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CN 11-5639/O4
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Other articles related with "61.72.U-":
37304 Ya-Lin Li, Pei Gong, Xiao-Yong Fang
  Comparative study on transport properties of N-, P-, and As-doped SiC nanowires: Calculated based on first principles
    Chin. Phys. B   2020 Vol.29 (3): 37304-037304 [Abstract] (22) [HTML 1 KB] [PDF 1418 KB] (17)
106101 Yi-Dan Tang, Xin-Yu Liu, Zheng-Dong Zhou, Yun Bai, Cheng-Zhan Li
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    Chin. Phys. B   2019 Vol.28 (10): 106101-106101 [Abstract] (67) [HTML 1 KB] [PDF 909 KB] (62)
88102 Jian-Kang Wang, Shang-Sheng Li, Quan-Wei Jiang, Yan-Ling Song, Kun-Peng Yu, Fei Han, Tai-Chao Su, Mei-Hua Hu, Qiang Hu, Hong-An Ma, Xiao-Peng Jia, Hong-Yu Xiao
  Effect of FeS doping on large diamond synthesis in FeNi–C system
    Chin. Phys. B   2018 Vol.27 (8): 88102-088102 [Abstract] (150) [HTML 1 KB] [PDF 1599 KB] (145)
46101 Ting-Ting Wang, Gui-Wu Liu, Zhi-Kun Huang, Xiang-Zhao Zhang, Zi-Wei Xu, Guan-Jun Qiao
  Wettability of Si and Al-12Si alloy on Pd-implanted 6H-SiC
    Chin. Phys. B   2018 Vol.27 (4): 46101-046101 [Abstract] (172) [HTML 1 KB] [PDF 1028 KB] (117)
126101 Yan-Xia Yan, Meng Liu, Mei-Juan Hu, Hong-Zhi Zhu, Huan Wang
  Structural and size evolution of indium nanoparticles embedded in aluminum synthesized by ion implantation
    Chin. Phys. B   2017 Vol.26 (12): 126101-126101 [Abstract] (129) [HTML 0 KB] [PDF 385 KB] (144)
58102 He Zhang, Shangsheng Li, Taichao Su, Meihua Hu, Hongan Ma, Xiaopeng Jia, Yong Li
  Synthesis of N-type semiconductor diamonds with sulfur, boron co-doping in FeNiMnCo-C system at high pressure and high temperature
    Chin. Phys. B   2017 Vol.26 (5): 58102-058102 [Abstract] (155) [HTML 1 KB] [PDF 1171 KB] (228)
118104 He Zhang, Shangsheng Li, Taichao Su, Meihua Hu, Guanghui Li, Hongan Ma, Xiaopeng Jia
  Large single crystal diamond grown in FeNiMnCo-S-C system under high pressure and high temperature conditions
    Chin. Phys. B   2016 Vol.25 (11): 118104-118104 [Abstract] (161) [HTML 1 KB] [PDF 1725 KB] (350)
76104 Zhang Min, Lü Li, Wei Zhan-Tao, Yang Xin-Sheng, Zhao Yong
  Ferromagnetism on a paramagnetic host background in cobalt-doped Bi2Se3 topological insulator
    Chin. Phys. B   2014 Vol.23 (7): 76104-076104 [Abstract] (106) [HTML 1 KB] [PDF 644 KB] (611)
106105 Zhou Lin, Shang Yan-Xia, Wang Ze-Song, Zhang Rui, Zhang Zao-Di, Vasiliy O. Pelenovich, Fu De-Jun, Kang Tae Won
  Optical and magnetic properties of InFeP layers prepared by Fe+ implantation
    Chin. Phys. B   2013 Vol.22 (10): 106105-106105 [Abstract] (256) [HTML 1 KB] [PDF 1022 KB] (532)
87201 Zhang Jie, Yuan Chao, Wang Jun-Qiao, Liang Er-Jun, Chao Ming-Ju
  Oxygen ion conductivity of La0.8Sr0.2Ga0.83Mg0.17-xCoxO3-δ synthesized by laser rapid solidification
    Chin. Phys. B   2013 Vol.22 (8): 87201-087201 [Abstract] (271) [HTML 1 KB] [PDF 1623 KB] (254)
116104 Zheng Zhong-Shan, Liu Zhong-Li, Yu Fang, Li Ning
  Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide
    Chin. Phys. B   2012 Vol.21 (11): 116104-116104 [Abstract] (654) [HTML 1 KB] [PDF 628 KB] (480)
58101 Li Yong,Jia Xiao-Peng,Hu Mei-Hua,Liu Xiao-Bing,Yan Bing-Min,Zhou Zhen-Xiang,Zhang Zhuang-Fei,Ma Hong-An
  Growth and annealing study of hydrogen-doped single diamond crystals under high pressure and high temperature
    Chin. Phys. B   2012 Vol.21 (5): 58101-058101 [Abstract] (1039) [HTML 1 KB] [PDF 3185 KB] (779)
106104 Ma Zhi-Hua, Cao Quan, Zuo Yu-Hua, Zheng Jun, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming
  Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material
    Chin. Phys. B   2011 Vol.20 (10): 106104-106104 [Abstract] (760) [HTML 0 KB] [PDF 608 KB] (625)
66104 Liu Yao-Ping, Ying Min-Ju, Mei Zeng-Xia, Li Jun-Qiang, Du Xiao-Long, A. Yu. Kuznetsov
  Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films
    Chin. Phys. B   2011 Vol.20 (6): 66104-066104 [Abstract] (901) [HTML 0 KB] [PDF 414 KB] (687)
37902 Fu Xiao-Qian, Chang Ben-Kang, Wang Xiao-Hui, Li Biao, Du Yu-Jie, Zhang Jun-Ju
  Photoemission of graded-doping GaN photocathode
    Chin. Phys. B   2011 Vol.20 (3): 37902-037902 [Abstract] (938) [HTML 0 KB] [PDF 223 KB] (1126)
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