TY - Chin. Phys. B A1 - Ying Zan(昝颖), Yong-Liang Li(李永亮), Xiao-Hong Cheng(程晓红), Zhi-Qian Zhao(赵治乾), Hao-Yan Liu(刘昊炎), Zhen-Hua Hu(吴振华), An-Yan Du(都安彦), Wen-Wu Wang(王文武) T1 - High crystalline quality of SiGe fin fabrication with Si-rich composition area using replacement fin processing Y1 - 2020-08-05 JF - Chinese Physics B JO - Chin. Phys. B SP - 87303 EP - 087303 VL - 29 IS - 8 UR - https://cpb.iphy.ac.cn N1 - 10.1088/1674-1056/ab973e ER -