 1370-1373 [Abstract] (1277) [HTML 0 KB] [PDF 190 KB] (1274)
773 Tang Wei-Hua, Fu Xiu-Li, Zhang Zhi-Yong, Li Ling-Hong
  Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires
    Chin. Phys. B   2006 Vol.15 (4): 773-777 [Abstract] (1419) [HTML 0 KB] [PDF 772 KB] (714)
636 Chang Yuan-Cheng, Zhang Yi-Men, Zhang Yu-Ming
  Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures
    Chin. Phys. B   2006 Vol.15 (3): 636-640 [Abstract] (1292) [HTML 0 KB] [PDF 261 KB] (511)
954 Zhang Xiao-Xin, Zeng Yi-Ping, Qiu Zhi-Jun, Wang Bao-Qiang, Zhu Zhan-Ping
  Observation of the current-voltage plateau-like structure of resonant tunnelling diode with prewells under different magnetic fields
    Chin. Phys. B   2004 Vol.13 (6): 954-957 [Abstract] (715) [HTML 0 KB] [PDF 164 KB] (337)
1334 Zhang Jin-Feng, Zhang Jin-Cheng, Hao Yue
  Temperature dependence of Hall electron density of GaN-based heterostructures
    Chin. Phys. B   2004 Vol.13 (8): 1334-1338 [Abstract] (708) [HTML 0 KB] [PDF 201 KB] (360)
840 Lei Xiao-lin, Liu Shi-yong
  TERAHERTZ SPECTRA EMITTED FROM HOT CARRIERS IN TWO-DIMENSIONAL SEMICONDUCTORS
    Chin. Phys. B   2001 Vol.10 (9): 840-843 [Abstract] (653) [HTML 0 KB] [PDF 225 KB] (570)
First page | Prev page | Next page | Last pagePage 2 of 3, 63 records
Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn