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CN 11-5639/O4
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Other articles related with "71.55.Eq":
47104 Min-Han Mi, Sheng Wu, Ling Yang, Yun-Long He, Bin Hou, Meng Zhang, Li-Xin Guo, Xiao-Hua Ma, Yue Hao
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57102 Ding Yu, Guiying Shen, Hui Xie, Jingming Liu, Jing Sun, Youwen Zhao
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97104 Yangfeng Li, Yang Jiang, Junhui Die, Caiwei Wang, Shen Yan, Haiyan Wu, Ziguang Ma, Lu Wang, Haiqiang Jia, Wenxin Wang, Hong Chen
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27103 Shu-Fang Ma, Yuan Qu, Shi-Liang Ban
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    Chin. Phys. B   2018 Vol.27 (2): 27103-027103 [Abstract] (125) [HTML 0 KB] [PDF 560 KB] (203)
17302 Wei-Min Zheng, Wei-Yan Cong, Su-Mei Li, Ai-Fang Wang, Bin Li, Hai-Bei Huang
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    Chin. Phys. B   2018 Vol.27 (1): 17302-017302 [Abstract] (175) [HTML 1 KB] [PDF 642 KB] (137)
127102 Peng Cui, Zhao-Jun Lin, Chen Fu, Yan Liu, Yuan-Jie Lv
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116801 Junjun Xue, Qing Cai, Baohua Zhang, Mei Ge, Dunjun Chen, Ting Zhi, Jiangwei Chen, Lianhui Wang, Rong Zhang, Youdou Zheng
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    Chin. Phys. B   2017 Vol.26 (11): 116801-116801 [Abstract] (187) [HTML 1 KB] [PDF 2165 KB] (153)
100201 Jiao-Li Gong, Jin-Song Liu, Man Zhang, Zheng Chu, Zhen-Gang Yang, Ke-Jia Wang, Jian-Quan Yao
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107102 Shuang-Tao Liu, De-Gang Zhao, Jing Yang, De-Sheng Jiang, Feng Liang, Ping Chen, Jian-Jun Zhu, Zong-Shun Liu, Xiang Li, Wei Liu, Yao Xing, Li-Qun Zhang
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    Chin. Phys. B   2017 Vol.26 (10): 107102-107102 [Abstract] (130) [HTML 1 KB] [PDF 368 KB] (186)
97104 Yan Liu, Zhao-Jun Lin, Yuan-Jie Lv, Peng Cui, Chen Fu, Ruilong Han, Yu Huo, Ming Yang
  Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors
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77101 Jing Yang, De-Gang Zhao, De-Sheng Jiang, Ping Chen, Zong-Shun Liu, Jian-Jun Zhu, Xiang Li, Wei Liu, Feng Liang, Li-Qun Zhang, Hui Yang, Wen-Jie Wang, Mo Li
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    Chin. Phys. B   2017 Vol.26 (7): 77101-077101 [Abstract] (168) [HTML 1 KB] [PDF 295 KB] (373)
27105 Yong Lei, Jing Su, Hong-Yan Wu, Cui-Hong Yang, Wei-Feng Rao
  On the reverse leakage current of Schottky contacts on free-standing GaN at high reverse biases
    Chin. Phys. B   2017 Vol.26 (2): 27105-027105 [Abstract] (199) [HTML 1 KB] [PDF 306 KB] (339)
117102 Qiang Li, Yufeng Li, Minyan Zhang, Wen Ding, Feng Yun
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100203 Jiao-Li Gong, Jin-Song Liu, Zheng Chu, Zhen-Gang Yang, Ke-Jia Wang, Jian-Quan Yao
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107106 Yuan-Gang Wang, Zhi-Hong Feng, Yuan-Jie Lv, Xin Tan, Shao-Bo Dun, Yu-Long Fang, Shu-Jun Cai
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47302 Wei-Min Zheng, Su-Mei Li, Wei-Yan Cong, Ai-Fang Wang, Bin Li, Hai-Bei Huang
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27102 Jing Yang, De-Gang Zhao, De-Sheng Jiang, Ping Chen, Zong-Shun Liu, Jian-Jun Zhu, Ling-Cong Le, Xiao-Jing Li, Xiao-Guang He, Li-Qun Zhang, Hui Yang
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117103 Yang Ming, Lin Zhao-Jun, Zhao Jing-Tao, Wang Yu-Tang, Li Zhi-Yuan, Lü Yuan-Jie, Feng Zhi-Hong
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    Chin. Phys. B   2015 Vol.24 (11): 117103-117103 [Abstract] (144) [HTML 1 KB] [PDF 257 KB] (242)
27101 Ma Xiao-Hua, Zhang Ya-Man, Wang Xin-Hua, Yuan Ting-Ting, Pang Lei, Chen Wei-Wei, Liu Xin-Yu
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127104 Zhao Jing-Tao, Lin Zhao-Jun, Luan Chong-Biao, Lü Yuan-Jie, Feng Zhi-Hong, Yang Ming
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77104 Ö L Ünsal, B Gönül, M Temiz
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67103 Li Liang, Yang Lin-An, Xue Jun-Shuai, Cao Rong-Tao, Xu Sheng-Rui, Zhang Jin-Cheng, Hao Yue
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47104 Deng Jin-Xiang, Chen Liang, Man Chao, Kong Le, Cui Min, Gao Xue-Fei
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    Chin. Phys. B   2014 Vol.23 (4): 47104-047104 [Abstract] (231) [HTML 1 KB] [PDF 479 KB] (379)
20701 Liu Yu-An, Zhuang Yi-Qi, Ma Xiao-Hua, Du Ming, Bao Jun-Lin, Li Cong
  A unified drain current 1/f noise model for GaN-based high electron mobility transistors
    Chin. Phys. B   2014 Vol.23 (2): 20701-020701 [Abstract] (217) [HTML 1 KB] [PDF 306 KB] (583)
27101 Lü Yuan-Jie, Feng Zhi-Hong, Lin Zhao-Jun, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Han Ting-Ting, Cai Shu-Jun
  Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
    Chin. Phys. B   2014 Vol.23 (2): 27101-027101 [Abstract] (175) [HTML 1 KB] [PDF 268 KB] (651)
27102 Lü Yuan-Jie, Feng Zhi-Hong, Gu Guo-Dong, Dun Shao-Bo, Yin Jia-Yun, Wang Yuan-Gang, Xu Peng, Han Ting-Ting, Song Xu-Bo, Cai Shu-Jun, Luan Chong-Biao, Lin Zhao-Jun
  Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
    Chin. Phys. B   2014 Vol.23 (2): 27102-027102 [Abstract] (181) [HTML 1 KB] [PDF 281 KB] (464)
117103 Ji Yan-Jun, Du Yu-Jie, Wang Mei-Shan
  Electronic structure and optical properties of Al and Mg co-doped GaN
    Chin. Phys. B   2013 Vol.22 (11): 117103-117103 [Abstract] (173) [HTML 1 KB] [PDF 529 KB] (623)
107302 Xue Bai-Qing, Wang Sheng-Kai, Han Le, Chang Hu-Dong, Sun Bing, Zhao Wei, Liu Hong-Gang
  High-mobility germanium p-MOSFETs by using HCl and (NH4)2S surface passivation
    Chin. Phys. B   2013 Vol.22 (10): 107302-107302 [Abstract] (172) [HTML 1 KB] [PDF 502 KB] (482)
108402 Yang Hao-Yu, Liu Ren-Jun, Wang Lian-Kai, Lü You, Li Tian-Tian, Li Guo-Xing, Zhang Yuan-Tao, Zhang Bao-Lin
  The design and numerical analysis of tandem thermophotovoltaic cells
    Chin. Phys. B   2013 Vol.22 (10): 108402-108402 [Abstract] (206) [HTML 1 KB] [PDF 316 KB] (658)
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