TY - Chin. Phys. B A1 - Si-Cheng Liu(刘思成), Xiao-Yan Tang(汤晓燕), Qing-Wen Song(宋庆文), Hao Yuan(袁昊), Yi-Meng Zhang(张艺蒙), Yi-Men Zhang(张义门), and Yu-Ming Zhang(张玉明) T1 - Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors operational at 400 °C Y1 - 2021-01-18 JF - Chinese Physics B JO - Chin. Phys. B SP - 28503 EP - 0 VL - 30 IS - 2 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/abc0df ER -